scholarly journals Tuning the electronic states and superconductivity in alkali fulleride films

2022 ◽  
Vol 32 (1) ◽  
Author(s):  
Ming-Qiang Ren ◽  
Shu-Ze Wang ◽  
Sha Han ◽  
Can-Li Song ◽  
Xu-Cun Ma ◽  
...  

AbstractThe successful preparation of superconducting alkali fulleride (AxC60, A = K, Rb, Cs) films using state-of-the-art molecular beam epitaxy overcomes the disadvantages of the air-sensitivity and phase separation in bulk AxC60, enabling for the first time a direct investigation of the superconductivity in alkali fullerides on the molecular scale. In this paper, we briefly review recent cryogenic scanning tunneling microscopy results of the structural, electronic, and superconducting properties of the fcc AxC60 films grown on graphitized SiC substrates. Robust s-wave superconductivity is revealed against the pseudogap, electronic correlation, non-magnetic impurities, and merohedral disorder. By controlling the alkali-metal species, film thickness, and electron doping, we systematically tune the C60x− orientational orderings and superconductivity in AxC60 films and then complete a unified phase diagram of superconducting gap size vs electronic correlation and doping. These investigations are conclusive and elucidated that the s-wave superconductivity retains in alkali fullerides despite of the electronic correlation and presence of pseudogap.

Author(s):  
M. G. Lagally

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.


1999 ◽  
Vol 4 (S1) ◽  
pp. 858-863
Author(s):  
Huajie Chen ◽  
A. R. Smith ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
J. E. Northrup

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.


1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 3810-3813 ◽  
Author(s):  
Reiko Kuroiwa ◽  
Hajime Asahi ◽  
Kakuya Iwata ◽  
Seong-Jin Kim ◽  
Joo-Hyong Noh ◽  
...  

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