Growth of multi-millimeter wide single crystal platelets of YBCO and variation of their properties under thermal annealing in oxygen

1988 ◽  
Vol 23 (8) ◽  
pp. 1119-1125 ◽  
Author(s):  
G. Balestrino ◽  
S. Barbanera ◽  
G. Castellano ◽  
V. Foglietti ◽  
M. Giammatteo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Annealing

Integration of NiSi SALICIDE for Deep Submicron CMOS Technologies

1998 ◽  
Vol 514 ◽  
Author(s):  
X. W. Lin ◽  
N. Ibrahim ◽  
L. Topete ◽  
D. Pramanik
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Thermal Budget ◽  
Si Substrates ◽  
Low Thermal Budget ◽  
Lower Resistivity

ABSTRACTA NiSi-based self-aligned silicidation (SALICIDE) process has been integrated into a 0.25 Ion CMOS technology. It involves rapid thermal annealing (RTA) of Ni thin films (300, Å thick) on Si substrates in the temperature range ≈400 - 700 °C. It was found that the NiSi sheet resistance (Rs) gradually decreases with decreasing linewidth. Parameters, such as RTA temperature, substrate dopant (As vs BF2) and structure (single crystal vs poly), were found to have little effects on Rs. NiSi forms a smoother interface with single crystalSi than with poly Si, and has a slightly lower resistivity. MOSFETs based on NiSi show comparable device characteristics to those obtained with Ti SALICIDE. Upon thermal annealing, NiSi remains stable at 450 °C for more than 39 hours. The same is true for 500 °C anneals up to 6 hours, except for NiSi narrow lines (<0.5 μm) on n+ poly Si substrates whose Rs is moderately increased after a 6 hr anneal. This work demonstrates that with an appropriate low-thermal budget backend process, NiSi SALICIDE can be a viable process for deep submicron ULSI technologies.

Thermal annealing effects on the luminescence and scintillation properties of CaMoO4 single crystal grown by Bridgman method

2018 ◽  
Vol 734 ◽  
pp. 179-187 ◽  
Author(s):  
Linwen Jiang ◽  
Zhenhai Wang ◽  
Hongbing Chen ◽  
Yaping Chen ◽  
Peng Chen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Bridgman Method ◽  
Annealing Effects

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

scholarly journals Incorporation of Iron Cations Into Epitaxial Sapphire Thin Films by CO-Evaporation and Subsequent Thermal Annealing

1994 ◽  
Vol 341 ◽  
Author(s):  
Ning Yu ◽  
Harriet Kung ◽  
Michael Nastasi ◽  
DeQuan Li
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Ultra Violet ◽  
Cation Sublattice ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Simple Method ◽  
Subsequent Thermal Annealing

AbstractIron-doped sapphire thin films have been successfully epitaxially grown onto sapphire single crystal substrates by electron beam deposition and subsequent thermal annealing. Amorphous A12O3 thin films, about 280–390 nm thick, cation doped with iron have been deposited on [0001] oriented sapphire substrates. Iron doping with cation concentrations (a ratio of Fe content to total cation content) up to 5 at.% can be incorporated into the octahedral sites of Al-cation sublattice during the epitaxial regrowth process at 1000–1400 C, as determined by Rutherford Backscattering Spectrometry and ion channeling measurements. Cross-sectional Transmission Electron Microscopy shows the presence of two distinct regions in the annealed films. One exhibits the epitaxial relationship with the sapphire substrate and the second region has amorphous type of contrast. External optical transmittance measurements in the ultra violet and visible light range have exhibited the absorption associated with Fe3+. This study has demonstrated a simple method of incorporating dopants into single crystal sapphire, which has potential in the fabrications of thin film planar optical waveguiles.

Ion Induced Damage and their Annealing in LiTaO3 Single Crystal

1995 ◽  
Vol 396 ◽  
Author(s):  
Z Zhang ◽  
I.A. Rusakova ◽  
W.K. Chu
Keyword(s):  
Curie Temperature ◽  
Single Crystal ◽  
Single Crystals ◽  
Thermal Annealing ◽  
Crystalline Structure ◽  
Room Temperature ◽  
Complete Recovery ◽  
Oxygen Ions ◽  
Annealing Temperatures ◽  
Crystal Interface

AbstractLiTaO3 single crystals have been implanted with 100 keV oxygen ions at room temperature with doses of 1×1014 /cm2,6xl014/cm2,1.2x1015/cm2, 6xl015/cm2, and 2xl016/cm2. Annealing temperatures ranged from 550 °C to 1075 °C. RBS-channeling and TEM were used for characterization. For partially damaged samples, complete recovery of the crystalline structure was achieved after annealing at 550 °C, which is below the Curie temperature. For totally amorphized samples, thermal annealing induced multidomain growth. These domains extend beyond the original amorphous/crystal interface deep into bulk (1 – 1.5 μm ).

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