Thermodynamical analysis of optimal recombination centers in thyristors

1978 ◽  
Vol 21 (11-12) ◽  
pp. 1571-1576 ◽  
Author(s):  
Olof Engström ◽  
Anders Alm
Keyword(s):  
Recombination Centers ◽  
Optimal Recombination

Efficient Defect Passivation with Niacin for High-Performance and Stable Perovskite Solar Cells

2021 ◽  
Author(s):  
Jing Ren ◽  
Shurong Wang ◽  
Jianxing Xia ◽  
Chengbo Li ◽  
Lisha Xie ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
High Performance ◽  
Perovskite Solar Cells ◽  
Trap States ◽  
Carrier Recombination ◽  
Defect Passivation ◽  
Recombination Centers ◽  
Charge Carrier Recombination ◽  
Halide Perovskite

Defects, inevitably produced in the solution-processed halide perovskite films, can act as charge carrier recombination centers to induce severe energy loss in perovskite solar cells (PSCs). Suppressing these trap states...

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

2021 ◽  
Vol 118 (2) ◽  
pp. 021102
Author(s):  
Dong-Pyo Han ◽  
Ryoto Fujiki ◽  
Ryo Takahashi ◽  
Yusuke Ueshima ◽  
Shintaro Ueda ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Light Emitting Diode ◽  
Green Light ◽  
Light Emitting ◽  
Recombination Centers

scholarly journals Measuring Multijet Structure of Hadronic Energy Flow or, What is a jet?

1997 ◽  
Vol 12 (30) ◽  
pp. 5411-5529 ◽  
Author(s):  
Fyodor V. Tkachov
Keyword(s):  
Energy Flow ◽  
Mass Spectra ◽  
Analytical Control ◽  
Final States ◽  
C Algebra ◽  
Approximation Errors ◽  
Basic Class ◽  
Jet Algorithms ◽  
Hadronic Energy ◽  
Optimal Recombination

Ambiguities of jet algorithms are reinterpreted as instability wrt small variations of input. Optimal stability occurs for observables possessing property of calorimetric continuity (C-continuity) predetermined by kinematical structure of calorimetric detectors. The so-called C-correlators form a basic class of such observables and fit naturally into QFT framework, allowing systematic theoretical studies. A few rules generate other C-continuous observables. The resulting C-algebra correctly quantifies any feature of multijet structure such as the "number of jets" and mass spectra of "multijet substates." The new observables are physically equivalent to traditional ones but can be computed from final states bypassing jet algorithms which reemerge as a tool of approximate computation of C-observables from data with all ambiguities under analytical control and an optimal recombination criterion minimizing approximation errors.

Effect of Interface States on the Open-Circuit Volatage in a-Si:H/c-Si Heterojunction Solar Cells

2012 ◽  
Vol 485 ◽  
pp. 454-456
Author(s):  
Lan E Luo ◽  
Chun Liang Zhong
Keyword(s):  
Open Circuit Voltage ◽  
Minority Carrier ◽  
Interface States ◽  
Open Circuit ◽  
Band Offset ◽  
Heterojunction Solar Cells ◽  
Conduction Band Offset ◽  
Photovoltaic Application ◽  
Critical Issues ◽  
Recombination Centers

The properties of the a-Si:H/c-Si interface are one of the critical issues for the photovoltaic application. The effects of the interface states on the open-circuit voltage VOC were performed by a set of simulations. VOC decreases with Dit increasing, especially at high values of Dit, since the interface states act as recombination centers to decrease the excess minority carrier density in c-Si. Since the conduction band offset ∆EC can saturate part of interface states, VOC increasing with ∆EC increasing.

Radiation induced recombination centers in organic solar cells

2012 ◽  
Vol 85 (20) ◽  
Author(s):  
R. A. Street ◽  
J. E. Northrup ◽  
B. S. Krusor
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Radiation Induced ◽  
Recombination Centers

Recombination centers inGaAs/Al0.4Ga0.6Asheterostructures investigated by optically and electrically detected magnetic resonance

1998 ◽  
Vol 58 (8) ◽  
pp. 4892-4902 ◽  
Author(s):  
T. Wimbauer ◽  
M. S. Brandt ◽  
M. W. Bayerl ◽  
N. M. Reinacher ◽  
M. Stutzmann ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Electrically Detected Magnetic Resonance ◽  
Recombination Centers

High-Spatial-Resolution Cathodoluminescence Measurement of InGaN

2002 ◽  
Vol 743 ◽  
Author(s):  
Hisashi Kanie ◽  
Hiroaki Okado ◽  
Takaya Yoshimura
Keyword(s):  
Electron Microscope ◽  
Energy Level ◽  
Spatial Resolution ◽  
Diffusion Length ◽  
High Spatial Resolution ◽  
Lower State ◽  
Measuring Apparatus ◽  
Bulk Crystals ◽  
Recombination Centers ◽  
Scanning Electron

ABSTRACTThis paper described observation of cathodoluminescence (CL) of microcrystalline InGaN bulk crystals under a scanning electron microscope (SEM) with a high-spatial-resolution (HR) CL measuring apparatus. HR-CL spectra from facets of InGaN crystals vary from facet to facet and are single peaked. Histogram analysis of the CL peak positions of HR spectra from the facets of the crystals in the area scanned during a low-resolution CL measurement shows a two-peaked form with comparable peak wavelengths. The diffusion length of a generated electron- ho le pair or an exciton from the recombination centers with a higher-energy-level state to that with a lower state is estimated to be 500 nm at the longest by the comparison of two monochromatic HR-CL images of adjoining facets.

Passivation of recombination centers on WSe2; a SEM/EBIC investigation

1988 ◽  
Vol 26 (4) ◽  
pp. 427
Author(s):  
D. Mahalu ◽  
A. Jakubowicz ◽  
R. Tenne
Keyword(s):  
Recombination Centers

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

Recombination centers in as-grown and electron-irradiated ZnO substrates

2007 ◽  
Vol 102 (9) ◽  
pp. 093504 ◽  
Author(s):  
N. T. Son ◽  
I. G. Ivanov ◽  
A. Kuznetsov ◽  
B. G. Svensson ◽  
Q. X. Zhao ◽  
...  
Keyword(s):  
Recombination Centers
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