Electron microscope investigations of the growth morphology of cadmium arsenide films vacuum deposited at various substrate temperatures

1980 ◽  
Vol 67 (2) ◽  
pp. 285-292 ◽  
Author(s):  
J. Jurusik ◽  
L. Żdanowicz
1993 ◽  
Vol 317 ◽  
Author(s):  
C.C. Umbach ◽  
J.M. Blakely

ABSTRACTEpitaxial Ge films (< 3 ML) have been grown at elevated temperatures on Si (001) grating substrates (repeat spacing of 2.0 μm) and imaged using room temperature scanning tunneling Microscopy (STM). The Ge films exhibit the 2×n reconstruction associated with missing dimer rows. The value of n and the growth morphology are influenced by the deposition rate and by annealing. At substrate temperatures of 600° C and deposition rates >0.5 ML/Min., islands elongated along the the dimer row direction nucleate at steps and on terraces. With sufficient annealing at 800° C, the islands coarsen and are eventually eliminated. The roughness of the A-type step becomes greater than that of the B-type step, which is the reverse of the situation with pure Si (001). The separation between missing dimer rows and hence the value of n are increased by annealing. Differences in substrate terrace widths due to the periodically varying step density of thegratings affect the growth Modes: two-dimensional islands occur near the extrema of the gratings whereas step flow occurs when steps are separated by ∼150 Å or less.


Deposits of lead have been grown by evaporation at pressures of ca . 10 -8 Torr and observed directly in the modified electron microscope described by Valdrè et al . (1970). The growth of epitaxial films on MoS 2 substrates and polycrystalline deposits on amorphous carbon substrates is described and discussed. Liquid deposits have been grown at substrate temperatures well below the bulk melting point of lead. The melting of solid films and solidification of liquid droplets is described and the factors which control these processes are discussed. It is shown that electron irradiation can have a pronounced effect on the nucleation of both solid and liquid lead grown on the two substrate materials used.


2014 ◽  
Vol 781 ◽  
pp. 95-106 ◽  
Author(s):  
V. Madhavi ◽  
P. Kondaiah ◽  
S. Uthanna

Thin films of Mo (1.3 at.%) doped WO3 films were deposited on glass and ITO coated glass substrates held at substrate temperatures in the range 473 673 K by RF magnetron sputtering technique. The effect of substrate temperature on the structural and morphological, and electrochromic properties of the deposited films were investigated by X-ray diffraction, scanning electron microscope, Raman spectroscope and with electrochemical cell. X-ray diffraction profiles showed that the films formed at substrate temperature of 473 K consisted of weak (020) reflection related to the orthorhombic phase of WO3 in the amorphous matrix. The films formed at substrate temperatures 473 K were of polycrystalline in nature. The crystallite size of the films increased from 12 to 43 nm with increase of substrate temperature from 473 to 673 K. The scanning electron microscope images of the films formed at 473 K showed the leaf like structure with grain size of 1.2 μm. When substrate temperature increased to 573 K the size of the grains enhanced to 2.4 μm. Raman spectra of the films confirmed the presence of characteristic vibration modes of W = O, W - O - W and O - W - O. The optical band gap of the films increased with increase of substrate temperature. The electrochromic property, that is the color efficiency increased from 42.5 to 50.5 cm2/C with the increase of substrate temperature from 473 to 673 K respectively. The structural and electrochromic properties of the Mo doped WO3 films will be correlated with the substrate temperature maintained during growth of the films.


Author(s):  
M. Shiojiri ◽  
Y. Saito ◽  
M. Sato

Crystals of Te prepared by vacuum-deposition on cleaved NaCl surfaces at temperatures ranging from 20 to 140°C have been studied by SEM and TEM observations. The deposition was done at a deposition rate of 0.3 nm/s, monitored with quartz crystal oscillating microbalance. After the deposited films were backed by carbon films, they were wet-stripped from the substrates and mounted on standard electron microscope grids.Figure 1 shows electron micrographs of the films in different thicknesses which were prepared at different substrate temperatures. At the initial stage of deposition, spherical or polyhedral crystallites with the hexagonal structure grew with random orientations on the substrates. On the substrate at room temperature, the crystallites became large keeping the same shape and the number of the crystallites increased, as the film thickness increased. On the substrates above 80°C, they grew into slender crystals elongating along the c-axes, with increasing film thickness. The number of crystals did not increased so much.


The technique of paper-supported copper electrodeposition provides examples of well-presented fractal and dense radial structures. The growths may be developed to reveal concentration gradients around the growths at low cell overpotential. Measurements for current and length scale against time, within a mid-range of cell overpotentials, fit an ohmic model of the growth conditions. To examine the relation of growth morphology to the micrometre-scale structure, we grew first at one overpotential and then continued at a lower overpotential. Electron microscope observations of this growth reveal a distinct change in microstructure from irregular to dentritic microcrystalline from the high to low potential respectively. The interface between the growths is a distinctive compact granular deposit. The granular deposit is unstable to branching and dendrite growth.


1987 ◽  
Vol 103 ◽  
Author(s):  
Douglas H. Lowndes ◽  
D. B. Geohegan ◽  
D. Eres ◽  
D. N. Mashburn ◽  
S. J. Pennycook

ABSTRACTPulsed ArF excimer laser (193 nm) photolysis has been used to deposit entirely amorphous and mixed amorphous/polycrystalline superlattice structures containing Si, Ge and Si3N4. High resolution in situ optical reflectivity measurements were used to monitor and/or control deposition. Transmission electron microscope cross-section views demonstrate that amorphous superlattice structures having highly reproducible layer thicknesses (from about 50 to several hundred A), and sharp interlayer boundaries, can be deposited at low substrate temperatures under laser photolytic control.


2002 ◽  
Vol 749 ◽  
Author(s):  
John P. Leonard ◽  
Byungha Shin ◽  
James W. McCamy ◽  
Michael J. Aziz

ABSTRACTDifferences in the homoepitaxy of Ge(001) are explored using a dual MBE/PLD deposition system. With identical substrate preparation, temperature calibration, background pressure and analysis, the system provides a unique comparison of the processes arising only from kinetic differences in the flux and at the surface. All films show mounded growth. At substrate temperatures below 200°C, PLD films are smoother than MBE films, whereas they are similar at higher temperatures.


Author(s):  
K. C. Tsou ◽  
J. Morris ◽  
P. Shawaluk ◽  
B. Stuck ◽  
E. Beatrice

While much is known regarding the effect of lasers on the retina, little study has been done on the effect of lasers on cornea, because of the limitation of the size of the material. Using a combination of electron microscope and several newly developed cytochemical methods, the effect of laser can now be studied on eye for the purpose of correlating functional and morphological damage. The present paper illustrates such study with CO2 laser on Rhesus monkey.


Author(s):  
R. A. Waugh ◽  
J. R. Sommer

Cardiac sarcoplasmic reticulum (SR) is a complex system of intracellular tubules that, due to their small size and juxtaposition to such electron-dense structures as mitochondria and myofibrils, are often inconspicuous in conventionally prepared electron microscopic material. This study reports a method with which the SR is selectively “stained” which facilitates visualizationwith the transmission electron microscope.


Author(s):  
J. N. Meador ◽  
C. N. Sun ◽  
H. J. White

The electron microscope is being utilized more and more in clinical laboratories for pathologic diagnosis. One of the major problems in the utilization of the electron microscope for diagnostic purposes is the time element involved. Recent experimentation with rapid embedding has shown that this long phase of the process can be greatly shortened. In rush cases the making of projection slides can be eliminated by taking dark field electron micrographs which show up as a positive ready for use. The major limiting factor for use of dark field micrographs is resolution. However, for conference purposes electron micrographs are usually taken at 2.500X to 8.000X. At these low magnifications the resolution obtained is quite acceptable.


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