In situ ellipsometric study of the influence of powder formation on the initial growth of glow discharge a−Si:H

1993 ◽  
Vol 233 (1-2) ◽  
pp. 297-300 ◽  
Author(s):  
U.I. Schmidt ◽  
B. Schröder ◽  
H. Oechsner
Keyword(s):  
Glow Discharge ◽  
Initial Growth ◽  
Powder Formation ◽  
Ellipsometric Study

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Nucleation and initial growth of Pd2Si crystals on Si(111)

1993 ◽  
Vol 51 ◽  
pp. 844-845
Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson
Keyword(s):  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Initial Growth ◽  
Surface And Interface ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Initial Stage ◽  
Effect Of Surface

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.

In Situ Diagnostics of Vuv Laser Cvd of Semiconductor Interfaces by Ftir Spectroscopy and Spectroscopic Ellipsometry

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Barth ◽  
J. Knobloch ◽  
P. Hess
Keyword(s):  
Film Thickness ◽  
Bulk Material ◽  
Substrate Surface ◽  
Cluster Formation ◽  
Interface Layer ◽  
Native Oxide ◽  
Initial Growth ◽  
Difference Spectra ◽  
Si Substrates

ABSTRACTThe growth of high quality amorphous hydrogenated semiconductor films was explored with different in situ spectroscopic methods. Nucleation of ArF laser-induced CVD of a-Ge:H on different substrates was investigated by real time ellipsometry, whereas the F2 laser (157nm) deposition of a-Si:H was monitored by FTIR transmission spectroscopy. The ellipsometric studies reveal a significant influence of the substrate surface on the nucleation stage, which in fact determines the electronic and mechanical properties of the bulk material. Coalescence of initial clusters occurs at a thickness of 16 Å for atomically smooth hydrogen-terminated c-Si substrates, whereas on native oxide covered c-Si substrates the bulk volume void fractions are not reached until 35 Å film thickness. For the first time we present a series of IR transmission spectra with monolayer resolution of the initial growth of a-Si:H. Hereby the film thickness was measured simultaneously using a quartz crystal microbalance with corresponding sensitivity. The results give evidence for cluster formation with a coalescence radius of about 20 Å. Difference spectra calculated for layers at different depths with definite thickness reveal that the hydrogen-rich interface layer stays at the substrate surface and does not move with the surface of the growing film. The decrease of the Urbach energy switching from native oxide to H-terminated substrates suggests a strong influence of the interface morphology on the bulk material quality.

scholarly journals Assembly Histories and Observational Properties of Simulated Early-type Galaxies

2012 ◽  
Vol 8 (S295) ◽  
pp. 354-357
Author(s):  
Peter H. Johansson
Keyword(s):  
Star Formation ◽  
Initial Growth ◽  
Early Type ◽  
Massive Galaxies ◽  
Main Galaxy ◽  
Two Phases ◽  
Late Growth ◽  
Kinematic Properties

AbstractWe demonstrate that massive simulated galaxies assemble in two phases, with the initial growth dominated by compact in situ star formation, whereas the late growth is dominated by accretion of old stars formed in subunits outside the main galaxy. We also show that 1) gravitational feedback strongly suppresses late star formation in massive galaxies contributing to the observed galaxy colour bimodality that 2) the observed galaxy downsizing can be explained naturally in the two-phased model and finally that 3) the details of the assembly histories of massive galaxies are directly connected to their observed kinematic properties.

In situ characterization of initial growth of HfO2

2009 ◽  
Vol 94 (3) ◽  
pp. 032904 ◽  
Author(s):  
L. Wang ◽  
Paul K. Chu ◽  
K. Xue ◽  
J. B. Xu
Keyword(s):  
Initial Growth ◽  
In Situ Characterization

In-situ quantification of NO synthesis in a warm air glow discharge by WMS-based Mid-IR QCL absorption spectroscopy

2022 ◽  
Author(s):  
Chuanqi Wang ◽  
Junjie Qiao ◽  
Yijia Song ◽  
Qi Yang ◽  
Dazhi Wang ◽  
...  
Keyword(s):  
Energy Efficiency ◽  
Glow Discharge ◽  
Absorption Spectroscopy ◽  
Energy Cost ◽  
High Energy ◽  
Cathode Region ◽  
Synthesis Rate ◽  
No Production ◽  
Airflow Rate

Abstract Nitric oxide (NO) is one of the most crucial products in the plasma-based nitrogen fixation process. In this work, in-situ measurements were performed for quantifying the NO synthesis spatially in a warm air glow discharge, through the method of Mid-infrared quantum cascade laser absorption spectroscopy (QCL-AS). Two ro-vibrational transitions at 1900.076 cm-1 and 1900.517 cm-1 of the ground-state NO(X) were probed sensitively by the help of the wavelength modulation spectroscopy (WMS) approach to increase the signal/noise (S/N) level. The results show a decline trend of NO synthesis rate along the discharge channel from the cathode to the anode. However, from the point of energy efficiency, the cathode region is of significantly low energy efficiency of NO production. Severe disproportionality was found for the high energy consumption but low NO production in the region of cathode area, compared to that in the positive column zone. Further analysis demonstrates the high energy cost of NO production in the cathode region, is ascribed to the extremely high reduced electric field E/N therein not selectively preferable for the processes of vibrational excitation or dissociation of N2 and O2 molecules. This drags down the overall energy efficiency of NO synthesis by this typical warm air glow discharge, particularly for the ones with short electrode gaps. Limitations of further improving the energy cost of NO synthesis by variations of the discharge operation conditions, such as discharge current or airflow rate, imply other effective manners able to tune the energy delivery selectively to the NO formation process, are sorely needed.

scholarly journals Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Initial Growth ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

Manganese Effect on Isothermal High Temperature Oxidation Behaviour of AISI 304 Stainless Steel

2008 ◽  
Vol 595-598 ◽  
pp. 1127-1134 ◽  
Author(s):  
Frédéric Riffard ◽  
Henri Buscail ◽  
F. Rabaste ◽  
Eric Caudron ◽  
Régis Cueff ◽  
...  
Keyword(s):  
Stainless Steel ◽  
High Temperature ◽  
Oxide Scale ◽  
304 Stainless Steel ◽  
Initial Growth ◽  
Aisi 304 Stainless Steel ◽  
Protective Oxide ◽  
Temperature Oxidation ◽  
Aisi 304

Chromia-forming steels are excellent candidates to resist to high temperature oxidizing atmospheres because they form protective oxide scales. The oxide scale growth mechanisms are studied by exposing AISI 304 stainless steel to high temperature conditions in air, and the analyses were carried out by means of thermogravimetry and in situ X-rays diffraction. The in situ XRD analyses carried out during high temperature AISI 304 steel oxidation in air reveals the accelerated growth of iron-containing oxides such as hematite Fe2O3 and iron-chromite FeCr2O4, when the initial germination of the oxide layer contains the presence of a manganese-containing spinel compound (1000°C). When the initial growth shows the only chromia formation (800°C), hematite formation appears differed in time. Protection against corrosion is thus increased when the initial germination of manganese-containing spinel oxide is inhibited in the oxide scale.

Small Lead and Indium Inclusions in Aluminium

1991 ◽  
Vol 235 ◽  
Author(s):  
E. Johnson ◽  
K. Hjemsted ◽  
B. Schmidt ◽  
K. K. Bourdelle ◽  
A. Johansen ◽  
...  
Keyword(s):  
Melting Point ◽  
Elevated Temperatures ◽  
Supersaturated Solution ◽  
In Situ Tem ◽  
Initial Growth ◽  
Heating And Cooling ◽  
Moiré Fringes ◽  
The Matrix ◽  
Spontaneous Phase

ABSTRACTIon implantation of lead or indium into aluminium results in spontaneous phase separation and formation of lead or indium precipitates. The precipitates grow in topotactical alignment with the matrix, giving TEM images characterized by moiré fringes. The size and density of the precipitates increase with increasing fluence until coalescence begins to occur. Implantations at elevated temperatures lead to formation of larger precipitates with well developed facets. This is particularly significant for implantations above the bulk melting point of the implanted species. Melting and solidification have been followed by in-situ TEM heating and cooling experiments. Superheating up to ∼ 50 K above the bulk melting point has been observed, and the largest inclusions melt first. Melting is associated with only partial loss of facetting of the largest inclusions. Initial growth of the inclusions occurs by trapping of atoms retained in supersaturated solution. Further growth occurs by coalescence of neighbouring inclusions in the liquid phase. Solidification is accompanied by a strong undercooling ∼ 30 K below the bulk melting point, where the smallest inclusions solidify first. Solidification is characterized by spontaneous restoration of the facets and the topotactical alignment.

scholarly journals Diagnostics of Nitrogen-methane Atmospheric Glow Discharge Used for a Mimic of Prebiotic Atmosphere

2017 ◽  
Vol 4 (1) ◽  
pp. 83-86
Author(s):  
V. Mazánková ◽  
L. Töröková ◽  
D. Trunec ◽  
F. Krčma ◽  
S. Matejčík ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Previous Investigation ◽  
Chemical Processes ◽  
Planetary Atmosphere ◽  
Gas Mixture ◽  
Prebiotic Atmosphere ◽  
Infra Red ◽  
Complex Chemistry ◽  
Life On Earth

The exploration of planetary atmosphere is being advanced by the exciting results of the Cassin-Huygens mission to Titan. The complex chemistry revealed in such atmospheres leading to the synthesis of bigger molecules is providing new insights into our understanding of how life on Earth developed. This work extends our previous investigation of nitrogen-methane (N<sub>2</sub>-CH<sub>4</sub>) atmospheric glow discharge for simulation chemical processes in prebiotic atmospheres. In presented experiments 2 % of water vapor were addet to nitrogen-methane gas mixture. Exhaust products of discharge in this gas mixture were in-situ analysed by Fourier Transform Infra Red spectroscopy (FTIR). The major products identified in spectra were: hydrogen cyanide, acetylene and acetonitrile.

Sign in / Sign up

Export Citation Format

Share Document