SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate for the power device because a JFET has no oxide-semiconductor interface in the channel region and does not use the low mobility SiC MOSFET inversion layer as a channel. Forward I-V up to 4A for SiC VJFET, Gate voltage from 2V to 3.5V by step 0.5V. Reverse I-V characteristics up to 4500V (VG=-8V) for SiC VJFET, Gate voltage from-4V to-8V by step-2V. Turn-off characteristics are studied and fast turn-off time of 136ns at room temperature under DC voltage of 600V is successfully demonstrated.