Transient copper removal rate phenomena with implications for polishing mechanisms

2022 ◽  
pp. 237-257
Author(s):  
L. Borucki ◽  
Y. Sampurno ◽  
S. Theng ◽  
A. Philipossian
Keyword(s):  
Removal Rate ◽  
Copper Removal

Effects of Alkaline Nano-SiO2 Abrasive on Planarization of 300mm Copper Patterned Wafer

2013 ◽  
Vol 634-638 ◽  
pp. 2949-2954
Author(s):  
Xin Liang Tang ◽  
Yu Ling Liu ◽  
Hong Yuan Zhang ◽  
Jie Bao
Keyword(s):  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Initial Step ◽  
Step Height ◽  
Copper Removal ◽  
Copper Wafers

Silica abrasive plays an important role in chemical mechanical planarization (CMP) of copper. In this paper, effect of different silica abrasive concentrations on copper removal rate and planarization performance of copper was investigated. The results show that the copper removal rate was increased as the concentration of silica abrasive increase. However, excessive abrasive will lead to a decreased copper removal rate. The initial step height values of the multilayer copper wafers were all about 2500Å, and after being polished for 30s, the remaining values of step height of slurry A, B, C and D were 717 Å, 906 Å, 1222 Å and 1493 Å. It indicates that alkaline copper slurries with different abrasive concentrations all had a good planarization performance on copper patterned wafer CMP. As the abrasive concentration increased, the planarization capability was enhanced.

Modified Abrasives based on fumed SiO2 and Al2O3 for the Cu CMP Process

2004 ◽  
Vol 816 ◽  
Author(s):  
D. Zeidler ◽  
J.W. Bartha ◽  
W.L ortz ◽  
R. Brandes
Keyword(s):  
Surface Quality ◽  
High Selectivity ◽  
Removal Rate ◽  
New Method ◽  
Copper Removal ◽  
Complexing Agent ◽  
Abrasive Particles ◽  
Cu Cmp ◽  
Low Rate ◽  
Fumed Sio2

AbstractNew abrasive particles based on SiO2 and Al2O3 were produced with different coating and doping. Seven specifically designed particles were dispersed to prepare slurries for Cu CMP. Glycin was used as complexing agent and hydrogenperoxid as oxidizer. The experimentally obtained removal rate, selectivity, surface quality and planarisation ability, demonstrate a significant impact of the different abrasives tested. SiO2 particles covered with Al2O3 increased the removal rate for Cu. In comparison to this behavior, a low rate for TaN proved a high selectivity copper removal required by the Cu CMP process. A new method for the planarisation length monitoring (step polish response) shows also significant differences in planarisation length (PL) by the polish of copper with slurries composed of these new particles.

Chemical-Mechanical Planarization of Copper: The Effect of Inhibitor and Complexing Agent

2003 ◽  
Vol 767 ◽  
Author(s):  
Ying Luo ◽  
Tianbao Du ◽  
Vimal Desai
Keyword(s):  
Hydrogen Peroxide ◽  
Photoelectron Spectroscopy ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Electrochemical Process ◽  
Copper Removal ◽  
Alkaline Condition ◽  
Complexing Agent ◽  
Polarization Studies ◽  
Cu Cmp

AbstractThe present investigation was focused on understanding of the oxidation, dissolution and modification of Cu surface in slurries at various pH using hydrogen peroxide as oxidizer, glycine as complexing agent and 3-amino-triazol (ATA) as inhibitor during Cu-CMP. The electrochemical process involved in the oxidative dissolution of copper was investigated by potentiodynamic polarization studies. Surface modification of copper was investigated using Xray photoelectron spectroscopy to understand the interaction of Cu-H2O2-glycine-ATA during CMP. In the absence of glycine and ATA, the copper removal rate is found to be high in a slurry with 5% H2O2 at pH 2, then it decreases with increasing pH and reaches the minimum at pH 6, it continuously increases at alkaline condition. In the presence of 0.01M glycine, the removal rate of copper decreases in acidic slurries while increases significantly in alkaline slurries. With the further addition of ATA, the copper removal rate was reduced. However, better surface planarity was obtained. The present investigation enhanced understanding of the mechanism of Cu CMP in the presence of oxidizer, complexing agent and inhibitor for formulation of a highly effective CMP-slurry.

Performance Comparisons of Abrasive Containing and Abrasive Free Slurries for Copper Low-k CMP

2002 ◽  
Vol 732 ◽  
Author(s):  
John Nguyen ◽  
Gerald Martin ◽  
Ron Carpio ◽  
Malcolm Grief ◽  
Somit Joshi
Keyword(s):  
Removal Rate ◽  
Low Cost ◽  
Copper Removal ◽  
Process Window ◽  
Low Friction ◽  
Cost Of Ownership ◽  
Percent Solid ◽  
Copper Cmp ◽  
Robust Process ◽  
Low K

AbstractThe commercially available abrasive containing slurries for copper CMP have shown some advantages in high removal rates, low friction at low down force, and minimal to no copper residues, regardless of the polisher architecture, either rotary, orbital, or linear polishing. However, the abrasive containing slurries have some disadvantages such as high dishing and erosion with more micro-scratches due to the presence of abrasives. In contrast, the abrasive free polishing slurry has lower removal rate, and seems to be sensitive to polishing architecture, but it has good planarization, low topography, less micro-scratches, and most importantly is insensitive to over-polish.At this stage, the best results for copper CMP are being achieved by the use of the multi-step and multi-slurry process in which copper is polished first, and barrier layers are polished with a different set of consumables. The intent of this paper is to focus on the first step, the copper removal step, and to compare different approaches for this first step; namely, the use of slurries containing abrasives with slurries that are free of abrasives on the orbital polisher. The combined process with low percent solid and small-sized abrasives for the bulk copper removal step and abrasive free polishing (AFP) slurry for the residual copper removal step on an orbital polisher has produced a very robust process window with excellent results including low topography, low erosion, insensitivity to over-polish and low cost of ownership.

Potential-pH Diagrams of Interest to Chemical Mechanical Planarization of Copper Thin Films

2005 ◽  
Vol 867 ◽  
Author(s):  
Serdar Aksu
Keyword(s):  
Performance Metrics ◽  
Ethylenediaminetetraacetic Acid ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Copper Removal ◽  
Chemical Components ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Interlayer Dielectric ◽  
Cu Cmp

AbstractChemical mechanical planarization (CMP), which can globally planarize both silicon dioxide (the prevalent interlayer dielectric), and copper films, has become the key process in the damascene method used for producing integrated circuit (IC) devices with multilevel copper interconnects. Cu CMP is typically carried out with slurries containing oxidizing agents, complexing agents, and corrosion inhibitors as the principal chemical components. In such slurries, complexing agents enhance the solubility of copper and increase the dissolution rate of the abraded material in Cu CMP. They also assist achieving high copper removal rates during dynamic polishing conditions. The nature of the complexing agent used, the pH and the redox potential of the slurry system are among the main factors controlling the dissolution and passivation behaviors of copper during CMP. Consequently, these factors are intimately related to the key CMP performance metrics such as removal rate and planarity. In this paper, potentialpH diagrams of copper in aqueous systems containing a number of organic complexing agents including ethylenediaminetetraacetic acid (EDTA), nitrilotriacetic acid (NTA), oxalic acid and malonic acid are presented. The predominance regions of copper complexes under different copper and ligand activities and their implications on copper removal during CMP are discussed.

Effects of Process Parameters on Surface Roughness and MRR in the hard turning of EN 36 steel

2018 ◽  
pp. 102-110
Author(s):  
Amritpal Singh ◽  
Rakesh Kumar
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Material Removal ◽  
Hard Turning ◽  
Control Parameter ◽  
Removal Rate ◽  
Cutting Speed ◽  
Depth Of Cut ◽  
Cutting Condition ◽  
Dry Cutting

In the present study, Experimental investigation of the effects of various cutting parameters on the response parameters in the hard turning of EN36 steel under the dry cutting condition is done. The input control parameters selected for the present work was the cutting speed, feed and depth of cut. The objective of the present work is to minimize the surface roughness to obtain better surface finish and maximization of material removal rate for better productivity. The design of experiments was done with the help of Taguchi L9 orthogonal array. Analysis of variance (ANOVA) was used to find out the significance of the input parameters on the response parameters. Percentage contribution for each control parameter was calculated using ANOVA with 95 % confidence value. From results, it was observed that feed is the most significant factor for surface roughness and the depth of cut is the most significant control parameter for Material removal rate.

Performance Analysis on Eco-friendly Machining of Ti6Al4V using Powder Mixed with Different Dielectrics in WEDM

2020 ◽  
Vol 17 (3) ◽  
pp. 8128-8139
Author(s):  
S. Chakraborty ◽  
S. Mitra ◽  
D. Bose
Keyword(s):  
Metal Removal ◽  
Removal Rate ◽  
Machining Process ◽  
Process Efficiency ◽  
Machining Parameters ◽  
Dielectric Fluids ◽  
High Emission ◽  
Pulse On Time ◽  
Pulse Off Time ◽  
Wedm Process

The recent scenario of modern manufacturing is tremendously improved in the sense of precision machining and abstaining from environmental pollution and hazard issues. In the present work, Ti6Al4V is machined through wire EDM (WEDM) process with powder mixed dielectric and analyzed the influence of input parameters and inherent hazard issues. WEDM has different parameters such as peak current, pulse on time, pulse off time, gap voltage, wire speed, wire tension and so on, as well as dielectrics with powder mixed. These are playing an essential role in WEDM performances to improve the process efficiency by developing the surface texture, microhardness, and metal removal rate. Even though the parameter’s influencing, the study of environmental effect in the WEDM process is very essential during the machining process due to the high emission of toxic vapour by the high discharge energy. In the present study, three different dielectric fluids were used, including deionised water, kerosene, and surfactant added deionised water and analysed the data by taking one factor at a time (OFAT) approach. From this study, it is established that dielectric types and powder significantly improve performances with proper set of machining parameters and find out the risk factor associated with the PMWEDM process.

Performance Analysis of Trihexyltetradecylphosphonium Chloride Ionic Fluid under MQL Condition in Hard turning

2020 ◽  
Vol 17 (1) ◽  
pp. 7629-7647
Author(s):  
A. Pandey ◽  
R. Kumar ◽  
A. K. Sahoo ◽  
A. Paul ◽  
A. Panda
Keyword(s):  
Material Removal Rate ◽  
Feed Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Cutting Speed ◽  
Coconut Oil ◽  
Chip Morphology ◽  
Weight Fraction ◽  
Cutting Fluid ◽  
Depth Of Cut

The current research presents an overall performance-based analysis of Trihexyltetradecylphosphonium Chloride [[CH3(CH2)5]P(Cl)(CH2)13CH3] ionic fluid mixed with organic coconut oil (OCO) during turning of hardened D2 steel. The application of cutting fluid on the cutting interface was performed through Minimum Quantity Lubrication (MQL) approach keeping an eye on the detrimental consequences of conventional flood cooling. PVD coated (TiN/TiCN/TiN) cermet tool was employed in the current experimental work. Taguchi’s L9 orthogonal array and TOPSIS are executed to analysis the influences, significance and optimum parameter settings for predefined process parameters. The prime objective of the current work is to analyze the influence of OCO based Trihexyltetradecylphosphonium Chloride ionic fluid on flank wear, surface roughness, material removal rate, and chip morphology. Better quality of finish (Ra = 0.2 to 1.82 µm) was found with 1% weight fraction but it is not sufficient to control the wear growth. Abrasion, chipping, groove wear, and catastrophic tool tip breakage are recognized as foremost tool failure mechanisms. The significance of responses have been studied with the help of probability plots, main effect plots, contour plots, and surface plots and the correlation between the input and output parameters have been analyzed using regression model. Feed rate and depth of cut are equally influenced (48.98%) the surface finish while cutting speed attributed the strongest influence (90.1%). The material removal rate is strongly prejudiced by cutting speed (69.39 %) followed by feed rate (28.94%) whereas chip reduction coefficient is strongly influenced through the depth of cut (63.4%) succeeded by feed (28.8%). TOPSIS significantly optimized the responses with 67.1 % gain in closeness coefficient.

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