Elastic strains in antler trabecular bone determined by synchrotron X-ray diffraction

2008 ◽  
Vol 4 (6) ◽  
pp. 1677-1687 ◽  
Author(s):  
R. Akhtar ◽  
M.R. Daymond ◽  
J.D. Almer ◽  
P.M. Mummery
Keyword(s):  
Trabecular Bone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Elastic Strains

Elastic strains in quantum dots studied by high resolution X-ray diffraction

1996 ◽  
Vol 40 (1-8) ◽  
pp. 373-377 ◽  
Author(s):  
V Holy ◽  
A.A Darhuber ◽  
G Bauer ◽  
P.D Wang ◽  
Y.P Song ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Elastic Strains

Micro-Tensile and Fatigue Testing of Copper Thin Films on Substrates

1998 ◽  
Vol 546 ◽  
Author(s):  
M. Hommel ◽  
O. Kraft ◽  
S. P. Baker ◽  
E. Arzt
Keyword(s):  
Elastic Strain ◽  
Fatigue Testing ◽  
Tensile Tests ◽  
Copper Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tensile Tester ◽  
Elastic Strains ◽  
External Strain

AbstractA special micro-tensile tester was used to carry out tensile tests of thin copper films on substrates. The elastic strain in the film was measured in-situ using x-ray diffraction and the total strain with an external strain gage. From the elastic strains the stresses in the films were calculated and stress-strain curves were obtained. It was observed that the flow stress increases with decreasing film thickness. The method was also applied to investigate the mechanical behavior of films under cyclic loading.

In-Situ Study of Dynamic Structural Rearrangements During Stress Relaxation

1994 ◽  
Vol 38 ◽  
pp. 243-254 ◽  
Author(s):  
A. D. Westwood ◽  
C. E. Murray ◽  
I. C. Noyan
Keyword(s):  
Stress Relaxation ◽  
Structural Changes ◽  
Applied Strain ◽  
Homogeneous Distribution ◽  
Structural Rearrangements ◽  
X Ray Diffraction ◽  
X Ray ◽  
In Situ Study ◽  
Elastic Strains

Abstract We have conducted in-situ, real-time x-ray diffraction experiments to probe the dynamic structural changes occurring in copper during loading and then on relaxation. The 331 KαI, KαII peaks were used to monitor the development of elastic strains during loading, and their response during relaxation. The peak width was studied to better understand the structural changes that occur during loading, and more importantly on relaxation, since it is these structural rearrangements that reduce the overall strain in the system and allow the stress to relax. The results revealed that the structure is highly mobile immediately following the start of stress relaxation. The mobility decreases with time, scales with the magnitude of the applied strain and is highly dependent upon the applied strain rate. In addition, it was apparent that the KαI and KαII peaks do not respond in the same way to the elastic strains and that they also show different structural rearrangements. This suggests an in homogeneous distribution of displacements within the sample.

X-Ray Diffraction Analysis of Elastic Strains at the Nanoscale

2011 ◽  
pp. 233-258
Author(s):  
Olivier Thomas ◽  
Odile Robach ◽  
Stéphanie Escoubas ◽  
Jean-Sébastien Micha ◽  
Nicolas Vaxelaire ◽  
...  
Keyword(s):  
Diffraction Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Elastic Strains

Measurement of Elastic Strains in Crystal Surfaces by X-Ray Diffraction Topography

1967 ◽  
Vol 11 ◽  
pp. 385-393
Author(s):  
Brian R. Lawn
Keyword(s):  
Strain Field ◽  
Crystal Surface ◽  
Silicon Surfaces ◽  
X Ray Diffraction ◽  
Crystal Surfaces ◽  
Strain Fields ◽  
Diamond Surfaces ◽  
X Ray ◽  
Detailed Nature ◽  
Elastic Strains

AbstractThe use of X-ray topographic techniques for studying elastic strains in crystals deformed at their surfaces is becoming widespread, especially in the field of silicon semiconductor devices. Although the broad features of the phenomenological processes involved in producing the strain patterns on the X-ray micrographs are understood, little attention has been devoted to evaluating the detailed nature or range of the strain fields in the crystal. In this paper, an clastic model is proposed for cases in which a region of crystal surface is uniformly deformed over a thin layer. With this model, the associated strain field in the surrounding crystal, which is readily computed from elasticity theory, may be characterized by a single parameter. The model is in accord with observed strain patterns on topographs of abraded diamond surfaces and silicon surfaces onto which a strip of metal film has been evaporated. From the spatial range of the diffraction contrast, an estimate of the parameter characterizing the strain field may be made.

Measuring the interface stress: Silver/nickel interfaces

1999 ◽  
Vol 14 (11) ◽  
pp. 4358-4365 ◽  
Author(s):  
D. Josell ◽  
J. E. Bonevich ◽  
I. Shao ◽  
R. C. Cammarata
Keyword(s):  
Interface Stress ◽  
Bilayer Thickness ◽  
Surface Thermodynamics ◽  
X Ray Diffraction ◽  
Multilayered Thin Film ◽  
X Ray ◽  
Direct Measurements ◽  
Volume Stress ◽  
Deposited Films ◽  
Elastic Strains

Interface stress is a surface thermodynamics quantity associated with the reversible work of elastically straining an internal solid interface. In a multilayered thin film, the combined effect of the interface stress of each interface results in an in-plane biaxial volume stress acting within the layers of the film that is inversely proportional to the bilayer thickness. We calculated the interface stress of an interface between {111} textured Ag and Ni on the basis of direct measurements of the dependence of the in-plane elastic strains on the bilayer thickness. The strains were obtained using transmission x-ray diffraction. Unlike previous studies of this type, we used freestanding films so that there was no need to correct for intrinsic stresses resulting from forces applied by the substrate that can lead to large uncertainties of the calculated interface stress value. Based on the lattice parameters of the bulk, pure elements, an interface stress of −2.02 ± 0.26 N/m was calculated using the x-ray diffraction results from films with bilayer thicknesses greater than 5 nm. This value is somewhat smaller than previous measurements obtained from as-deposited films supported by substrates. For smaller bilayer thicknesses the apparent interface stress becomes smaller in magnitude, possibly due to a loss of layering in the specimens.

HR XRD and Emission of InxGa1-xAs/GaAs quantum wells with embedded InAs quantum dots at the variation of InxGa1-xAs composition

2013 ◽  
Vol 1617 ◽  
pp. 13-18
Author(s):  
Leonardo G. Vega Macotela ◽  
Ricardo Cisneros Tamayo ◽  
Georgiy Polupan
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Technological Changes ◽  
Structural Effects ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Versus Parameter ◽  
Physical Reasons ◽  
Elastic Strains

ABSTRACTThe high resolution X ray diffraction (HR-XRD) diagrams have been studied in the GaAs /InxGa1-xAs /In0.15Ga0.85As/GaAs quantum wells with embedded InAs quantum dots (QDs) in dependence on the composition of the capping InxGa1-xAs layers. The parameter x in capping InxGa1-xAs layers varied from the range 0.10-0.25. These technological changes have been accompanied by the variation non-monotonously of InAs QD emission. Numerical simulation of HR-XRD results has shown that the level of elastic strains and the composition of quantum layers vary none monotonously in studied QD structures. Simultaneously it was revealed that the process of Ga/In inter diffusion at the InxGa1-xAs/InAs QD interface are characterized by the dependence non monotonous versus parameter x in capping InxGa1-xAs layers. The physical reasons of the mentioned optical and structural effects in studied structures have been discussed.

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