Band-pass filter with high quality factor based on current differencing transconductance amplifier and current amplifier

Author(s):  
Abdullah Yesil ◽  
Firat Kacar
2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Neeta Pandey ◽  
Sajal K. Paul

This paper presents a single current difference transconductance amplifier (CDTA) based all-pass current mode filter. The proposed configuration makes use of a grounded capacitor which makes it suitable for IC implementation. Its input impedance is low and output impedance is high, hence suitable for cascading. The circuit does not use any matching constraint. The nonideality analysis of the circuit is also given. Two applications, namely, a quadrature oscillator and a highQband pass filter are developed with the proposed circuit. The functionality of the circuit is verified with SPICE simulation using 0.35 μm TSMC CMOS technology parameters.


2016 ◽  
Vol 26 (04) ◽  
pp. 1750055 ◽  
Author(s):  
Aymen Ben Hammadi ◽  
Mongia Mhiri ◽  
Fayrouz Haddad ◽  
Sehmi Saad ◽  
Kamel Besbes

This paper describes the design of a novel cascode-grounded tunable active inductor and its application in an active band-pass filter (BPF) suitable for multi-band radio frequency (RF) front-end circuits. The proposed active inductor circuit uses feedback resistance to improve the equivalent inductance and the quality factor. The novelty of this work lies on the use of a few number of multi-finger transistors, which allows reducing strongly the power consumption and the silicon area. In other words, we demonstrate that the use of variable P-type Metal-Oxide-Semiconductor (PMOS) resistor and controllable current source have a good potential for wide tuning in terms of inductance value, quality factor and frequency operation. The RF BPF is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multi-band operation is achieved through control voltages. The designed active inductor and RF BPF have been implemented in a standard 0.13[Formula: see text][Formula: see text]m Complementary Metal Oxide Semiconductor (CMOS) technology. The simulation results are compared between schematic and post-layout design for inductance value, quality factor, transmission coefficient S21 and noise. This design yields encouraging results: the inductance value can be tuned from 10.94 to 44.17[Formula: see text]nH with an optimal quality factor around 2,581. In addition, the center frequency of the BPF can be tuned between 2 and 4.84[Formula: see text]GHz with an average insertion loss of [Formula: see text][Formula: see text]dB. Throughout this range, the noise figure is between 10.49 and 9.22[Formula: see text]dB with an input referred 1[Formula: see text]dB compression point of [Formula: see text][Formula: see text]dBm and IIP3 of 7.36[Formula: see text]dBm. The filter occupies 25.43[Formula: see text][Formula: see text]m of active area without pads and consumes between 2.38 and 2.84[Formula: see text]mW from a 1[Formula: see text]V supplying voltage.


2012 ◽  
Vol 6 (3) ◽  
pp. 187 ◽  
Author(s):  
P. Ahmadi ◽  
B. Maundy ◽  
A.S. Elwakil ◽  
L. Belostotski

Electronics ◽  
2021 ◽  
Vol 10 (22) ◽  
pp. 2853
Author(s):  
Satheeshkumar Palanisamy ◽  
Balakumaran Thangaraju ◽  
Osamah Ibrahim Khalaf ◽  
Youseef Alotaibi ◽  
Saleh Alghamdi

In this paper, a compact bandpass filter with improved band stop and band pass characteristics for wireless applications is built with four internal conductive poles in a single resonating cavity, which adds novel quad-resonating modes to the realization of band pass filter. This paper covers the design and testing of the S-band combline coaxial cavity filter which is beneficial in efficient filtering functions in wireless communication system design. The metallic cavity high Q coaxial resonators have the advantages of narrowband, low loss, better selectivity and high potential for power handling, as compared to microstrip filter in the application to determine the quality factor of motor oils. Furthermore, the tuning of coupling screws in the combline filter allows in frequency and bandwidth adjustments. An impedance bandwidth of 500 MHz (fractional bandwidth of 12.8%) has been achieved with an insertion loss of less than 2.5 dB and return loss of 18 dB at the resonant frequency. Four-pole resonating cavity filters have been developed with the center frequency of 4.5 GHz. Insert loss at 0 dB and estimated bandwidth at 850 MHz and a quality factor of 4.3 for the band pass frequencies between 4 and 8 GHz is seen in the simulated result.


2004 ◽  
Vol 14 (03) ◽  
pp. 690-695
Author(s):  
A. GHORI ◽  
P. GHOSH

Operational Transconductance Amplifier (OTA) is an excellent current mode device suited very well for VLSI implementation. In this contribution we report realization of OTA using Silicon-On-Insulator (SOI) structure based MOSFETs and compared them to OTA designed with bulk MOSFET. SOI based OTA outperformed bulk MOSFET OTA giving close to 10 GHz improvement in high frequency f T . A band-pass filter was implemented with SOI based OTA with a center frequency of 7 GHz and a bandwidth of 480 kHz.


2013 ◽  
Vol 562-565 ◽  
pp. 668-673
Author(s):  
Zhi Qiang Gao ◽  
Wei Zheng ◽  
Liang Yin ◽  
Xiao Wei Liu

The paper is presented the design of high-frequency OTA-C band-pass filter with on-chip automatic tuning. In this design, the linear operational transconductance amplifier (OTA) is proposed based on fully complementary differential pairs with source degneration, and achieves both low-distortion figures and high-frequency operation. The matching design between the master filter and the slave filter is also given, and the non-ideality effect of the OTA-C filters with on-chip automatic tuning is discussed. The whole circuit is designed using TSMC 0.18μm 1.8V CMOS process and post-simulation results show the center frequency of filter is 105MHz with relative error of 0.4%, when the process corner varies between SS, TT, FF, and the temperature from-20 to 120°C.


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