Current–voltage characterization of Au contact on sol–gel ZnO films with and without conducting polymer

2010 ◽  
Vol 256 (14) ◽  
pp. 4493-4496 ◽  
Author(s):  
Yow-Jon Lin ◽  
Mei-Jyuan Jheng ◽  
Jian-Jhou Zeng
2019 ◽  
Vol 49 (3) ◽  
pp. 1993-2002
Author(s):  
Manuel A. Hernández-Ochoa ◽  
Humberto Arizpe-Chávez ◽  
Rafael Ramírez-Bon ◽  
Alain Pérez-Rodríguez ◽  
Manuel Cortez-Valadez ◽  
...  

2020 ◽  
Vol 978 ◽  
pp. 384-389
Author(s):  
Sritama Roy ◽  
Saswati Soumya Dash ◽  
Prasanna Kumar Sahu ◽  
Smita Mishra ◽  
Jyoti Prakash Kar

Zinc Oxide (ZnO) thin films were produced by the sol gel dip coating process on the p-type silicon substrate with various withdrawal speeds changing from 1 to 4 cm/min, respectively. The films were annealed at a temperature of 500 °C for an hour in air ambient. The thin film thickness was found to be raised with the rise in withdrawal speed. The uniform distribution of the grains was appeared for all the films. The evolution of c-axis oriented (002) peak was revealed from X-ray diffraction (XRD) studies. The microstructural and optical properties of ZnO films were investigated by Raman, FTIR and photoluminescence spectroscopy (PL). The resistive switching properties of ZnO based memristors were studied by performing the current-voltage (I-V) measurements, where the thin films coated with lower withdrawal speed, have shown better switching property with rapid rise and fall of current during SET and RESET process, respectively.


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
S. Çetinkaya ◽  
H. A. Çetinkara ◽  
F. Bayansal ◽  
S. Kahraman

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. ConventionalI-Vand Norde’s methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.


2017 ◽  
Author(s):  
Jide Zhang ◽  
Xin Sun ◽  
Tong Qi ◽  
Ge Ren ◽  
Yingyu Shan ◽  
...  
Keyword(s):  
Sol Gel ◽  

2013 ◽  
Vol 22 (03) ◽  
pp. 1350037 ◽  
Author(s):  
A. R. A. RASHID ◽  
P. S. MENON ◽  
S. SHAARI

In this paper, we report the fabrication and characterization of an ultraviolet sensing by using Al -doped ZnO films coated on quartz slide and silica fiber optic. Undoped ZnO , 0.5, 1, 2 and 3 at.% of Al were prepared by sol–gel method with annealing temperature of 400°C for 1 h. The presence of spherical shaped nanoparticles and hexagonal (wurtzite) structure were detected for Al doped ZnO by using FESEM and XRD. The band gap values increased by adding Al due to the increment of carrier concentration. I–V curves reveal an ohmic line and improvement in electrical conductivity when the samples are illuminated by ultraviolet (UV) light with a wavelength of 365 nm. At 1 at.% of Al , the film have a larger increment in photocurrent response when illuminated with UV light compared to undoped ZnO and higher concentration (2 at.% and 3 at.%) of Al . For coated fiber optic, the fiber operates under leaky mode and the refractive index of ZnO is decreasing under UV radiation. There is a small drop in output intensity and increased abruptly which depends on the changes of ZnO refractive index. The thin films have a longer recovery time than response time.


2016 ◽  
Vol 15 (04) ◽  
pp. 1650014 ◽  
Author(s):  
Bo He ◽  
Jing Xu ◽  
HuanPo Ning ◽  
Hao Xiong ◽  
HuaiZhong Xing ◽  
...  

The nanostructured ZnO film was prepared on a texturized Si wafer by a simple sol–gel method to fabricate n-ZnO/p-Si heterojunction photoelectric device. The novel sol–gel method is cheap and convenient. The structural, optical and electrical properties of the nanostructured ZnO film were studied by XRD, SEM, XPS, PL, UV–Vis spectrophotometer and Hall effect measurement. The current–voltage (I–V) curve of nanostructured ZnO/p-Si heterojunction device shows good rectifying behavior. Good photoelectric behavior is obtained.


2005 ◽  
Vol 64 (3) ◽  
pp. 133-136
Author(s):  
S. Ray ◽  
S. Chakrabarti ◽  
S. Bhattacharya ◽  
S. Chaudhuri

2012 ◽  
Vol 510-511 ◽  
pp. 186-193 ◽  
Author(s):  
Ashari Maqsood ◽  
M. Islam ◽  
M. Ikram ◽  
S. Salam ◽  
S. Ameer

ZnO thin films were prepared by sol-gel method. Prepared thin films were then characterized by SEM, XRD, EDX and Hall effect measurements. SEM confirmed the morphological studies of ZnO thin films. Crystallite size is calculated using the Scherrer formula. Crystallite and grain sizes are obtained through XRD and SEM. EDS analysis confirms mass percentage of ZnO deposited. Decreasing trend of magneto resistance with temperature is observed. The optical transmission spectra of the solgel deposited ZnO thin films showed high transmittance (>70%) in the visible region and indicates that the transmittance of ZnO films gradually decreased as the thickness increased. Decreasing trend of resistivity and sheet resistance with thickness are also observed. The IV characterization of ZnO thin films under influence of UV and dark conditions are reported. The dc electrical resistivity data follow the hoping model.


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