Influence of substrate bias voltage on the properties of TiO 2 deposited by radio-frequency magnetron sputtering on 304L for biomaterials applications

2017 ◽  
Vol 395 ◽  
pp. 72-77 ◽  
Author(s):  
L. Bait ◽  
L. Azzouz ◽  
N. Madaoui ◽  
N. Saoula
2019 ◽  
Vol 70 (7) ◽  
pp. 112-116
Author(s):  
Mourad Azibi ◽  
Nadia Saoula ◽  
Hamid Aknouche

Abstract In order to study the influence of the substrate bias on the properties of ZrN thin films deposited by radio-frequency magnetron sputtering for biomedical application. Films of ZrN were grown onto 316L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure zirconium target in Ar - N2 gas mixture. The substrate bias voltage was varied from 0 to −100 V, which produces a variation in the structural and electrochemical properties of the obtained films. The deposited films were characterized by X-Rays Diffraction, Atomic Force Microscopy, scanning force microscopy and potentiodynamic polarization.


2015 ◽  
Vol 656-657 ◽  
pp. 80-85
Author(s):  
Zhao Zhi Liu ◽  
Feng Xu ◽  
Xu Hui Zhang ◽  
Dun Wen Zuo

Cubic Boron Nitride (cBN) has wide application prospect in the field of high performance cutting tool, for its outstanding mechanical properties. In this paper, the cBN coating was synthesized on cement carbide by chemical vapor deposition nanocrystalline diamond interlayer in radio frequency magnetron sputtering system. The SEM, FTIR and AFM were used to investigate the microstructure, purity and morphology of the cBN film. The research was carried out on the effect of the deposition parameters on the cBN content in the film. High temperature and high pressure locally in the substrate is an important factor of transformation of cubic phase BN from hexagonal phase BN. There is a narrow optimization parameters window in cBN synthesis by ion bombardment assist radio frequency magnetron sputtering method. The good quality of cBN film can be obtained by a combination of moderate substrate bias voltage and gas pressure, high substrate temperature and a certain N2 partial pressure.


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