Time evolution of secondary electron emission and trapped charge accumulation in polyimide film under various primary electron irradiation currents

2016 ◽  
Vol 390 ◽  
pp. 346-349 ◽  
Author(s):  
Bai-Peng Song ◽  
Run-Dong Zhou ◽  
Guo-Qiang Su ◽  
Hai-Bao Mu ◽  
Guan-Jun Zhang ◽  
...  
Keyword(s):  
Time Evolution ◽  
Electron Irradiation ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Polyimide Film ◽  
Primary Electron ◽  
Charge Accumulation ◽  
Trapped Charge

Temperature dependence of surface charging of NaCl under electron irradiation: role of secondary electron emission

1994 ◽  
Vol 81 (2) ◽  
pp. 215-221 ◽  
Author(s):  
W.G. Durrer ◽  
M. Portillo ◽  
P. Wang ◽  
D.P. Russell
Keyword(s):  
Temperature Dependence ◽  
Electron Irradiation ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Surface Charging

Effect of Primary-Electron Diffusion on Secondary-Electron Emission

1972 ◽  
Vol 5 (11) ◽  
pp. 4309-4324 ◽  
Author(s):  
Alan J. Bennett ◽  
Laura M. Roth
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Primary Electron ◽  
Electron Diffusion

Study of Secondary Electron Emission Depended on Surface Charge of Space Insulator Materials

2014 ◽  
Vol 716-717 ◽  
pp. 137-141
Author(s):  
Na Feng ◽  
De Tian Li ◽  
Sheng Sheng Yang ◽  
Yi Feng Chen ◽  
Dao Tang Tang ◽  
...  
Keyword(s):  
Mathematical Model ◽  
Electron Irradiation ◽  
Electron Emission ◽  
Essential Role ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Dielectric Surface ◽  
Electron Bombardment ◽  
Secondary Electrons ◽  
Surface Charging

Secondary electron emission (SEE) processes play an essential role in spacecraft surface charging. It is difficult to study SEE of insulator whose surface cumulates charges by incident electron bombardment because of poor conductivity. This paper investigated the theoretical process of generation, transfer and escape of secondary electrons, and finally the paper presented a mathematical model to calculate the secondary electron emission. We also have improved measurement system to measure total SEE coefficient from dielectric with 1-5 keV electron irradiation which is perfectly fit to mathematical model, and the SEE coefficient with different surface charging is investigated. The results indicate the SEE coefficient decreases with positive charging and increase with negative charging of dielectric surface.

scholarly journals SECONDARY ELECTRON EMISSION FROM THIN ALUMINIUM FOILS PRODUCED BY HIGH ENERGY ELECTRON BEAMS

2021 ◽  
pp. 38-41
Author(s):  
S.H. Karpus ◽  
G.D. Kovalenko ◽  
Yu.H. Kazarinov ◽  
V.M. Dubina ◽  
V.Y. Kasilov ◽  
...  
Keyword(s):  
Experimental Data ◽  
Electron Beam ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
High Energy ◽  
Secondary Emission ◽  
Primary Electron ◽  
Primary Electron Beam ◽  
Thin Foils

The description of the experimental equipment and technique for measuring the secondary emission of elec-trons (SEE) with application of accelerated electrons at the linear accelerator of the IHEPNP NSC KIPT with ener-gies up to 30 MeV and a standard secondary emission monitor [1] are presented. Experimental data of secondary electron emission yields from thin aluminum targets (8 and 50 μm) for primary electron beam energies of 16 and 25 MeV have been experimentally measured. The analysis of the experimental data and their comparison with the theory are carried out. It is shown that the proposed technique for measuring the yields of secondary electron emis-sion is useful and applied for study of low-energy and δ-electrons yields from thin foils, as well as to research the effect of the density effect depending on the energy of the primary electron beam.

AES Investigation of Inhomogenous Metal-Insulator Samples

2005 ◽  
Vol 11 (6) ◽  
pp. 567-571 ◽  
Author(s):  
Gábor Dobos ◽  
György Vida ◽  
Zoltán Tóth ◽  
Katalin Josepovits
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Surface Coverage ◽  
Secondary Electron Emission ◽  
Oxide Thickness ◽  
Primary Electron ◽  
Metal Insulator ◽  
Total Electron ◽  
Emission Yield ◽  
Effect Of Surface

In this article, the secondary electron-emission properties of both vertically and laterally inhomogeneous samples are discussed. To study the effect of surface coverage, the total electron-emission yield of tungsten and niobium samples was measured as a function of primary electron energy and oxide thickness. A method is suggested to avoid charging difficulties during AES measurements of samples that consist of both metal and various insulator parts.

THEORETICAL RESEARCH OF SECONDARY ELECTRON EMISSION FROM NEGATIVE ELECTRON AFFINITY SEMICONDUCTORS

2019 ◽  
Vol 26 (04) ◽  
pp. 1850181 ◽  
Author(s):  
AI-GEN XIE ◽  
YANG YU ◽  
YA-YI CHEN ◽  
YU-QING XIA ◽  
HAO-YU LIU
Keyword(s):  
Electron Affinity ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Primary Electron ◽  
Theoretical Research ◽  
Negative Electron Affinity ◽  
Secondary Electron Yield ◽  
Electron Yield ◽  
Yield Formula

Based on primary range [Formula: see text], relationships among parameters of secondary electron yield [Formula: see text] and the processes and characteristics of secondary electron emission (SEE) from negative electron affinity (NEA) semiconductors, the universal formulas for [Formula: see text] at [Formula: see text] and at [Formula: see text] for NEA semiconductors were deduced, respectively; where [Formula: see text] is incident energy of primary electron. According to the characteristics of SEE from NEA semiconductors with [Formula: see text], [Formula: see text], deduced universal formulas for [Formula: see text] at [Formula: see text] and at [Formula: see text] for NEA semiconductors and experimental data, special formulas for [Formula: see text] at 0.5[Formula: see text] of several NEA semiconductors with [Formula: see text] were deduced and proved to be true experimentally, respectively; where [Formula: see text] is the [Formula: see text] at which [Formula: see text] reaches maximum secondary electron yield. It can be concluded that the formula for [Formula: see text] of NEA semiconductors with [Formula: see text] was deduced and could be used to calculate [Formula: see text], and that the method of calculating the 1/[Formula: see text] of NEA semiconductors with [Formula: see text] is plausible; where [Formula: see text] is the probability that an internal secondary electron escapes into vacuum upon reaching the surface of emitter, and 1/[Formula: see text] is mean escape depth of secondary electron.

Formulae for low-energy secondary electron yield from different kinds of emitters as a function of measurable variables

2017 ◽  
Vol 31 (10) ◽  
pp. 1750105 ◽  
Author(s):  
Ai-Gen Xie ◽  
Kun Zhon ◽  
De-Lin Zhao ◽  
Yu-Qing Xia
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Primary Electron ◽  
Low Energy ◽  
Secondary Electron Yield ◽  
Universal Formula ◽  
Electron Yield ◽  
Energy Formula ◽  
Yield Formula

Based on the characteristics of secondary electron emission and the relationships among parameters of secondary electron yield [Formula: see text] in the low-energy range of [Formula: see text] eV (low-energy [Formula: see text]), the universal formula for low-energy [Formula: see text] as a function of [Formula: see text], [Formula: see text] and maximum [Formula: see text] was deduced, where [Formula: see text] and [Formula: see text] are the incident energies of primary electron and of [Formula: see text], respectively. From the deduced universal formula and experimental low-energy [Formula: see text] from metals, semiconductors and insulators, special formula for low-energy [Formula: see text] from metals as a function of [Formula: see text], [Formula: see text] and [Formula: see text] and that for low-energy [Formula: see text] from semiconductors and insulators as a function of [Formula: see text], [Formula: see text] and [Formula: see text] were deduced, respectively. The results were analyzed, it can be concluded that the two deduced special formulae can be used to calculate low-energy [Formula: see text] from metals, semiconductors and insulators, respectively.

Sign in / Sign up

Export Citation Format

Share Document