Anisotropic piezoelectric response of ion beam sputtered aluminum nitride thin films textured along [101¯0]-axis: A field dependent X-ray diffraction investigation

AbstractAnalysis of the phase behavior, structure, and composition of aluminum nitride thin films with up to 22% boron prepared by ion-beam assisted deposition is presented. the c-lattice constant of the film decreased with increasing boron content as expected from the formation of an aIN - wurtzite BN alloy. there was no evidence for separate boron nitride precipitation from either X-ray diffraction or FTIR. IN contrast, auger electron spectroscopy of the boron present in the films suggested that two types of boron bonding was present.

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Characterization of titanium-aluminum nitride thin films by ion beam techniques and X-ray diffraction

Vacuum ◽

10.1016/0042-207x(94)90317-4 ◽

1994 ◽

Vol 45 (4) ◽

pp. 441-446 ◽

Cited By ~ 6

Author(s):

FC Stedile ◽

FL Freire ◽

WH Schreiner ◽

IJR Baumvol

Keyword(s):

Thin Films ◽

Aluminum Nitride ◽

Ion Beam ◽

X Ray Diffraction ◽

X Ray ◽

Titanium Aluminum ◽

Titanium Aluminum Nitride

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Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers

MRS Proceedings ◽

10.1557/proc-0892-ff13-01 ◽

2005 ◽

Vol 892 ◽

Author(s):

Qianghua Wang ◽

Jianzeng Xu ◽

Changhe Huang ◽

Gregory W Auner

Keyword(s):

Thin Films ◽

Aluminum Nitride ◽

Ultrasonic Transducers ◽

X Ray Diffraction ◽

Effective Coupling ◽

Resonant Frequencies ◽

X Ray ◽

Coupling Factors ◽

Sandwiched Structure

AbstractThis paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.

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Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

MRS Proceedings ◽

10.1557/proc-242-469 ◽

1992 ◽

Vol 242 ◽

Cited By ~ 1

Author(s):

W. J. Meng ◽

T. A. Perry ◽

J. Heremans ◽

Y. T. Cheng

Keyword(s):

Thin Films ◽

Aluminum Nitride ◽

Raman Scattering ◽

High Vacuum ◽

Ultra High Vacuum ◽

X Ray Diffraction ◽

X Ray ◽

Reactive Sputter Deposition ◽

Transmission Electron ◽

Substrate Temperatures

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

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Superconducting YBaCuO thin Films by Cu-Ion Implantation

MRS Proceedings ◽

10.1557/proc-201-313 ◽

1990 ◽

Vol 201 ◽

Author(s):

Kevin M. Hubbard ◽

Nicole Bordes ◽

Michael Nastasi ◽

Joseph R. Tesmer

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Thin Films ◽

Scanning Electron Microscopy ◽

Ion Implantation ◽

Normal State ◽

Ion Beam ◽

X Ray Diffraction ◽

X Ray ◽

Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

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In situ X-ray diffraction studies on the piezoelectric response of PZT thin films

Thin Solid Films ◽

10.1016/j.tsf.2016.01.045 ◽

2016 ◽

Vol 603 ◽

pp. 29-33 ◽

Cited By ~ 7

Author(s):

A. Davydok ◽

T.W. Cornelius ◽

C. Mocuta ◽

E.C. Lima ◽

E.B. Araujo ◽

...

Keyword(s):

Thin Films ◽

Piezoelectric Response ◽

X Ray Diffraction ◽

Pzt Thin Films ◽

X Ray

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Degradation of the piezoelectric response of sputtered c-axis AlN thin films with traces of non-(0002) x-ray diffraction peaks

Applied Physics Letters ◽

10.1063/1.2191425 ◽

2006 ◽

Vol 88 (16) ◽

pp. 161915 ◽

Cited By ~ 65

Author(s):

A. Sanz-Hervás ◽

M. Clement ◽

E. Iborra ◽

L. Vergara ◽

J. Olivares ◽

...

Keyword(s):

Thin Films ◽

Piezoelectric Response ◽

X Ray Diffraction ◽

X Ray ◽

Diffraction Peaks

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Synthesis, characterizations and ions implantation into Er doped Aluminum Nitride thin films

10.21203/rs.3.rs-462830/v1 ◽

2021 ◽

Author(s):

Asmat Ullah ◽

Muhammad Usman ◽

Muhammad Maqbool

Keyword(s):

Thin Films ◽

Aluminum Nitride ◽

Relative Concentration ◽

Energy Levels ◽

X Ray Diffraction ◽

X Ray ◽

Ions Implantation ◽

Before And After ◽

Er Doped ◽

Proton Dose

Abstract Er doped Aluminum Nitride (AlN) thin films were prepared using magnetron sputtering technique in a Nitrogen (N) atmosphere on a Silicon substrate. The samples were annealed at a temperature of 900 0C. The fabricated specimen was irradiated with proton dose of 1×1014 ions/cm2 with incident energy of 335 keV using ions accelerators. The relative concentration, thickness and structural properties of the thin films were determined by Rutherford Backscattering Spectroscopy (RBS) and X-Ray Diffraction (XRD) respectively. Before and after the irradiation the energy levels for their types of bonding existing in our specimens were traced with Fourier Transform Infrared Spectroscopy (FTIR).

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Processing Effects on the Contact Resistance of Ion Beam Sputtered Silver on Highly Oriented C-Axis and A-Axis YBCO Films

MRS Proceedings ◽

10.1557/proc-275-723 ◽

1992 ◽

Vol 275 ◽

Author(s):

M. Narbutovskih ◽

J. Rosner ◽

P. Merchant ◽

R. D. Jacowitz

Keyword(s):

Thin Films ◽

Contact Resistance ◽

Ion Beam ◽

Substrate Surface ◽

Amorphous Layer ◽

X Ray Diffraction ◽

Axis Orientation ◽

Ion Beam Etching ◽

X Ray ◽

Processing Effects

ABSTRACTThis paper reports on the processes used to achieve low resistance silver contacts to YBCO thin films that have either c-axis or a-axis orientation. Characterization by x-ray diffraction and TEM verified that these films are highly oriented with either the a or the c axis oriented perpendicular to the substrate surface. TEM examination of some of the Ag/YBCO interfaces reveals the presence of an amorphous layer. We will describe the effects of ion beam etching and RTA alloying on the contact resistivity for both orientations.

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Preparation of TiFe thin Films by Pulsed Ion Beam Evaporation

MRS Proceedings ◽

10.1557/proc-697-p5.17 ◽

2001 ◽

Vol 697 ◽

Cited By ~ 1

Author(s):

Hisayuki Suematsu ◽

Tsuyoshi Saikusa ◽

Tsuneo Suzuki ◽

Weihua Jiang ◽

Kiyoshi Yatsui

Keyword(s):

Thin Film ◽

Thin Films ◽

Pulse Width ◽

Ion Beam ◽

Soda Lime ◽

Soda Lime Glass ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

A Current

AbstractThin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at 1 MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 m m.

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