Large current ion beam polishing and characterization of mechanically finished titanium alloy (Ti6Al4V) surface

In this study, phosphocalcic coatings on titanium alloy Ti6Al4V substrate are elaborated using Electrodeposition (ELD) by adding optimized amount of hydrogen peroxide H2O2 into the electrolyte. Structural analysis is performed by X Rays Diffraction and the data are treated using the RIETVELD method. The characterization of the coatings elaborated by ELD showed that the H2O2 amount variation has an influence on the morphology, the crystal size and the chemical composition (monophasic or biphasic) of the coatings.

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Characterization of Titanium Alloy Ti6Al4V-ELI Components made by Laser Powder Bed Fusion Route for Space Applications

Transactions of the Indian National Academy of Engineering ◽

10.1007/s41403-021-00254-7 ◽

2021 ◽

Author(s):

P. I. Pradeep ◽

A. Akhilesh ◽

V. Anil Kumar ◽

P. Manikandan ◽

K. Naresh Kumar ◽

...

Keyword(s):

Titanium Alloy ◽

Powder Bed Fusion ◽

Laser Powder Bed Fusion ◽

Space Applications ◽

Powder Bed ◽

Titanium Alloy Ti6al4v

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Characterization of Titanium Alloy (Ti6Al4V) Obtained by Additive Manufacturing

10.4271/2019-36-0112 ◽

2020 ◽

Author(s):

Tiago Sartor ◽

Jorge Vicente Lopes Da Silva ◽

Reyolando Lopes Rebello Da Fonseca Brasil ◽

Rafael Celeghini Santiago

Keyword(s):

Titanium Alloy ◽

Additive Manufacturing ◽

Titanium Alloy Ti6al4v

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Microstructural characterization of titanium alloy Ti6Al4V thermally oxidized/Caracterización microestructural de la aleación de titanio Ti6Al4V oxidada térmicamente

Prospectiva ◽

10.15665/rp.v16i2.1617 ◽

2018 ◽

Vol 16 (2) ◽

pp. 68-74

Author(s):

Ma. Mercedes Cely Bautista ◽

Javier Jaramillo Colpas ◽

Ivan Romero Mejía ◽

Oscar Pinilla Navarro ◽

Andres Siado Guillen

Keyword(s):

Titanium Alloy ◽

Microstructural Characterization ◽

Titanium Alloy Ti6al4v

El objetivo de este artículo es analizar el efecto de la oxidación térmica en el cambio microestructural de propiedades mecánicas de la aleación Ti6Al4V. Las muestras de titanio fueron sometidas a tratamiento de oxidación térmica entre 450°C y 850°C por espacio de 2 horas y enfriamiento lento. La morfología superficial fue analizada mediante Microscopía óptica, Microscopía electrónica de barrido, Difracción de rayos X y Análisis de dureza. Con la oxidación térmica se generó una película de óxido tipo TiO2, la cual incrementó su espesor con la temperatura, de igual forma con este aumento de temperatura la dureza del material aumentó en un 40% a 850°C con respecto al material sin tratamiento. Los resultados además mostraron que a partir de 800°C ya se muestra en su totalidad estructuras de rutilo en la superficie de las muestras.

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Preparation and characterization of thin films of carbon nitride

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100136891 ◽

1995 ◽

Vol 53 ◽

pp. 104-105

Author(s):

L. Wan ◽

R. F. Egerton

Keyword(s):

Carbon Nitride ◽

Arc Discharge ◽

Ion Beam ◽

Chemical Vapor ◽

Reactive Sputtering ◽

Vacuum Arc ◽

Specimen Preparation ◽

Bonding Structure ◽

Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

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Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2009p0081 ◽

2009 ◽

Author(s):

E. Hendarto ◽

S.L. Toh ◽

J. Sudijono ◽

P.K. Tan ◽

H. Tan ◽

...

Keyword(s):

Electron Microscope ◽

Focused Ion Beam ◽

Failure Modes ◽

Ion Beam ◽

Electrical Characterization ◽

Nickel Silicide ◽

Fault Isolation ◽

Technology Nodes ◽

Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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Physical Failure Analysis Techniques for Front-End-of-Line Defect Analysis

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0182 ◽

2016 ◽

Author(s):

Dirk Doyle ◽

Lawrence Benedict ◽

Fritz Christian Awitan

Keyword(s):

Cross Section ◽

Focused Ion Beam ◽

Ion Beam ◽

Gate Oxide ◽

Top Down ◽

New Techniques ◽

First Case ◽

Transmission Electron ◽

Scanning Transmission

Abstract Novel techniques to expose substrate-level defects are presented in this paper. New techniques such as inter-layer dielectric (ILD) thinning, high keV imaging, and XeF2 poly etch overflow are introduced. We describe these techniques as applied to two different defects types at FEOL. In the first case, by using ILD thinning and high keV imaging, coupled with focused ion beam (FIB) cross section and scanning transmission electron microscopy (STEM,) we were able to judge where to sample for TEM from a top down perspective while simultaneously providing the top down images giving both perspectives on the same sample. In the second case we show retention of the poly Si short after removal of CoSi2 formation on poly. Removal of the CoSi2 exposes the poly Si such that we can utilize XeF2 to remove poly without damaging gate oxide to reveal pinhole defects in the gate oxide. Overall, using these techniques have led to 1) increased chances of successfully finding the defects, 2) better characterization of the defects by having a planar view perspective and 3) reduced time in localizing defects compared to performing cross section alone.

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