Interface reactivity of in-situ formed LiCoO2 - PEO solid-state interfaces investigated by X-ray photoelectron spectroscopy: Reaction products, energy level offsets and double layer formation

2022 ◽  
Vol 571 ◽  
pp. 151218
Author(s):  
Thimo H. Ferber ◽  
Şahin Cangaz ◽  
Wolfram Jaegermann ◽  
René Hausbrand
Keyword(s):  
Solid State ◽  
Energy Level ◽  
Double Layer ◽  
Photoelectron Spectroscopy ◽  
Layer Formation ◽  
Reaction Products ◽  
X Ray

In Situ Hard X-ray Photoelectron Spectroscopy of Space Charge Layer in a ZnO-Based All-Solid-State Electric Double-Layer Transistor

2019 ◽  
Vol 123 (16) ◽  
pp. 10487-10493 ◽  
Author(s):  
Takashi Tsuchiya ◽  
Yaomi Itoh ◽  
Yoshikazu Yamaoka ◽  
Shigenori Ueda ◽  
Yukihiro Kaneko ◽  
...  
Keyword(s):  
Solid State ◽  
Space Charge ◽  
Double Layer ◽  
Photoelectron Spectroscopy ◽  
Electric Double Layer ◽  
Space Charge Layer ◽  
X Ray ◽  
Charge Layer

scholarly journals In situ investigation of dissociation and migration phenomena at the Pt/electrolyte interface of an electrochemical cell

2015 ◽  
Vol 6 (10) ◽  
pp. 5635-5642 ◽  
Author(s):  
Yeuk Ting Law ◽  
Spyridon Zafeiratos ◽  
Stylianos G. Neophytides ◽  
Alin Orfanidi ◽  
Dominique Costa ◽  
...  
Keyword(s):  
Double Layer ◽  
Photoelectron Spectroscopy ◽  
Electrochemical Cell ◽  
Ambient Pressure ◽  
Liquid Electrolyte ◽  
X Ray ◽  
Electrolyte Interface ◽  
In Situ Investigation ◽  
And Migration

Using near ambient pressure X-ray photoelectron spectroscopy we probe in situ the double layer at the Pt/liquid electrolyte interface.

Surface Processes in Laser-Induced Etching of Silicon Studied by X-Ray Photoelectron Spectroscopy

1986 ◽  
Vol 75 ◽  
Author(s):  
Masataka Hirose ◽  
Tsuyoshi Ogura
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surface ◽  
Valence Electron ◽  
Surface Region ◽  
Reaction Products ◽  
X Ray ◽  
Photochemical Etching ◽  
Arf Excimer Laser ◽  
Laser Induced Etching

AbstractA silicon surface exposed to NF3 gas was irradiated with an ArF excimer laser beam. The reaction products on the surface and their chemical bonding features were studied by in-situ x-ray photoelectron spectroscopy at each step of the photochemical etching. It was found that SiFX (1≤X≤4) units and molecular fluorine exist in the reacting surface region. The surface Si-Si bonds attacked with fluorine are progressively fluorinated and the final surface products are mainly SiF4 and SiF3. A possible mechanism of fluorine etching is discussed on the basis of a valence electron transfer (VET) model.

Gas-Surface Reaction Studies Relevant to SiC Chemical Vapor Deposition

1988 ◽  
Vol 131 ◽  
Author(s):  
C. D. Stinespring ◽  
A. Freedman ◽  
J. C. Wormhoudt
Keyword(s):  
Solid State ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Transport Process ◽  
Surface Reaction ◽  
Chemical Vapor ◽  
Nucleation Mechanism ◽  
Reaction Products ◽  
X Ray ◽  
Insight Into

ABSTRACTReactions of C2H4, C3H8, and CH4 on Si(111) and C2H4 on Si(100) have been investigated for surface temperatures in the range of 1062 K to 1495 K. These studies used x-ray photoelectron spectroscopy to identify the reaction products, characterize the solid state transport process, determine the nucleation mechanism and growth kinetics, and assess orienta-tion effects. The results are used to provide insight into the mechanisms of SiC CVD processes.

scholarly journals Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4189
Author(s):  
R. Lewandków ◽  
P. Mazur ◽  
A. Trembułowicz ◽  
A. Sabik ◽  
R. Wasielewski ◽  
...  
Keyword(s):  
Energy Level ◽  
Photoelectron Spectroscopy ◽  
Valence Band Maximum ◽  
Graphite Layer ◽  
Band Maximum ◽  
X Ray ◽  
Mgo Layers ◽  
Uv Photoelectron Spectroscopy ◽  
Potential Use

This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the MgO layers were obtained by a reactive evaporation method. Graphite layers terminating the SiC(0001) surface were formed by thermal annealing in UHV. The physicochemical properties of the deposited MgO layers and the systems formed with their participation were determined using X-ray and UV photoelectron spectroscopy (XPS, UPS). The results confirmed the formation of MgO compounds. Energy level diagrams were constructed for both systems. The valence band maximum of MgO layers was embedded deeper on the graphitized surface than on the SiC(0001).

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