Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

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Improvement of reverse leakage current characteristics of GaSb and Al0.3Ga0.7Sb/GaSb diodes grown by MBE

Solid-State Electronics ◽

10.1016/0038-1101(94)90167-8 ◽

1994 ◽

Vol 37 (8) ◽

pp. 1567-1569 ◽

Cited By ~ 4

Author(s):

Mitsuru Kodama

Keyword(s):

Leakage Current ◽

Reverse Leakage Current ◽

Current Characteristics

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Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes

Journal of Wuhan University of Technology-Mater Sci Ed ◽

10.1007/s11595-021-2432-8 ◽

2021 ◽

Vol 36 (4) ◽

pp. 472-477

Author(s):

Xinli Sun ◽

Hui Guo ◽

Yuming Zhang ◽

Bingjian Guo ◽

Xingpeng Li ◽

...

Keyword(s):

Leakage Current ◽

Oxygen Concentration ◽

Monocrystalline Silicon ◽

Reverse Leakage Current

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Conduction mechanisms of the reverse leakage current of 4H-SiC Schottky barrier diodes

Semiconductor Science and Technology ◽

10.1088/1361-6641/aaf8cb ◽

2019 ◽

Vol 34 (2) ◽

pp. 025016 ◽

Cited By ~ 3

Author(s):

A Latreche

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Schottky Barrier Diodes ◽

Reverse Leakage Current ◽

Conduction Mechanisms

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Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.881 ◽

2013 ◽

Vol 740-742 ◽

pp. 881-886 ◽

Cited By ~ 8

Author(s):

Hiroyuki Okino ◽

Norifumi Kameshiro ◽

Kumiko Konishi ◽

Naomi Inada ◽

Kazuhiro Mochizuki ◽

...

Keyword(s):

Electric Field ◽

Schottky Barrier ◽

Leakage Current ◽

Reverse Current ◽

Tunneling Current ◽

Leakage Currents ◽

Reverse Leakage Current ◽

Low Leakage ◽

Chip Size ◽

Barrier Metal

The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

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