Optimization of C/N and current density in a heterotrophic/biofilm-electrode autotrophic denitrification reactor (HAD-BER)

This paper reports an exploratory study on the use of a sulfite-rich industrial effluent to enable the integration of a sulfite–sulfide–sulfate cycle to the conventional carbon and nitrogen cycles in wastewater treatment to achieve sludge minimization through the non-sludge-producing Sulfate reduction, Autotrophic denitriﬁcation and Nitriﬁcation Integrated (SANI) process. A laboratory-scale sulfite reduction reactor was set up for treating sulfite-rich synthetic wastewater simulating the wastewater from industrial flue gas desulfurization (FGD) units. The results indicated that the sulfite reduction reactor can be started up within 11 d, which was much faster than that using sulfate. Thiosulfate was found to be the major sulfite reduction intermediate, accounting for about 30% of the total reduced sulfur in the reactor effluent, which may enable additional footprint reduction of the autotrophic denitrification reactor in the SANI process. This study indicated that it was possible to make use of the FGD effluent for applying the FGD–SANI process in treating freshwater-based sewage.

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Effect of current on biofilm-electrode reactor coupled with sulfur autotrophic denitrification process (BER-SAD) for nitrate removal from wastewater

E3S Web of Conferences ◽

10.1051/e3sconf/202126702021 ◽

2021 ◽

Vol 267 ◽

pp. 02021

Author(s):

Hengyuan Liu ◽

Chenhe Zhang

Keyword(s):

Removal Efficiency ◽

Current Density ◽

Nitrate Removal ◽

Great Influence ◽

Current Intensity ◽

Autotrophic Denitrification ◽

Nitrite Production ◽

Coupled Process ◽

Denitrification Process

The biofilm-electrode reactor coupled with sulfur autotrophic denitrification process (BER-SAD) was used to remove nitrate in groundwater, and the effect of current intensity on the denitrification characteristics of the coupled process was explored. Current intensity had a great influence on the denitrification effect of the coupled process, the maximum nitrate removal efficiency of 99.9% and lowest nitrite production were gained under the optimum current density of 100 mA. Moreover, the accumulation concentration of SO42- increased gradually with the increase of current intensity. With the increase of current intensity, the proportion of hydrogen autotrophic denitrification decreased, while the proportion of sulfur autotrophic denitrification increased.

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Nitrite accumulation in continuous-flow partial autotrophic denitrification reactor using sulfide as electron donor

Bioresource Technology ◽

10.1016/j.biortech.2017.07.030 ◽

2017 ◽

Vol 243 ◽

pp. 1237-1240 ◽

Cited By ~ 30

Author(s):

Chunshuang Liu ◽

Wenfei Li ◽

Xuechen Li ◽

Dongfeng Zhao ◽

Bin Ma ◽

...

Keyword(s):

Electron Donor ◽

Continuous Flow ◽

Nitrite Accumulation ◽

Autotrophic Denitrification ◽

Denitrification Reactor

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Respirometric Monitoring for the Determination of Effective Height and Reaction Rate Constant in Up-Flow Autotrophic Denitrification Reactor Packed with Sulfur

Environmental Monitoring and Assessment ◽

10.1007/s10661-005-1613-9 ◽

2005 ◽

Vol 104 (1-3) ◽

pp. 221-234 ◽

Cited By ~ 4

Author(s):

In S. Kim ◽

Wooshin Park

Keyword(s):

Rate Constant ◽

Reaction Rate ◽

Reaction Rate Constant ◽

Autotrophic Denitrification ◽

Effective Height ◽

Denitrification Reactor

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Study on key influencing factors of magnetic autotrophic denitrification reactor

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/592/1/012095 ◽

2019 ◽

Vol 592 ◽

pp. 012095

Author(s):

Cong Yu ◽

Jiabin Wang ◽

Dong Zhang ◽

Tianhang Li

Keyword(s):

Influencing Factors ◽

Autotrophic Denitrification ◽

Denitrification Reactor

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Activated Prominences; Mechanisms for Activation and Eruption

International Astronomical Union Colloquium ◽

10.1017/s0252921100065714 ◽

1979 ◽

Vol 44 ◽

pp. 307-313

Author(s):

D.S. Spicer

Keyword(s):

Pressure Gradient ◽

Density Gradient ◽

Current Density ◽

Convective Instability ◽

Tearing Mode ◽

Magnetic Shear ◽

Long Wavelength ◽

Ideal Mhd ◽

Gradient Change ◽

Accelerated Particles

A possible relationship between the hot prominence transition sheath, increased internal turbulent and/or helical motion prior to prominence eruption and the prominence eruption (“disparition brusque”) is discussed. The associated darkening of the filament or brightening of the prominence is interpreted as a change in the prominence’s internal pressure gradient which, if of the correct sign, can lead to short wavelength turbulent convection within the prominence. Associated with such a pressure gradient change may be the alteration of the current density gradient within the prominence. Such a change in the current density gradient may also be due to the relative motion of the neighbouring plages thereby increasing the magnetic shear within the prominence, i.e., steepening the current density gradient. Depending on the magnitude of the current density gradient, i.e., magnetic shear, disruption of the prominence can occur by either a long wavelength ideal MHD helical (“kink”) convective instability and/or a long wavelength resistive helical (“kink”) convective instability (tearing mode). The long wavelength ideal MHD helical instability will lead to helical rotation and thus unwinding due to diamagnetic effects and plasma ejections due to convection. The long wavelength resistive helical instability will lead to both unwinding and plasma ejections, but also to accelerated plasma flow, long wavelength magnetic field filamentation, accelerated particles and long wavelength heating internal to the prominence.

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Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100089718 ◽

1991 ◽

Vol 49 ◽

pp. 1080-1081

Author(s):

P. Lu ◽

W. Huang ◽

C.S. Chern ◽

Y.Q. Li ◽

J. Zhao ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Critical Current Density ◽

Critical Current ◽

Current Density ◽

Film Growth ◽

Chemical Vapor ◽

Microstructural Characterization ◽

Ion Milling ◽

Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

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Analytical electron microscopy of grain boundaries in Al-Cu metallizations

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100133059 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1684-1685

Author(s):

J. R. Michael ◽

A. D. Romig ◽

D. R. Frear

Keyword(s):

Electron Microscopy ◽

Integrated Circuits ◽

Failure Mode ◽

Current Density ◽

Thermal History ◽

Analytical Electron Microscopy ◽

Cu Metallization ◽

Analytical Electron ◽

Interconnect Lines

Al with additions of Cu is commonly used as the conductor metallizations for integrated circuits, the Cu being added since it improves resistance to electromigration failure. As linewidths decrease to submicrometer dimensions, the current density carried by the interconnect increases dramatically and the probability of electromigration failure increases. To increase the robustness of the interconnect lines to this failure mode, an understanding of the mechanism by which Cu improves resistance to electromigration is needed. A number of theories have been proposed to account for role of Cu on electromigration behavior and many of the theories are dependent of the elemental Cu distribution in the interconnect line. However, there is an incomplete understanding of the distribution of Cu within the Al interconnect as a function of thermal history. In order to understand the role of Cu in reducing electromigration failures better, it is important to characterize the Cu distribution within the microstructure of the Al-Cu metallization.

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