Solid solid phase change (SSPC) chitosan-g-mPEG fiber with improved mechanical performance via in-situ wet spinning process

2020 ◽  
Vol 240 ◽  
pp. 116313 ◽  
Author(s):  
Da Bao ◽  
Lisha Liu ◽  
Ting Sun ◽  
Ying Han ◽  
Fanliang Meng ◽  
...  
Polymer ◽  
2020 ◽  
Vol 202 ◽  
pp. 122641
Author(s):  
Ho-Sung Yang ◽  
Yong-Min Kim ◽  
Howon Choi ◽  
Jinhyeok Jang ◽  
Ji Ho Youk ◽  
...  

Author(s):  
C. Hayzelden ◽  
J. L. Batstone

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.


2018 ◽  
Author(s):  
Ryohei Gotoh ◽  
Tsuyoshi Totani ◽  
Masashi Wakita ◽  
Harunori Nagata

2020 ◽  
Author(s):  
Gaurav Mahamuni ◽  
Jiayang He ◽  
Jay Rutherford ◽  
Byron Ockerman ◽  
Edmund Seto ◽  
...  

<p>Exposure to combustion generated aerosols such as PM from residential woodburning, forest fires, cigarette smoke, and traffic emission have been linked to adverse health outcomes. It is important to assess the chemical composition of PM to examine personal exposure. Excitation-emission matrix (EEM) spectroscopy has been shown as a sensitive and cost-effective technique for evaluation of combustion PM composition and as a source apportionment tool. However, EEM measurements are hindered by a solvent extraction step and a need for benchtop instrumentation. Here, we present a methodology that eliminates this labor-intensive sample preparation and allows to automate and miniaturize the detection platform. A miniature electrostatic collector deposits PM sample onto transparent polydimethylsiloxane (PDMS) coated substrate, where PAH components are extracted into solid-phase (SP) solvent and analyzed using EEM spectroscopy in-situ. We evaluated external and internal excitation schemes to optimized signal to noise ratio. Analysis of woodsmoke and cigarette smoke samples showed good agreement with liquid extraction EEM spectra. Internal excitation is hindered by fluorescent interference from PDMS at λ<250nm. The external excitation EEM spectra are dependent on the incident angle; ranges of 30-40⁰ and 55-65⁰ showed the best results. The proposed SP-EEM technique can be used for development of miniaturized sensors for chemical analysis of combustion generated PM. </p>


1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.


2021 ◽  
Vol 6 (24) ◽  
pp. 6280-6285
Author(s):  
Burcu Oktay ◽  
Nilhan Kayaman‐Apohan

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