Resistive random access memory characteristics of NiO thin films with an oxygen-deficient NiO0.95 layer

AbstractAdmittance spectroscopy measurement has been performed on NiOx thin films with various oxygen compositions (x=1.0-1.2) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiOx films with low oxygen composition (x≤1.07) are 120-170 meV and lower than 2×1019 cm-3, respectively. From I-V measurement of the Pt/NiOx/Pt structures, samples with high oxygen composition (x≥1.10) did not show resistance switching operation, while samples with low oxygen composition (x≤1.07) did. The best oxygen composition of NiOx thin films turned out to be 1.07 in order to realize repeatable and stable resistance switching operation.

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The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

MRS Proceedings ◽

10.1557/opl.2014.792 ◽

2014 ◽

Vol 1691 ◽

Cited By ~ 1

Author(s):

Ryosuke Ogata ◽

Masataka Yoshihara ◽

Naohiro Murayama ◽

Satoru Kishida ◽

Kentaro Kinoshita

Keyword(s):

Grain Boundary ◽

Room Temperature ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Data Retention ◽

Access Memory ◽

Influence Of Water ◽

Retention Characteristics ◽

Memory Characteristics

ABSTRACTWe focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated. As a result, switching voltages were decreased by supplying water and reset switching was confirmed to be strongly induced by supplying water even at room temperature without applying voltage. These results suggest that water enhances resistive switching effect by providing reducing species and oxidizing species respectively such as H+ and OH-.

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Solution-processed ZnO thin films for low voltage and low temperature application in flexible resistive random access memory

Thin Solid Films ◽

10.1016/j.tsf.2016.09.023 ◽

2016 ◽

Vol 616 ◽

pp. 728-732 ◽

Cited By ~ 1

Author(s):

Hsin-Chiang You ◽

Gong-Kai Lin

Keyword(s):

Thin Films ◽

Low Temperature ◽

Low Voltage ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Zno Thin Films ◽

Access Memory ◽

Solution Processed ◽

Temperature Application

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Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films

Nanoscale ◽

10.1039/c8nr02986e ◽

2018 ◽

Vol 10 (28) ◽

pp. 13443-13448 ◽

Cited By ~ 7

Author(s):

Yoonho Ahn ◽

Hyun Wook Shin ◽

Tae Hoon Lee ◽

Woo-Hee Kim ◽

Jong Yeog Son

Keyword(s):

Thin Films ◽

Bottom Electrode ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Memory Switching ◽

Switching Characteristics

We report the effects of bottom electrode shapes on resistive random-access memory (RRAM) devices composed of Nb (bottom electrode)/NiO (dielectric)/Nb (top electrode) structures.

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