Mist CVD deposited amorphous InSnZnO thin films with different nitrogen/oxygen ratios carrier gases and their applications to thin-film transistors

Author(s):  
Han-Yin Liu ◽  
Yu-Jie Liao ◽  
Hung-Yi Wu
2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.


RSC Advances ◽  
2018 ◽  
Vol 8 (37) ◽  
pp. 20990-20995 ◽  
Author(s):  
Xiang Yang ◽  
Shu Jiang ◽  
Jun Li ◽  
Jian-Hua Zhang ◽  
Xi-Feng Li

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique.


2018 ◽  
Vol 6 (6) ◽  
pp. 1393-1398 ◽  
Author(s):  
Shengbin Nie ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
...  

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs).


RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.


2019 ◽  
Vol 493 ◽  
pp. 63-69 ◽  
Author(s):  
Jin-hua Ren ◽  
Yu-ting Huang ◽  
Kai-wen Li ◽  
Jie Shen ◽  
Wan-yu Zeng ◽  
...  

2006 ◽  
Vol 937 ◽  
Author(s):  
Yutaka Natsume ◽  
Takashi Minakata

ABSTRACTWe have succeeded in developing a simple solution process of pentacene thin films without particular precursor materials. High crystallinity and large plate-like grains of the solution-processed thin films were observed with several analyses. The solution-processed pentacene thin-film transistors (TFTs) were also fabricated and exhibited good transfer characteristics with maximum carrier mobility above 1 cm2/Vs. The solution-processed TFTs also indicated a steep subthreshold swing and high stability of the threshold voltage against the storage in the atmosphere. The trap states and the bulk carrier density in the films were evaluated from the transfer characteristics by using the analytical model. We considered that these good properties could be attributed to the high crystallinity and the large grains of the solution-processed thin films.


2009 ◽  
Vol 21 (4) ◽  
pp. 604-611 ◽  
Author(s):  
Jong-Baek Seon ◽  
Sangyoon Lee ◽  
Jong Min Kim ◽  
Hyun-Dam Jeong

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