Nanostructuring enforced sandwich-tubular CNT-Cu interconnects

2021 ◽  
Vol 278 ◽  
pp. 114705
Author(s):  
Pengjie Wang ◽  
Qiang Cao ◽  
Yucheng Lan ◽  
Hanxing Zhu ◽  
Sheng Liu ◽  
...  
Keyword(s):  
Cu Interconnects

scholarly journals Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Myungwoo Son ◽  
Jaewon Jang ◽  
Yongsu Lee ◽  
Jungtae Nam ◽  
Jun Yeon Hwang ◽  
...  
Keyword(s):  
High Performance ◽  
Direct Synthesis ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Time To Failure ◽  
Practical Applications ◽  
Cu Interconnects ◽  
Pressure Chemical ◽  
Cu Interconnect ◽  
Pure Cu

AbstractHere, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >106 s at 100 °C under a continuous DC stress of 3 MA cm−2. Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).

Electromigration failure mode concerning negative resistance shift of Cu interconnects buried in porous low-k dielectric

2017 ◽  
Vol 110 (8) ◽  
pp. 083502 ◽  
Author(s):  
Hui Zheng ◽  
Binfeng Yin ◽  
Hewei Yu ◽  
Leigang Chen ◽  
Lin Gao ◽  
...  
Keyword(s):  
Failure Mode ◽  
Negative Resistance ◽  
Cu Interconnects ◽  
Low K

Damageless Cu chemical mechanical polishing for porous SiOC/Cu interconnects

2007 ◽  
Vol 84 (11) ◽  
pp. 2615-2619 ◽  
Author(s):  
Seiichi Kondo ◽  
Kouichi Fukaya ◽  
Kouji Yamada ◽  
Tadakazu Miyazaki ◽  
Masahisa Fujita ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Cu Interconnects

scholarly journals Electromigration-Induced Plastic Deformation in Cu Interconnects: Effects on Current Density Exponent, n, and Implications for EM Reliability Assessment

2010 ◽  
Vol 39 (11) ◽  
pp. 2483-2488 ◽  
Author(s):  
A.S. Budiman ◽  
C.S. Hau-Riege ◽  
W.C. Baek ◽  
C. Lor ◽  
A. Huang ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Current Density ◽  
Reliability Assessment ◽  
Cu Interconnects

Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects

2002 ◽  
Author(s):  
J. Noguchi ◽  
T. Saito ◽  
N. Ohashi ◽  
H. Ashihara ◽  
H. Maruyama ◽  
...  
Keyword(s):  
Cu Interconnects ◽  
Low K

(Invited) Innovations to Enable Extension of Cu Interconnects and Shift to Alternative Conductor

2021 ◽  
Vol MA2021-01 (30) ◽  
pp. 1003-1003
Author(s):  
Takeshi Nogami
Keyword(s):  
Cu Interconnects
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