Dynamic triaxial compressive response and failure mechanism of basalt fibre-reinforced coral concrete

2021 ◽  
Vol 156 ◽  
pp. 103930
Author(s):  
Qiang Fu ◽  
Mengxin Bu ◽  
Li Su ◽  
Bingbing Guo ◽  
Lou Chen ◽  
...  
Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4143
Author(s):  
Jie Xiao ◽  
Han Shi ◽  
Lei Tao ◽  
Liangliang Qi ◽  
Wei Min ◽  
...  

Filament-wound composite tubular structures are frequently used in transmission systems, pressure vessels, and sports equipment. In this study, the failure mechanism of composite tubes reinforced with different fibres under low-velocity impact (LVI) and the radial residual compression performance of the impacted composite tubes were investigated. Four fibres, including carbon fiber-T800, carbon fiber-T700, basalt fibre, and glass fibre, were used to fabricate the composite tubes by the winding process. The internal matrix/fibre interface of the composite tubes before the LVI and their failure mechanism after the LVI were investigated by scanning electric microscopy and X-ray micro-computed tomography, respectively. The results showed that the composite tubes mainly fractured through the delamination and fibre breakage damage under the impact of 15 J energy. Delamination and localized fibre breakage occur in the glass fibre-reinforced composite (GFRP) and basalt fibre-reinforced composite (BFRP) tubes when subjected to LVI. While fibre breakage damage occurs globally in the carbon fibre-reinforced composite (CFRP) tubes. The GFRP tube showed the best impact resistance among all the tubes investigated. The basalt fibre-reinforced composite (BFRP) tube exhibited the lowest structural impact resistance. The impact resistance of the CFRP-T700 and CFRP-T800 tube differed slightly. The radial residual compression strength (R-RCS) of the BFRP tube is not sensitive to the impact, while that of the GFRP tube is shown to be highly sensitive to the impact.


Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


2008 ◽  
Vol 11 (-1) ◽  
pp. 188-201 ◽  
Author(s):  
Piotr Bogacz ◽  
Jarosława Kaczmarek ◽  
Danuta Leśniewska

2013 ◽  
Vol 27 (3) ◽  
pp. 239-246 ◽  
Author(s):  
A.E. Ajayi ◽  
M.S. Dias Junior ◽  
N. Curi ◽  
I. Oladipo

Abstract This study aimed to investigate the mineralogy, moisture retention, and the compressive response of two agricultural soils from South West Nigeria. Undisturbed soil cores at the A and B horizons were collected and used in chemical and hydrophysical characterization and confined compression test. X-ray diffractograms of oriented fine clay fractions were also obtained. Our results indicate the prevalence of kaolinite minerals relating to the weathering process in these tropical soils. Moisture retention by the core samples was typically low with pre-compression stress values ranging from50 to 300 kPa at both sites. Analyses of the shape of the compression curves highlight the influence of soil moisture in shifts from the bi-linear to S-shaped models. Statistical homogeneity test of the load bearing capacity parameters showed that the soil mineralogy influences the response to loading by these soils. These observations provide a physical basis for the previous classification series of the soils in the studied area. We showed that the internal strength attributes of the soil could be inferred from the mineralogical properties and stress history. This could assist in decisions on sustainable mechanization in a datapoor environment.


Author(s):  
William Ng ◽  
Kevin Weaver ◽  
Zachary Gemmill ◽  
Herve Deslandes ◽  
Rudolf Schlangen

Abstract This paper demonstrates the use of a real time lock-in thermography (LIT) system to non-destructively characterize thermal events prior to the failing of an integrated circuit (IC) device. A case study using a packaged IC mounted on printed circuit board (PCB) is presented. The result validated the failing model by observing the thermal signature on the package. Subsequent analysis from the backside of the IC identified a hot spot in internal circuitry sensitive to varying value of external discrete component (inductor) on PCB.


Author(s):  
Sarven Ipek ◽  
David Grosjean

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.


Author(s):  
John Butchko ◽  
Bruce T. Gillette

Abstract Autoclave Stress failures were encountered at the 96 hour read during transistor reliability testing. A unique metal corrosion mechanism was found during the failure analysis, which was creating a contamination path to the drain source junction, resulting in high Idss and Igss leakage. The Al(Si) top metal was oxidizing along the grain boundaries at a faster rate than at the surface. There was subsurface blistering of the Al(Si), along with the grain boundary corrosion. This blistering was creating a contamination path from the package to the Si surface. Several variations in the metal stack were evaluated to better understand the cause of the failures and to provide a process solution. The prevention of intergranular metal corrosion and subsurface blistering during autoclave testing required a materials change from Al(Si) to Al(Si)(Cu). This change resulted in a reduced corrosion rate and consequently prevented Si contamination due to blistering. The process change resulted in a successful pass through the autoclave testing.


Author(s):  
Mark Morris ◽  
James Mohr ◽  
Esteban Ortiz ◽  
Steven Englebretson

Abstract Determination of metal bridging failures on plastic encapsulated devices is difficult due to the metal etching effects that occur while removing many of the plastic mold compounds. Typically, the acids used to remove the encapsulation are corrosive to the metals that are found within the device. Thus, decapsulation can result in removal of the failure mechanism. Mechanical techniques are often not successful due to damage that results in destruction of the die and failure mechanism. This paper discusses a novel approach to these types of failures using a silicon etch and a backside evaluation. The desirable characteristics of the technique would be to remove the silicon and leave typical device metals unaffected. It would also be preferable that the device passivation and oxides not be etched so that the failure location is not disturbed. The use of Tetramethylammonium Hydroxide (TMAH), was found to fit these prerequisites. The technique was tested on clip attached Schottky diodes that exhibited resistive shorting. The use of the TMAH technique was successful at exposing thin solder bridges that extruded over the edge of the die resulting in failure.


Author(s):  
Hide Murayama ◽  
Makoto Yamazaki ◽  
Shigeru Nakajima

Abstract Power bipolar devices with gold metallization experience high failure rates. The failures are characterized as shorts, detected during LSI testing at burn-in. Many of these shorted locations are the same for the failed devices. From a statistical lot analysis, it is found that the short failure rate is higher for devices with thinner interlayer dielectric films. Based upon these results, a new electromigration and electrochemical reaction mixed failure mechanism is proposed for the failure.


Author(s):  
Alan Kennen ◽  
John F. Guravage ◽  
Lauren Foster ◽  
John Kornblum

Abstract Rapidly changing technology highlights the necessity of developing new failure analysis methodologies. This paper will discuss the combination of two techniques, Design for Test (DFT) and Focused Ion Beam (FIB) analysis, as a means for successfully isolating and identifying a series of high impedance failure sites in a 0.35 μm CMOS design. Although DFT was designed for production testing, the failure mechanism discussed in this paper may not have been isolated without this technique. The device of interest is a mixed signal integrated circuit that provides a digital up-convert function and quadrature modulation. The majority of the circuit functions are digital and as such the majority of the die area is digital. For this analysis, Built In Self Test (BIST) circuitry, an evaluation board for bench testing and FIB techniques were used to successfully identify an unusual failure mechanism. Samples were subjected to Highly Accelerated Stress Test (HAST) as part of the device qualification effort. Post-HAST electrical testing at 200MHz indicated that two units were non-functional. Several different functional blocks on the chip failed electrical testing. One part of the circuitry that failed was the serial interface. The failure analysis team decided to look at the serial interface failure mode first because of the simplicity of the test. After thorough analysis the FA team discovered increasing the data setup time at the serial port input allowed the device to work properly. SEM and FIB techniques were performed which identified a high impedance connection between a metal layer and the underlying via layer. The circuit was modified using a FIB edit, after which all vectors were read back correctly, without the additional set-up time.


Sign in / Sign up

Export Citation Format

Share Document