Luminescence and energy transfer properties of Gd2P4O13:Tm3+, Dy3+ phosphor with UV light excitation

Optik ◽  
2018 ◽  
Vol 175 ◽  
pp. 304-311
Author(s):  
Jiyou Wang ◽  
Xiang Xiang Liu ◽  
Yue Liu ◽  
Hongmei Liu ◽  
Jin Xiang Deng
Keyword(s):  
Energy Transfer ◽  
Uv Light ◽  
Light Excitation ◽  
Transfer Properties

Photoluminescence and Energy Transfer of Ce3+ and Tb3+ Co-Doped Ba5(PO4)3Cl Phosphor for Light-Emitting Diodes

2013 ◽  
Vol 401-403 ◽  
pp. 796-799 ◽  
Author(s):  
Jia Yue Sun ◽  
Dian Peng Cui ◽  
Bing Xue ◽  
Guang Chao Sun
Keyword(s):  
Energy Transfer ◽  
Single Phase ◽  
Uv Light ◽  
Green Light ◽  
Emission Spectra ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Effective Energy Transfer ◽  
Light Excitation

Single-phase Ba5(PO4)3Cl:Ce3+,Tb3+ (BPCl:Ce3+,Tb3+) samples have been synthesized via solid-state reaction method. The phase structure and luminescence properties are characterized using powder X-ray diffraction (XRD), photoluminescence excitation and emission spectra. Effective energy transfer occurs from Ce3+ to Tb3+ due to the observed spectral overlap between the emission band of Ce3+ and the excitation band of Tb3+. Ce3+/Tb3+-codoped Ba5(PO4)3Cl shows more intense yellowish-green light compared to that of Tb3+-doped sample under UV light excitation.

Eu2+ → Tb3+ → Eu3+ energy transfer in Ca6La2Na2(PO4)6F2:Eu, Tb phosphors

RSC Advances ◽  
2016 ◽  
Vol 6 (40) ◽  
pp. 33990-33997 ◽  
Author(s):  
Mubiao Xie ◽  
Guoxian Zhu ◽  
Dongyu Li ◽  
Rongkai Pan ◽  
Xionghui Fu
Keyword(s):  
Energy Transfer ◽  
Uv Light ◽  
Color Gamut ◽  
Light Excitation ◽  
Tunable Emission

Eu2+ → Tb3+ → Eu3+ energy transfer exist in CLPF host, and tunable emission with a large color gamut can be obtained under n-UV light excitation.

Photoluminescence and Energy Transfer from Sm3+ to Eu3+ in Na3YSi2O7 Phosphor for Light-Emitting Diodes

2014 ◽  
Vol 597 ◽  
pp. 117-120 ◽  
Author(s):  
Jia Yue Sun ◽  
Dian Peng Cui ◽  
Qiu Mei Di ◽  
Qi Guang Xu ◽  
Liu Han
Keyword(s):  
Energy Transfer ◽  
Uv Light ◽  
Red Light ◽  
Emission Spectra ◽  
X Ray Diffraction ◽  
Solid State Reaction Technique ◽  
Light Emitting ◽  
X Ray ◽  
Effective Energy Transfer ◽  
Light Excitation

A series of Na3YSi2O7: Eu3+, Sm3+ samples have been synthesized via solid-state reaction technique. The phase structure and luminescence properties are characterized using powder X-ray diffraction, photoluminescence excitation and emission spectra. Effective energy transfer occurs from Sm3+ to Eu3+ and Sm3+/Eu3+-codoped Na3YSi2O7 shows more intense red light compared to that of Eu3+-doped sample under UV light excitation.

Trapping and Luminescence Mechanism Studies in SrS:Eu2+, Sm3+ Thin Films at Various Temperatures

1992 ◽  
Vol 281 ◽  
Author(s):  
Susan Z. Hua ◽  
L. Salamanca-Riba ◽  
M. Wuttig ◽  
P. K. Soltani
Keyword(s):  
Thin Films ◽  
Energy Transfer ◽  
Excitation Energy ◽  
Uv Light ◽  
Electronic Transitions ◽  
Energy Bands ◽  
Excitation Energies ◽  
Light Excitation ◽  
Direct Inter ◽  
Transfer Mechanisms

ABSTRACTThe temperature dependence of photoluminescence in SrS singly and doubly doped with Eu2+, Sm3+ was studied with different excitation energies. Different energy transfer mechanisms, namely, phonon-assisted energy transfer and electron transfer through energy bands, depending on the excitation energy, are proposed to take place in SrS:Eu2+, Sm3+ thin films. We estimate that under UV light excitation 10% of Eu2+ emission originates from electronic transitions between Eu2+ and Sm3+ through the conduction and valance bands. In contrast, direct inter-ionic transitions take place for 2.84 eV excitation energy via a phonon assistance mechanism.

Realizing near-UV light excitation of Mn2+ via efficient energy transfer from Eu2+ for white LEDs

2020 ◽  
Vol 125 ◽  
pp. 110789
Author(s):  
Quan Dong ◽  
Jiaojie Yang ◽  
Shengan He ◽  
Jun Cui ◽  
Fengli Yang ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Uv Light ◽  
Efficient Energy Transfer ◽  
White Leds ◽  
Efficient Energy ◽  
Light Excitation

Highly efficient green-emitting phosphor Sr4Al14O25:Ce,Tb with low thermal quenching and wide color gamut upon UV-light excitation for backlighting display applications

2020 ◽  
Author(s):  
Haoran Li ◽  
Yujun Liang ◽  
Shiqi Liu ◽  
Weilun Zhang ◽  
Yanying Bi ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Uv Light ◽  
Thermal Quenching ◽  
High Response ◽  
Color Gamut ◽  
Ultraviolet Excitation ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Wide Color Gamut ◽  
Light Excitation

Highly-efficient and stable inorganic phosphors with high response to near-ultraviolet excitation are essential to the performance enhancement of the phosphor converted backlighting devices. Herein, highly-efficient green-emitting phosphors Sr4Al14O25:Ce,Tb (SAO:Ce3+,Tb3+) with...

ROOM TEMPERATURE PHOTOLUMINESCENCE OF POLYCRYSTALLINE SIC PREPARED FROM CARBON-SATURATED SI MELT

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1047-1051
Author(s):  
JIANPING MA ◽  
ZHIMING CHEN ◽  
GANG LU ◽  
MINGBIN YU ◽  
LIANMAO HANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Uv Light ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Composition And Structure ◽  
Light Excitation ◽  
Scanning Electron

Intense photoluminescence (PL) has been observed at room temperature from the polycrystalline SiC samples prepared from carbon-saturated Si melt at a temperature ranging from 1500 to 1650°C. Composition and structure of the samples have been confirmed by means of X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. PL measurements with 325 nm UV light excitation revealed that the room temperature PL spectrum of the samples consists of 3 luminescent bands, the peak energies of which are 2.38 eV, 2.77 eV and 3.06 eV, respectively. The 2.38 eV band is much stronger than the others. It is suggested that some extrinsic PL mechanisms associated with defect or interface states would be responsible to the intensive PL observed at room temperature.

Syntheses, crystal structures and photoluminescence properties of two rare-earth molybdates CsLn(MoO4)2 (Ln=Eu, Tb)

2018 ◽  
Vol 233 (2) ◽  
pp. 73-79 ◽  
Author(s):  
Dan Zhao ◽  
Fa-Xue Ma ◽  
Bao-Zhong Liu ◽  
Yun-Chang Fan ◽  
Xue-Feng Han ◽  
...  
Keyword(s):  
Rare Earth ◽  
Uv Light ◽  
Layer Structure ◽  
Green Emission ◽  
Salt Flux ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
Orthorhombic Space Group ◽  
Light Excitation ◽  
Rare Earth Molybdates

AbstractSingle crystals of two cesium rare-earth molybdates CsLn(MoO4)2(Ln=Eu, Tb) have been prepared using the high temperature molten salt (flux) method. Single-crystal X-ray diffraction analyses reveal that they crystallize in the orthorhombic space groupPccm(No. 49) and features a 2D layer structure that is composed of [Ln(MoO4)2]∞and [Cs]∞layers. Under near-UV light excitation, emission spectrum of CsEu(MoO4)2consists of several sharp lines due to the characteristic electronic transitions of Eu3+ions, whereas CsTb(MoO4)2exhibits characteristic green emission of Tb3+ions.

Evaluation of the Effect of Ultraviolet Light Excitation during Characterization of Silicon Carbide Epitaxial Layers

2018 ◽  
Vol 924 ◽  
pp. 261-264
Author(s):  
Hrishikesh Das ◽  
Swapna Sunkari ◽  
Oener Akdik ◽  
Andrei Konstantinov ◽  
Krister Gumaelius ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ultraviolet Light ◽  
Defect Detection ◽  
Uv Light ◽  
Surface Treatments ◽  
Uv Laser ◽  
Original State ◽  
Optimal Surface ◽  
Light Excitation

The scanning of Silicon Carbide (SiC) epitaxy wafers for defects by ultraviolet (UV) laser or lamps is widely prevalent. In this work, we document the effects of UV light excitation on the SiC epitaxy material. An increase in background photoluminescence (PL) is observed after repeated scans. The effect of this increase on defect detection is shown. Optimal surface treatments to recover the material back to the original state are demonstrated. Further, some surface treatments are proposed which reduce the effect of the UV light excitation and prevent to a large extent the rise in background PL.

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