Microstructural characterization of a V2C and V8C7 ceramic-reinforced Fe substrate surface compound layer by EBSD and TEM

AbstractIn this contribution the cosegregation-induced epitaxial growth of two- and three-dimensional chromium nitrides on ferritic Fe-15%Cr-N(100) (CN = 30 wt-ppm) single crystal surfaces will be discussed. The two-dimensional CrN surface compound is stable between 600 and 720°C. From the (1 × 1) LEED pattern it is inferred that the surface compound is epitaxial to the bcc(100) alloy surface. XPD and LEED-IV investigations have revealed that this surface compound consists of a single CrN compound layer plus an additional subsurface chromium layer with a huge interlayer expansion between both layers. The CrN surface precipitate formed at temperatures T < 600°C is also epitaxially arranged on the bcc(100) substrate surface. Its structure corresponds to the rocksalt structure, i.e. the structure of the well-known bulk CrN. Starting from a sputter cleaned alloy surface the growth of the epitaxial CrN surface precipitate proceeds via the two-dimensional CrN surface nitride. After completion of this two-dimensional CrN layer the nucleation and growth of the three-dimensional CrN surface precipitate takes place.

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Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088129 ◽

1991 ◽

Vol 49 ◽

pp. 762-763

Author(s):

M.A. Parker ◽

K.E. Johnson ◽

C. Hwang ◽

A. Bermea

Keyword(s):

Magnetic Recording ◽

Electron Probe ◽

Microstructural Characterization ◽

Crystallographic Structure ◽

Recording Media ◽

Layer By Layer ◽

Cross Sectional ◽

New Techniques ◽

Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

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TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088324 ◽

1991 ◽

Vol 49 ◽

pp. 802-803

Author(s):

C.M. Sung ◽

M. Levinson ◽

M. Tabasky ◽

K. Ostreicher ◽

B.M. Ditchek

Keyword(s):

Substrate Surface ◽

Bulk Sample ◽

Surface Cleaning ◽

Native Oxide ◽

Czochralski Growth ◽

Ion Milling ◽

Cross Sectional ◽

Cleaning Methods ◽

Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

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Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126433 ◽

1987 ◽

Vol 45 ◽

pp. 326-327

Author(s):

A.K. Rai ◽

A.K. Petford-Long ◽

A. Ezis ◽

D.W. Langer

Keyword(s):

Contact Resistance ◽

Ohmic Contact ◽

Ohmic Contacts ◽

Microstructural Characterization ◽

Almost Everywhere ◽

Spacer Layer ◽

Good Contact ◽

The Relationship ◽

Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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Microstructural characterization of a cast RENi5-based alloy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100151714 ◽

1993 ◽

Vol 51 ◽

pp. 1176-1177

Author(s):

G. M. Micha ◽

L. Zhang

Keyword(s):

Electron Microscopy ◽

Rare Earth ◽

Microstructural Characterization ◽

Binary Compound ◽

Nickel Metal ◽

Cast Material ◽

Nickel Metal Hydride ◽

Transmission Electron ◽

Cast Condition

RENi5 (RE: rare earth) based alloys have been extensively evaluated for use as an electrode material for nickel-metal hydride batteries. A variety of alloys have been developed from the prototype intermetallic compound LaNi5. The use of mischmetal as a source of rare earth combined with transition metal and Al substitutions for Ni has caused the evolution of the alloy from a binary compound to one containing eight or more elements. This study evaluated the microstructural features of a complex commercial RENi5 based alloy using scanning and transmission electron microscopy.The alloy was evaluated in the as-cast condition. Its chemistry in at. pct. determined by bulk techniques was 12.1 La, 3.2 Ce, 1.5 Pr, 4.9 Nd, 50.2 Ni, 10.4 Co, 5.3 Mn and 2.0 Al. The as-cast material was of low strength, very brittle and contained a multitude of internal cracks. TEM foils could only be prepared by first embedding pieces of the alloy in epoxy.

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