Temperature-dependent electronic charge transport characteristics at MoS2/p-type Ge heterojunctions

2018 ◽  
Vol 757 ◽  
pp. 221-227 ◽  
Author(s):  
Seung Bae Son ◽  
Yonghun Kim ◽  
Byungjin Cho ◽  
Chel-Jong Choi ◽  
Woong-Ki Hong
Keyword(s):  
Charge Transport ◽  
Electronic Charge ◽  
Temperature Dependent ◽  
P Type

Temperature Dependent Charge Transport Properties Of P-type Cu[sub x](CdTe)[sub y]O[sub z] Films Studied By Au Ohmic And Schottky Contacts

2011 ◽  
Author(s):  
Victor-Tapio Rangel-Kuoppa ◽  
Sujel-Melina Murillo-Polania ◽  
J. Carmona-Rodríguez ◽  
R. Lozada-Morales ◽  
J. Márquez-Marín ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Schottky Contacts ◽  
Temperature Dependent ◽  
P Type

Bismuth-catalyzed and doped p-type ZnSe nanowires and their temperature-dependent charge transport properties

2016 ◽  
Vol 4 (4) ◽  
pp. 857-862 ◽  
Author(s):  
Xiwei Zhang ◽  
Jiansheng Jie ◽  
Xiujuan Zhang ◽  
Fengjun Yu
Keyword(s):  
Charge Transport ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Charge Transport Mechanism ◽  
Electrical Measurements ◽  
Temperature Dependent ◽  
One Step ◽  
Znse Nanowires ◽  
P Type

Simultaneous ZnSe nanowire growth and p-type doping is realized in one step by using Bi as the catalyst and dopant via chemical vapor deposition. Temperature-dependent electrical measurements are used for understanding the charge transport mechanism and the doping effect.

scholarly journals Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu2O Photocathodes

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 338
Author(s):  
Hak Hyeon Lee ◽  
Dong Su Kim ◽  
Ji Hoon Choi ◽  
Young Been Kim ◽  
Sung Hyeon Jung ◽  
...  
Keyword(s):  
Charge Transport ◽  
Atomic Layer ◽  
Absorption Efficiency ◽  
Open Circuit ◽  
Band Alignment ◽  
Conformal Coating ◽  
Layer Deposition ◽  
Layer Stacking ◽  
Doped Zno ◽  
P Type

An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm−2 at 0 VRHE for over 100 min.

Polymorphism and the influence of crystal structure on the luminescence of the opto-electronic material 4,4′-bis(9-carbazolyl)biphenyl

CrystEngComm ◽  
2014 ◽  
Vol 16 (33) ◽  
pp. 7621-7625 ◽  
Author(s):  
Cody J. Gleason ◽  
Jordan M. Cox ◽  
Ian M. Walton ◽  
Jason B. Benedict
Keyword(s):  
Crystal Structure ◽  
Electronic Structure ◽  
Electronic Material ◽  
Single Crystal ◽  
Charge Transport ◽  
Luminescent Properties ◽  
Electronic Structure Calculations ◽  
Electronic Charge ◽  
Single Crystal Structures ◽  
Structure Calculations

Single crystal structures, luminescent properties and electronic structure calculations of three polymorphs of the opto-electronic charge transport material 4,4′-bis(9-carbazolyl)biphenyl.

On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

1987 ◽  
Vol 106 ◽  
Author(s):  
Mark S. Rodder ◽  
Dimitri A. Antoniadis
Keyword(s):  
Numerical Calculation ◽  
Polycrystalline Silicon ◽  
Amorphous Region ◽  
Defect States ◽  
Temperature Dependent ◽  
Step Process ◽  
Dependent Potential ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
P Type

ABSTRACTIt is shown that the grain boundary (GB) in polycrystalline-silicon (poly-Si) films need not be modeled as a temperature-dependent potential barrier or as an amorphous region to explain the temperature (T) dependence of resistivity (ρ) in p-type poly-Si films at low T. Specifically, we consider that QB defect states allow for the tunneling component of current to occur by a two-step process. Incorporation of the two-step process in a numerical calculation of ρ vs. T results in excellent agreement with available data from 100 K to 300 K.

Unified electronic charge transport model for organic solar cells

2013 ◽  
Vol 114 (2) ◽  
pp. 024501 ◽  
Author(s):  
Seyyed Sadegh Mottaghian ◽  
Matt Biesecker ◽  
Khadijeh Bayat ◽  
Mahdi Farrokh Baroughi
Keyword(s):  
Solar Cells ◽  
Charge Transport ◽  
Organic Solar Cells ◽  
Transport Model ◽  
Electronic Charge

Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

1999 ◽  
Vol 607 ◽  
Author(s):  
S. Kato ◽  
T. Horikoshi ◽  
T. Ohkubo ◽  
T. Iida ◽  
Y. Takano
Keyword(s):  
Silicon Germanium ◽  
Bulk Crystals ◽  
Temperature Dependent ◽  
Alloy Scattering ◽  
Self Diffusion ◽  
Pn Junction ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Current Voltage Characteristics ◽  
P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

2015 ◽  
Vol 1770 ◽  
pp. 25-30 ◽  
Author(s):  
V.C. Lopes ◽  
A.J. Syllaios ◽  
D. Whitfield ◽  
K. Shrestha ◽  
C.L. Littler
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Noise Component ◽  
Variable Range ◽  
Noise Measurements ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

Simulation of the Charge Transport Across Grain Boundaries in p-Type SrTiO 3 Ceramics

2002 ◽  
Vol 268 (1) ◽  
pp. 215-220
Author(s):  
Th. Hölbling ◽  
R. Waser
Keyword(s):  
Charge Transport ◽  
Grain Boundaries ◽  
P Type
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