Epitaxial growth and electrical performance of graphene/3C–SiC films by laser CVD

2020 ◽  
Vol 826 ◽  
pp. 154198 ◽  
Author(s):  
Han Guo ◽  
Xiaoyu Yang ◽  
Qingfang Xu ◽  
Wenzhong Lu ◽  
Jun Li ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Electrical Performance ◽  
Laser Cvd ◽  
Sic Films

Epitaxy of SiC Films on Sapphire by Laser CVD

1987 ◽  
Vol 97 ◽  
Author(s):  
Hirohide Nakamatsu ◽  
Shichio Kawai
Keyword(s):  
Epitaxial Growth ◽  
Excimer Laser ◽  
Low Pressure ◽  
Epitaxial Films ◽  
Twin Structure ◽  
Arf Excimer Laser ◽  
Carrier Gases ◽  
Laser Cvd ◽  
Sic Films ◽  
Peeling Off

ABSTRACTArF excimer laser CVD was performed in a very-low pressure reactor. C2H2 and Si2H6 were used as source gases and carrier gases were not used. Epitaxial 3C-type SiC(111) grew parallel to α-Al2O3 (0001) substrate. It had a twin structure. Mismatch between the lattice parameters was estimated to be 12%. The epitaxial growth occurred down to 980°C and the films about 0.5μm in thickness grew at 1150°C for 30 minutes. Unirradiated films were polycrystalline or spontaneously peeling-off epitaxial films, while irradiated ones were strongly adherent epitaxial films.

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 209-212
Author(s):  
Hideki Shimizu ◽  
Kensaku Hisada ◽  
Yosuke Aoyama
Keyword(s):  
Epitaxial Growth ◽  
Flow Rate ◽  
Hydrogen Plasma ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Ellipsometric Measurement ◽  
X Ray ◽  
Hydrogen Radicals ◽  
Sic Films ◽  
Reflection Electron Diffraction

Effects of the flow rate of C3H8 passed through hydrogen plasma on deposition rates and^microstructures of 3C-SiC films on Si (100) substrate were investigated by a reflection electron diffraction, an X-ray diffraction and an ellipsometric measurement. The deposition rate of the films increased independently of the flow rate of C3H8 with increasing the flow rate of SiH4. The films grown with increasing the flow rate of C3H8 kept single crystalline structure even at high flow rate of SiH4. Hydrogen radicals generated from C3H8 decomposition by plasma increase with increasing the flow rate of C3H8, and play important rolls to keep epitaxial growth.

Synthesis of Epitaxial Silicon Carbide Films by Laser CVD

1987 ◽  
Vol 101 ◽  
Author(s):  
Hirohide Nakamatsu ◽  
Kazuhiko Hirata ◽  
Shichio Kawai
Keyword(s):  
Film Growth ◽  
Uv Light ◽  
Epitaxial Films ◽  
Epitaxial Silicon ◽  
Uv Light Irradiation ◽  
Laser Cvd ◽  
By Products ◽  
Sic Films ◽  
Gas Supply ◽  
Blue Photoluminescence

ABSTRACTArF exciraer laser CVD was performed to give epitaxial SiC films on the sapphire or (α-A12O3 (0001) substrate. The rate of film growth was limited by the diffusion of the supplied gases. Small amounts of the gas supply failed to produce the SiC deposition and etched the substrate. The UV light irradiation of the substrate was necessary for the photo-excitation to grow the adherent epitaxial films. Filtered UV light from a D2 lamp revealed that the light with the wavelength shorter than about 310nm was effective for the epitaxial growth. It was found to be essential to excite intermediate products or by-products in the absorbed layer on the substrate. The epitaxial SiC films on the αA12O3 gave blue photoluminescence which may be ascribed to the superstructure of 3C-type SiC crystals.

Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

2018 ◽  
Vol 101 (9) ◽  
pp. 3850-3856 ◽  
Author(s):  
Peipei Zhu ◽  
Meijun Yang ◽  
Qingfang Xu ◽  
Qingyun Sun ◽  
Rong Tu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Laser Cvd

Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

1995 ◽  
Vol 78 (8) ◽  
pp. 5136-5138 ◽  
Author(s):  
Christian A. Zorman ◽  
Aaron J. Fleischman ◽  
Andrew S. Dewa ◽  
Mehran Mehregany ◽  
Chacko Jacob ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Pressure Chemical ◽  
Sic Films

SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide

2010 ◽  
Vol 645-648 ◽  
pp. 139-142 ◽  
Author(s):  
Giovanni Attolini ◽  
Matteo Bosi ◽  
Francesca Rossi ◽  
Bernard Enrico Watts ◽  
Giancarlo Salviati ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carbon Source ◽  
Epitaxial Growth ◽  
Carbon Tetrabromide ◽  
Continuous Layer ◽  
Sic Films

3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250°C. XRD, TEM, AFM, and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous layer with hillocks on top is obtained above 1200°C. The shape and faceting of the islands are analyzed by AFM, showing (311) preferred facets.

Localized epitaxial growth of hexagonal and cubic SiC films on Si by vacuum annealing

1996 ◽  
Vol 69 (7) ◽  
pp. 916-918 ◽  
Author(s):  
Jian‐Shing Luo ◽  
Wen‐Tai Lin
Keyword(s):  
Epitaxial Growth ◽  
Vacuum Annealing ◽  
Sic Films

Elimination of Voids at Interface of β-SiC Films and Si Substrate by Laser CVD

2018 ◽  
Vol 33 (2) ◽  
pp. 356-362
Author(s):  
Peipei Zhu ◽  
Qingfang Xu ◽  
Han Guo ◽  
Rong Tu ◽  
Song Zhang ◽  
...  
Keyword(s):  
Si Substrate ◽  
Laser Cvd ◽  
Sic Films

SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology

2006 ◽  
Vol 527-529 ◽  
pp. 251-254 ◽  
Author(s):  
Yuuichi Takeuchi ◽  
Mitsuhiro Kataoka ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami ◽  
Rajesh Kumar Malhan
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Crystal Orientation ◽  
Growth Process ◽  
Diffusion Length ◽  
Growth Behavior ◽  
Electrical Performance ◽  
Similar Growth ◽  
Growth Technology

In this work, we have developed an innovative epitaxial growth process named the “Migration Enhanced Embedded Epitaxial” (ME3) growth process. It was found that at elevated growth temperatures, the epitaxial growth at the bottom of the trenches is greatly enhanced compared to growth on the sidewalls. This is attributed to the large surface diffusion length of reactant species mainly due to the higher growth temperature. In addition, it was found that this high temperature ME3 growth process is not influenced by the crystal-orientation. Similar growth behavior was observed for stripe-trench structures aligned either along the [11-20] or [1-100] directions. No difference was observed in the electrical performance of the pn diodes fabricated on either oriented stripe geometry. The ME3 process can also be used as an alternative to ion-implantation technology for selective doping process.

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