Effect of rapid thermal annealing on damage of silicon matrix implanted by low-energy rhenium ions

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

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Process interactions between low-energy ion implantation and rapid-thermal annealing for optimized ultrashallow junction formation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591212 ◽

2000 ◽

Vol 18 (1) ◽

pp. 462 ◽

Cited By ~ 10

Author(s):

A. J. Murrell ◽

E. J. H. Collart ◽

M. A. Foad ◽

D. Jennings

Keyword(s):

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Low Energy ◽

Junction Formation ◽

Ultrashallow Junction

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X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.195.274 ◽

2012 ◽

Vol 195 ◽

pp. 274-276 ◽

Cited By ~ 1

Author(s):

Philipp Hönicke ◽

Matthias Müller ◽

Burkhard Beckhoff

Keyword(s):

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Measurement Techniques ◽

Depth Profiling ◽

Low Energy ◽

Semiconductor Materials ◽

Leakage Currents ◽

X Ray ◽

20 Nm

The continuing shrinking of the component dimensions in ULSI technology requires junction depths in the 20-nm regime and below to avoid leakage currents. These ultra shallow dopant distributions can be formed by ultra-low energy (ULE) ion implantation. However, accurate measurement techniques for ultra-shallow dopant profiles are required in order to characterize ULE implantation and the necessary rapid thermal annealing (RTA) processes.

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Influence of fluorine preamorphization on the diffusion and activation of low‐energy implanted boron during rapid thermal annealing

Applied Physics Letters ◽

10.1063/1.112857 ◽

1994 ◽

Vol 65 (14) ◽

pp. 1829-1831 ◽

Cited By ~ 34

Author(s):

T. H. Huang ◽

H. Kinoshita ◽

D. L. Kwong

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Low Energy

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Shallow Junctions for Sub-100 Nm Cmos Technology

MRS Proceedings ◽

10.1557/proc-669-j3.5 ◽

2001 ◽

Vol 669 ◽

Cited By ~ 2

Author(s):

Veerle Meyssen ◽

Peter Stolk ◽

Jeroen van Zijl ◽

Jurgen van Berkum ◽

Willem van de Wijgert ◽

...

Keyword(s):

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Cmos Technology ◽

Low Energy ◽

Annealing Conditions ◽

Delta Doping ◽

Shallow Junctions ◽

P Type ◽

Spike Annealing

ABSTRACTThis paper studies the use of ion implantation and rapid thermal annealing for the fabrication of shallow junctions in sub-100 nm CMOS technology. Spike annealing recipes were optimized on the basis of delta-doping diffusion experiments and shallow junction characteristics. In addition, using GeF2 pre-amorphization implants in combination with low-energy BF2 and spike annealing, p-type junctions depths of 30 nm were obtained with sheet resistances as low as 390 Ω/sq. The combined finetuning of implantation and annealing conditions is expected to enable junction scaling into the 70-nm CMOS technology node.

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GaAs/AlGaAs Quantum Well Mixing Using Low Energy Ion Implantation and Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-144-445 ◽

1988 ◽

Vol 144 ◽

Cited By ~ 1

Author(s):

B. Elman ◽

Emil S. Koteles ◽

P. Melman ◽

C. A. Armiento

Keyword(s):

Ion Implantation ◽

Quantum Wells ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Ion Beam ◽

Low Energy ◽

Exciton Transition ◽

Transition Energies ◽

Diffusion Of Vacancies ◽

Implantation Fluence

ABSTRACTLow energy ion implantation followed by rapid thermal annealing (RTA) was utilized to modify exciton transition energies of MBE- rown GaAs/AlGaAs quantum wells (QW). The samples were irradiated with an 75As ion beam with an energy low enough that the depth of the disordered region was spatially separated from the QWs. After RTA, exciton energies (determined using optical spectroscopy) showed large increases which were dependent on QW widths and the implantation fluence with no significant increases in peak linewidths. These energy shifts were interpreted as resulting from the modification of the shapes of the as-grown QWs from square (abrupt interfaces) to rounded due to enhanced Ga and Al interdiffusion in irradiated areas. These results are similar to our data on the RTA of the same structures capped with SiO2 and are consistent with the model of enhanced intermixing of Al and Ga atoms due to diffusion of vacancies generated near the surface.

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