Lead zirconium titanate thin films prepared by thermal annealing of multilayer structures composed of PbO, ZrO2 and TiO2

2009 ◽  
Vol 15 (5) ◽  
pp. 694-698 ◽  
Author(s):  
Byung Sun Kang ◽  
Won Gyu Lee
2008 ◽  
Vol 516 (18) ◽  
pp. 6052-6057 ◽  
Author(s):  
Omar Zohni ◽  
Gregory Buckner ◽  
Taeyun Kim ◽  
Angus Kingon ◽  
Jeff Maranchi ◽  
...  

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 713-717 ◽  
Author(s):  
Sriram Kalpat ◽  
X. Du ◽  
Issac R. Abothu ◽  
Akira Akiba ◽  
Hiroshi Goto ◽  
...  

1999 ◽  
Vol 604 ◽  
Author(s):  
S. Kalpat ◽  
X. Du ◽  
I.R. Abothu ◽  
A. Akiba ◽  
H. Goto ◽  
...  

AbstractHighly (100) and (111) oriented lead zirconium titanate (PZT) thin films have been grown by using reactive rf-sputtering. PZT thin films with rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The polarization versus electric field curves and the resistivity of the films were measured using a standardized RT66A ferroelectric test system. The dielectric constant and the loss were determined using an impedence analyzer. The PZT(100) oriented films showed larger dielectric constant and loss than the PZT(111) films. The PZT(100) films possessed sharper square-like hysteresis loops compared to the PZT(111) films, as expected from our phenomenological calculations.


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