Coupled annealing temperature and layer thickness effect on strengthening mechanisms of Ti/Ni multilayer thin films

ABSTRACTIn order to understand thickness and interfacial effects on the crystallization kinetics of amorphous solids, Ni(P) thin films electrolessly deposited on Cu seed layers were annealed at constant heating rates or at constant temperatures in a DSC to obtain activation energies andAvrami exponents. It was found that the activation energy of crystallization in Ni(P) changes asa function of sample thickness when the sample thickness is less than 1.0 μm. Furthermore, the Avrami exponent was found to change not only as a function of thickness but also as a function of annealing temperature.

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Controlling Layer Thickness and Photostability of Water-Soluble Cationic Poly(p-phenylenevinylene) in Multilayer Thin Films by Surfactant Complexation

Langmuir ◽

10.1021/la802080t ◽

2008 ◽

Vol 24 (22) ◽

pp. 13127-13131 ◽

Cited By ~ 10

Author(s):

Jeremy S. Treger ◽

Vincent Y. Ma ◽

Yuan Gao ◽

Chun-Chih Wang ◽

Seaho Jeon ◽

...

Keyword(s):

Thin Films ◽

Layer Thickness ◽

Water Soluble ◽

Multilayer Thin Films

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Soft Magnetic Properties of [Fe80Ni20-O/NiZn-Ferrite]n Multilayer Thin Films for High Frequency Application

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.488-489.174 ◽

2014 ◽

Vol 488-489 ◽

pp. 174-177

Author(s):

Rui Xu ◽

Lai Sen Wang ◽

Xiao Long Liu ◽

Meng Lei ◽

Qing Luo ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Layer Thickness ◽

High Frequency ◽

Anisotropy Field ◽

Soft Magnetic Properties ◽

Multilayer Thin Films ◽

Insulation Layer ◽

Soft Magnetic ◽

Measured Resistivity

In this research, a series of [Fe80Ni20-O/NiZn-ferritn multilayer thin films with different insulation layer thickness were prepared by magnetron sputtering at room temperature. The high frequency soft magnetic properties of [Fe80Ni20-O/NiZn-ferritn multilayer thin films were investigated. It was found that the in-plane magnetic anisotropy field (Hk) and saturation magnetizations (4πMs) can be adjusted by changing the insulation layer thickness, and the optimal Hk and 4πMs can be obtained as the insulation layer thickness of 2.5 nm. The adjustment of insulation layer thickness is essential to obtain low coercivity (Hc) and high permeability (μ) of the multilayer thin films. The measured resistivity (ρ) of [Fe80Ni20-O/NiZn-ferritn multilayer thin films was increased from 211 to 448 μΩcm with increasing the insulation layer thickness.

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Achieving maximum hardness in semi-coherent multilayer thin films with unequal layer thickness

Acta Materialia ◽

10.1016/j.actamat.2012.01.029 ◽

2012 ◽

Vol 60 (6-7) ◽

pp. 2625-2636 ◽

Cited By ~ 34

Author(s):

John S. Carpenter ◽

Amit Misra ◽

Peter M. Anderson

Keyword(s):

Thin Films ◽

Layer Thickness ◽

Multilayer Thin Films ◽

Maximum Hardness

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Thickness Effect on Microstructure and Residual Stress of Annealed Copper Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.681.139 ◽

2011 ◽

Vol 681 ◽

pp. 139-144 ◽

Cited By ~ 2

Author(s):

Renaud Vayrette ◽

Christian Rivero ◽

Sylvain Blayac ◽

Karim Inal

Keyword(s):

Thin Films ◽

Residual Stress ◽

Film Thickness ◽

Crystallite Size ◽

Annealing Temperature ◽

Stress Generation ◽

Thickness Effect ◽

Electron Backscattered Diffraction ◽

Electroplated Copper ◽

Stress Models

In this work, coupled effects of thickness and annealing temperature on both microstructure and residual stress of electroplated copper thin films are studied. Microstructure is investigated by Electron Backscattered Diffraction (EBSD) and residual stress is estimated from samples curvature. All films exhibit highly twinned grains. Except for several microns films, median crystallite size grows with both film thickness and annealing temperature. Concerning residual stress, it decreases, first as the increase of film thickness, and secondly as the decrease of annealing temperature. The comparison between experiments and stress models demonstrates that the root mechanisms of residual stress generation change with annealing temperature. As well as annealing temperature, film thickness determines the level of residual stress through control of microstructure. Furthermore, EBSD investigations confirmed that the relevant microstructural length to define mechanical properties of thin copper films is the median crystallite size.

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Crystallization trend in STO-seeded sputtered PZT thin films: Effects of seed layer thickness and post-annealing temperature

Vacuum ◽

10.1016/j.vacuum.2014.03.024 ◽

2014 ◽

Vol 107 ◽

pp. 10-19 ◽

Cited By ~ 3

Author(s):

Ankita Bose ◽

Monjoy Sreemany ◽

Sandip Bysakh

Keyword(s):

Thin Films ◽

Layer Thickness ◽

Seed Layer ◽

Annealing Temperature ◽

Pzt Thin Films ◽

Post Annealing ◽

Post Annealing Temperature ◽

Seed Layer Thickness

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Improving the crack resistance and fracture toughness of Cu/Ru multilayer thin films via tailoring the individual layer thickness

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2018.01.282 ◽

2018 ◽

Vol 742 ◽

pp. 45-53 ◽

Cited By ~ 10

Author(s):

Qing Zhou ◽

Shuang Zhang ◽

Xuezi Wei ◽

Fei Wang ◽

Ping Huang ◽

...

Keyword(s):

Thin Films ◽

Fracture Toughness ◽

Crack Resistance ◽

Layer Thickness ◽

Multilayer Thin Films ◽

Individual Layer ◽

Individual Layer Thickness ◽

The Individual

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Kinetics of Intermetallic Formation in Free Standing Cu/Mg Multilayer Thin Films

MRS Proceedings ◽

10.1557/proc-260-947 ◽

1992 ◽

Vol 260 ◽

Cited By ~ 2

Author(s):

B. Arcof ◽

L. A. Clevenger ◽

S. P. Murarka ◽

J. M. E. Harper ◽

C. Cabrai

Keyword(s):

Thin Films ◽

Activation Energy ◽

Layer Thickness ◽

Reaction Times ◽

Thickness Ratio ◽

Formation Mechanisms ◽

Multilayer Thin Films ◽

Scanning Calorimetry ◽

Free Standing ◽

Layer Thickness Ratio

ABSTRACTDifferential scanning calorimetry (DSC) has been used to study the temperatures, kinetics and phase formation mechanisms in Cu/Mg multilayer thin films. When the Cu:Mg layer thickness ratio was 1:4, CuMg2 was the only phase that formed. Cu/Mg films with a layer thickness ratio of 1:1 first form CuMg2 at 215°C with an activation energy of 1.0 ± 0.04 eV and then Cu2Mg at 380°C with an activation energy of 0.73 ± 0.04 eV. The temperatures at which the two phases form decrease as the layer thicknesses decrease due to the shorter reaction times needed in thinner films. The constant scan rate DSC data from films with a layer thickness ratio of 1:1 show three exothermic peaks. The first peak is extremely sharp and results from the formation of isolated nuclei of CuMg2 at the Cu/Mg interface. The formation of CuMg2 is thus shown to be nucleation controlled. The second peak is a growth peak due to the heat released during the growth of CuMg2. The third peak corresponds to the formation and growth of Cu2Mg.

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ZrO2 Layer Thickness Dependent Electrical and Dielectric Properties of BST/ZrO2/BST Multilayer Thin Films

MRS Proceedings ◽

10.1557/opl.2011.891 ◽

2011 ◽

Vol 1368 ◽

Author(s):

Santosh K. Sahoo ◽

D. Misra ◽

D. C. Agrawal ◽

Y. N. Mohapatra

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Electrical Properties ◽

Dielectric Loss ◽

Layer Thickness ◽

Leakage Current ◽

Loss Tangent ◽

Multilayer Structure ◽

Multilayer Thin Films ◽

High Dielectric

ABSTRACTRecently, high K materials play an important role in microelectronic devices such as capacitors, memory devices, and microwave devices. Now a days ferroelectric barium strontium titanate [BaxSr1-xTiO3, (BST)] thin film is being actively investigated for applications in dynamic random access memories (DRAM), field effect transistor (FET), and tunable devices because of its properties such as high dielectric constant, low leakage current, low dielectric loss, and high dielectric breakdown strength. Several approaches have been used to optimize the dielectric and electrical properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in dielectric constant, loss tangent, and leakage current in the multilayer thin films. Also it is shown that the properties of multilayer structure are found to depend strongly on the sublayer thicknesses. In this work the effect of ZrO2 layer thickness on the dielectric, ferroelectric as well as electrical properties of BST/ZrO2/BST multilayer structure is studied. The multilayer Ba0.8Sr0.2TiO3/ZrO2/Ba0.8Sr0.2TiO3 film is deposited by a sol-gel process on the platinized Si substrate. The thickness of the middle ZrO2 layer is varied while keeping the top and bottom BST layer thickness as fixed. It is observed that the dielectric constant, dielectric loss tangent, and leakage current of the multilayer films reduce with the increase of ZrO2 layer thickness and hence suitable for memory device applications. The ferroelectric properties of the multilayer film also decrease with the ZrO2 layer thickness.

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