Influence of surface roughness on the sputter yield of Mo under keV D ion irradiation

2021 ◽  
pp. 153135
Author(s):  
M. Kelemen ◽  
T. Schwarz-Selinger ◽  
A. Mutzke ◽  
M. Balden ◽  
E. Vassallo ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Irradiation ◽  
Sputter Yield

Work Function Modulation of Few-Layer Graphene by Swift Heavy Ion Irradiation

2021 ◽  
Vol 21 (11) ◽  
pp. 5603-5610
Author(s):  
P. K. Kasana ◽  
Jyoti Shakya ◽  
Tanuja Mohanty
Keyword(s):  
Surface Roughness ◽  
Work Function ◽  
Defect Density ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Diffraction Measurement ◽  
X Rays ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion

Here, we report the structural and electronic modification induced in chemical vapor deposited graphene by using swift heavy ions (70 MeV Ni6+).Raman spectroscopy was used to quantify the irradiation-induced modification in vibrational properties. The increase in defect density with fluence causes an increase in the intensity ratio of its characteristic Raman D and G band. The increase in defect density also results in a decrease in crystallite size. The changes in the crystal structure are observed from X-rays diffraction measurement. Swift heavy ion irradiation induced defect, modified the surface roughness and surface potential of graphene thin film as measured from atomic force microscopy and scanning Kelvin probe microscopy respectively. The increase in the work function, surface roughness as well as defect concentration with fluence, indicate the possibility of linear correlation between them. Presence of defects in graphene sheets strongly affects surface electronic and optical properties of the material that can be used to tailor the optoelectronics device performance.

Surface roughness factor measurements of 304 and 316 stainless steels with helium ion irradiation

1981 ◽  
Vol 103 ◽  
pp. 445-449 ◽  
Author(s):  
S. Maeda ◽  
M. Mohri ◽  
M. Hashiba ◽  
T. Yamashina ◽  
M. Kaminsky
Keyword(s):  
Surface Roughness ◽  
Stainless Steels ◽  
Ion Irradiation ◽  
Roughness Factor ◽  
Helium Ion

scholarly journals Studies of Self-Organized Nanostructures on InP(111) Surfaces After Low Energy Ar+ Ion Irradiation

2008 ◽  
Vol 8 (8) ◽  
pp. 4227-4230
Author(s):  
D. Paramanik ◽  
S. Majumdar ◽  
S. R. Sahoo ◽  
S. N. Sahu ◽  
S. Varma
Keyword(s):  
Surface Roughness ◽  
Scanning Probe Microscopy ◽  
Ion Irradiation ◽  
Low Energy ◽  
Scanning Probe ◽  
Ion Sputtering ◽  
Phonon Confinement ◽  
Phonon Softening ◽  
Self Organized ◽  
Crossover Behavior

We report formation of self organized InP nano dots using 3 keV Ar+ ion sputtering, at 15° incidence from surface normal, on InP(111) surface. Morphology and optical properties of the sputtered surface, as a function of sputtering time, have been investigated by Scanning Probe Microscopy and Raman Scattering techniques. Uniform patterns of nano dots are observed for different durations of sputtering. The sizes and the heights of these nano dots vary between 10 to 100 nm and 20 to 40 nm, respectively. With increasing of sputtering time, t, the size and height of these nano dots increases up to a certain sputtering time tc. However beyond tc, the dots break down into smaller nanostructures, and as a result, the size and height of these nanostructures decrease. The uniformity and regularity of these structures are also lost for sputtering beyond tc. The crossover behavior is also observed in the rms surface roughness. Raman investigations of InP nano dots reveal optical phonon softening due to phonon confinement in the surface nano dots.

Profile Changes and Self-sputtering during Low Energy Ion Implantation.

2002 ◽  
Vol 717 ◽  
Author(s):  
W. Vandervorst ◽  
T. Janssens ◽  
B. Brijs ◽  
R. Lindsay ◽  
E. J. H. Collart ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ion Irradiation ◽  
Theoretical Calculations ◽  
Basic Mechanism ◽  
Low Energy ◽  
Sufficient Evidence ◽  
Nuclear Reaction Analysis ◽  
Surface Binding ◽  
Surface Migration ◽  
Sputter Yield

AbstractContinued device scaling requires the formation of ever-shallower junctions with low resistance. A desirable option to form these junctions is still the use of conventional ion implantation. However in order to meet the junction depth/sheet resistance goals, a strong reduction in implant energy and increase in implant dose is required. Earlier work for B and BF2-implants, has suggested that during low energy ion implantation self-sputtering may become an important factor influencing/limiting the retained dose. The basic mechanism for the selfsputtering with increasing dose is the increasing dopant concentration at the surface leading to an increased probability for re-emission by the sputtering process. Simple models describing ion retention in combination with sputtering are based on this concept and indeed predict a selfsputtering process limiting the final retained dose. Unfortunately the theoretical calculations only predict a significant sputtering at doses >51016 at/cm2 whereas experimental results already show a limit in retained dose at 5 1015at/cm2.In order to confirm the experimental data, low energy B, BF2, As and Sb implants have been made. Dose retention was monitored using nuclear reaction analysis and RBS whereby details of the dopant profile (redistribution) were studied using high resolution SIMS. For As and Sb no self-sputtering up to a dose of 1 1016at/cm2 can be found. For B a small dose loss (<10%) is seen significantly below the literature data. For BF2 a 20 % dose loss is observed. None of the SIMS profiles provide sufficient evidence for enhanced B-surface migration as required to explain the enhanced self-sputtering. On the other hand such a surface migration is reminiscent of the observations in SIMS whereby also an enhanced mobility of B during ion irradiation is required to explain the anomalous B-surface peak in many SIMS profiles. Based on the SIMS profiles a component sputter yield for B can be derived which is significantly higher than the matrix sputter yield suggesting a weak bonding of the segregated species leading to a reduced surface binding energy and thus enhanced sputtering yield.

scholarly journals Surface Morphology and Microstructure of Al-O Alloys Grown by ECR Plasma Deposition

1995 ◽  
Vol 403 ◽  
Author(s):  
D. A. Marshall ◽  
J. C. Barbour ◽  
D. M. Follstaedt ◽  
A. J. Howard ◽  
R. J. Lad
Keyword(s):  
Surface Roughness ◽  
Deposition Temperature ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Plasma Deposition ◽  
Processing Parameters ◽  
Second Phase ◽  
Applied Bias ◽  
Force Microscopy ◽  
Ecr Plasma

AbstractThe growth of polycrystalline and amorphous aluminum-oxygen alloy films using electronbeam evaporation of Al in the presence of an O2 electron-cyclotron-resonance (ECR) plasma was investigated for film compositions varying from 40% Al (A12O3) to near 100% Al (A1Ox). Processing parameters such as deposition temperature and ion energy were varied to study their effects on surface texture and film microstructure. The Al-rich films (AlOx) contain polycrystalline fcc Al grains with finely dispersed second-phase particles of γ-A12O3 (1–2 nm in size). The surface roughness of these films was measured by atomic force microscopy and found to increase with sample bias and deposition temperature. Stoichiometric A12O3 films grown at 100°C and 400°C without an applied bias were amorphous, while an applied bias of -140 V formed a nanocrystalline γ-A12O3 film at 400°C. The surface roughness of the A12O3 increased with temperature while ion irradiation produced a smoother surface

Changes of Wettability and Surface Energy of Polymer by keV Ar+ Ion Irradiation

1995 ◽  
Vol 396 ◽  
Author(s):  
Jun-Sik Cho ◽  
Won-Kook Choi ◽  
Ki Hyun Yoon ◽  
Hyung-Jin Jung ◽  
Seok-Keun Koh
Keyword(s):  
Surface Roughness ◽  
Surface Energy ◽  
Photoelectron Spectroscopy ◽  
Ion Irradiation ◽  
Oxygen Flow Rate ◽  
Mean Square ◽  
X Ray ◽  
Atomic Force ◽  
Hydrophilic Group ◽  
Oxygen Gas

AbstractSurface modification of polycarbonate(PC) was performed to improve the wettability by Ar+ ion irradiation with 1 keV energy in oxygen environment. The ion dose ranged from 5 x 1014 to 5 x 1016 ions/cm2 and oxygen flow rate was also varied from 0 to 6 sccm(ml/min.). Contact angle was not much decreased from 78° to 48° for water and from 63° to 32° for formamide by Ar+ ion irradiation without oxygen gas, but largely reduced to 12° for water and to 8° for formamide as Ar+ ion irradiation with 4 seem oxygen gas. Surface energy of modified PC surface which was irradiated with oxygen gas was more increased than that of PC surface irradiated without oxygen gas. It is evident that the increase of surface energy for PC modified with oxygen gas is due to hydrophilic group which result from the chemical reaction between PC surface and oxygen gas. From X-ray photoelectron spectroscopy(XPS) analysis, the newly formed hydrophilic group is identified as hydrophilic C=0 bond, and atomic force microscope(AFM), it is found that the root mean square of surface roughness is changed from 14 Å to 22 ∼ 26 Å for Ar+ ion irradiation only and 26 ∼ 30 Å for Ar+ ion irradiation with 4 seem oxygen gas. Therefore wettability of PC surface is much more affected by newly formed hydrophilic group than surface roughness in keV energy Ar+ ion irradiation.

Effets of surfaces on precipitate morphology in irradiated thin foils

1978 ◽  
Vol 36 (1) ◽  
pp. 654-655
Author(s):  
D.I. Potter ◽  
A. Taylor
Keyword(s):  
Ion Irradiation ◽  
Dark Field Image ◽  
Thin Foil ◽  
Dark Field ◽  
Al Alloy ◽  
Bright Field Image ◽  
Dislocation Loops ◽  
Precipitate Morphology ◽  
Thin Foils

Thermal aging of Ni-12.8 at. % A1 and Ni-12.7 at. % Si produces spatially homogeneous dispersions of cuboidal γ'-Ni3Al or Ni3Si precipitate particles arrayed in the Ni solid solution. We have used 3.5-MeV 58Ni+ ion irradiation to examine the effect of irradiation during precipitation on precipitate morphology and distribution. The nearness of free surfaces produced unusual morphologies in foils thinned prior to irradiation. These thin-foil effects will be important during in-situ investigations of precipitation in the HVEM. The thin foil results can be interpreted in terms of observations from bulk irradiations which are described first.Figure 1a is a dark field image of the γ' precipitate 5000 Å beneath the surface(∿1200 Å short of peak damage) of the Ni-Al alloy irradiated in bulk form. The inhomogeneous spatial distribution of γ' results from the presence of voids and dislocation loops which can be seen in the bright field image of the same area, Fig. 1b.

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

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