The effects of UV radiation on the structure and properties of AZO thin films deposited on quartz glass by magnetron sputtering

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

Download Full-text

Structure and Properties of Nanocrystalline (TiZr)xN1−xThin Films Deposited by DC Unbalanced Magnetron Sputtering

Journal of Nanomaterials ◽

10.1155/2016/2982184 ◽

2016 ◽

Vol 2016 ◽

pp. 1-12 ◽

Cited By ~ 2

Author(s):

Yu-Wei Lin ◽

Chia-Wei Lu ◽

Ge-Ping Yu ◽

Jia-Hong Huang

Keyword(s):

Thin Films ◽

Residual Stress ◽

Magnetron Sputtering ◽

Flow Rate ◽

Nitrogen Flow ◽

Structure And Properties ◽

X Ray Diffraction ◽

Nitrogen Flow Rate ◽

Unbalanced Magnetron Sputtering ◽

Unbalanced Magnetron

This study aims to investigate the effects of nitrogen flow rate (0–2.5 sccm) on the structure and properties of TiZrN films. Nanocrystalline TiZrN thin films were deposited on Si (001) substrates by unbalanced magnetron sputtering. The major effects of the nitrogen flow rate were on the phase, texture, N/(Ti + Zr) ratio, thickness, hardness, residual stress, and resistivity of the TiZrN films. The nitrogen content played an important role in the phase transition. With increasing nitrogen flow rate, the phase changed from mixed TiZr and TiZrN phases to a single TiZrN phase. The X-ray diffraction results indicated that (111) was the preferred orientation for all TiZrN specimens. The N/(Ti + Zr) ratio of the TiZrN films first increased with increasing nitrogen flow rate and then stabilized when the flow rate further increased. When the nitrogen flow rate increased from 0.4 to 1.0 sccm, the hardness and residual stress of the TiZrN thin film increased, whereas the electrical resistivity decreased. None of the properties of the TiZrN thin films changed with nitrogen flow rate above 1.0 sccm because the films contained a stable single phase (TiZrN). At high nitrogen flow rates (1.0–2.5 sccm), the average hardness and resistivity of the TiZrN thin films were approximately 36 GPa and 36.5 μΩ·cm, respectively.

Download Full-text

Effects of Deposition Time on the Structure and Properties of AZO Thin Films Deposited on Quartz Glass by Magnetron Sputtering

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.807.63 ◽

2019 ◽

Vol 807 ◽

pp. 63-67

Author(s):

Jing Kang Ba ◽

Yun Zhang ◽

Xiao Jing Wang

Keyword(s):

Magnetron Sputtering ◽

Quartz Glass ◽

Deposition Time ◽

Diffraction Peak ◽

Visible Light Region ◽

Structure And Properties ◽

Light Region ◽

Average Transmittance ◽

Mean Grain Size ◽

The Mean

The AZO films deposited on quartz glass by magnetron sputtering with different deposition time various from 30min to 120min.All of the obtained samples had a (002) diffraction peak range from 34.31 to 34.52°, while the mean grain size increased from 30.1nm (30min) to 56.1nm (120min) respectively. The XPS survey indicated the photoelectron peaks of Zn ,O and C elements occured. The optimal transmittance of the films reduced obviously from about 92% to 78% near 550nm with deposition time increased from 30min to 120min. And the average transmittance of AZO films prepared at 30, 60 and 90min was about 85% in the visible light region.

Download Full-text