Percolative approach for failure time prediction of thin film interconnects under high current stress

2005 ◽  
Vol 45 (2) ◽  
pp. 391-395 ◽  
Author(s):  
E. Misra ◽  
Md M. Islam ◽  
Mahbub Hasan ◽  
H.C. Kim ◽  
T.L. Alford
Keyword(s):  
Thin Film ◽  
Failure Time ◽  
High Current ◽  
Current Stress ◽  
Time Prediction

High current stress effects in amorphous-InGaZnO4 thin-film transistors

2013 ◽  
Vol 102 (2) ◽  
pp. 023503 ◽  
Author(s):  
Mallory Mativenga ◽  
Sejin Hong ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Current ◽  
Current Stress ◽  
Stress Effects

Characterization of High-Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors by Low-Frequency Noise Measurements

2013 ◽  
Vol 34 (11) ◽  
pp. 1403-1405 ◽  
Author(s):  
Andreas Tsormpatzoglou ◽  
Nikolaos A. Hastas ◽  
Forough Mahmoudabadi ◽  
Nackbong Choi ◽  
Miltiadis K. Hatalis ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
High Current ◽  
Low Frequency Noise ◽  
Current Stress ◽  
Noise Measurements ◽  
Amorphous Ingazno

High Current Density Effect on In-situ Atomic Migration Characteristics of a BiTe Thin Film System

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC06
Author(s):  
Seunghyun Kim ◽  
Yong-Jin Park ◽  
Young-Chang Joo ◽  
Young-Bae Park
Keyword(s):  
Thin Film ◽  
Current Density ◽  
High Current Density ◽  
Density Effect ◽  
Film System ◽  
High Current ◽  
Thin Film System

Failure time prediction using adaptive logical analysis of survival curves and multiple machining signals

2018 ◽  
Vol 31 (2) ◽  
pp. 403-415 ◽  
Author(s):  
Ahmed Elsheikh ◽  
Soumaya Yacout ◽  
Mohamed-Salah Ouali ◽  
Yasser Shaban
Keyword(s):  
Failure Time ◽  
Logical Analysis ◽  
Survival Curves ◽  
Time Prediction

Analytical Treatment of Field-Effect Conduction in Polysilicon thin film Transistors

1997 ◽  
Vol 471 ◽  
Author(s):  
W. Eccleston
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Drain Current ◽  
High Current ◽  
Analytical Treatment ◽  
Channel Mobility ◽  
Current Region ◽  
The Relationship

ABSTRACTThe drift of electrons in the channels of Thin Film Transistors is analysed for discrete grains separated by grain boundaries containing amorphous silicon. The model provides the relationship channel mobility and grain size. The relationship between drain current and the terminal voltages is also predicted. The model relates to normal high current region of transistor operation.

Failure Prediction Analysis on the 172 Basic Plane Based on Grey Theory

2014 ◽  
Vol 624 ◽  
pp. 366-370
Author(s):  
Li Qun Li ◽  
Hui Zhao
Keyword(s):  
Failure Time ◽  
Important Application ◽  
Grey Theory ◽  
Equipment Failure ◽  
Model Data ◽  
Safe Operation ◽  
Time Prediction ◽  
Basic Plane ◽  
Fault Information ◽  
Analysis Prediction

172 basic Cessna plane in the process of operation, the production of equipment failure is random, so the evaluation of equipment performance and to predict its failure time to improve the safe operation of the 172 basic plane has important application value. On the plane this complex system, the grey theory combined with 172 basic Cessna plane, the collection of 172 basic aircraft fault information centralized data processing, analysis, prediction model GM (1, 1), through the calculation of the GM model data, and the error precision fitting test, better realize the basic 172 aircraft equipment failure time prediction.

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