Use of high temperature operating life data to mitigate risks in long-duration space applications that deploy commercial-grade plastic encapsulated semiconductor devices

2006 ◽  
Vol 46 (2-4) ◽  
pp. 360-366 ◽  
Author(s):  
Sanka Ganesan ◽  
Michael Pecht ◽  
Sharon Ling
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Operating Life ◽  
Space Applications ◽  
Life Data ◽  
Commercial Grade ◽  
Long Duration ◽  
Temperature Operating

Latch-Up Induced Slit Voiding in Aluminum Metal Lines

1999 ◽  
Author(s):  
Chunyu Zhang ◽  
Lakshmi Vedula ◽  
Shekhar Khandekar
Keyword(s):  
High Temperature ◽  
Line Width ◽  
Fold Increase ◽  
Metal Line ◽  
Operating Life ◽  
Mixed Signal ◽  
Aluminum Metal ◽  
Temperature Operating ◽  
Latch Up

Abstract Latch-up induced during High Temperature Operating Life (HTOL) test of a mixed signal device fabricated with 1.0 μm CMOS, double poly, double metal process caused failures due to an open in aluminum metal line. Metal lines revealed wedge voids of about 50% of the line width. Triggering of latch up mechanism during the HTOL test resulted in a several fold increase of current flowing through the ground metal line. This increase in current resulted in the growth of the wedge voids leading to failures due to open metal lines.

Luminous Efficiency of Pd-Doped Ag-Alloy Wire Bonded LED Package after Reliability Tests

2019 ◽  
Vol 960 ◽  
pp. 221-230 ◽  
Author(s):  
Jui Hung Yuan ◽  
Tung Han Chuang
Keyword(s):  
High Temperature ◽  
Wavelength Region ◽  
Luminous Flux ◽  
Luminous Efficiency ◽  
Operating Life ◽  
Alloy Wire ◽  
Blue Wavelength ◽  
Pd Alloy ◽  
Temperature Operating ◽  
Temperature Storage

In this study, binary Ag-alloy wires were doped with different Pd concentrations, and each wire was encapsulated in an LED package. The initial optical characteristics were tested, and reliability was tested with the high temperature storage life (HTSL), high temperature operating life (HTOL) and wet high temperature operating life (WHTOL). The luminous efficiency of the Ag-alloy wire LED package was about 2% higher than that of the Au wire package, but the addition of 6% Pd to the Ag-alloy wire decreased the luminous efficiency to close to that of the Au-wire LED package. This was due to the high reflectivity of silver in the blue wavelength region, as compared to the low reflectivity of palladium. After 1,000 hours of HTOL and WHTOL, the results showed that the performance of luminous flux maintenance increased with increasing Pd content, indicating that Ag-alloy wires doped with a sufficient amount of Pd can inhibit degradation due to oxidation reaction and thermal and humidity aging. Therefore, binary Ag-Pd alloy wires produced with specific drawing and annealing processes are suitable for mid-power white light LEDs in lighting applications.

Effects of Sustained Exposure to Temperature and Humidity on the Reliability and Performance of MEMS Microphone

2017 ◽  
Author(s):  
Pradeep Lall ◽  
Amrit Abrol ◽  
David Locker
Keyword(s):  
High Temperature ◽  
Failure Modes ◽  
Sound Waves ◽  
Sensing Element ◽  
Operating Life ◽  
Reliability Data ◽  
Low Temperature Storage ◽  
Mems Microphone ◽  
Mems Microphones ◽  
Temperature Operating

MEMS microphones are extensively used in many applications that require reliability, small size, and high sound quality. For harsh environment reliability data MEMS microphones need to be monitored under conditions mimicking their areas of applications. MEMS microphones have an opening/sound port in order to interact with the environment, therefore cannot be sealed completely since the sensing mechanism requires interaction between sound waves and the sensing element. Little to no information exists on reliability data for MEMS microphones under low/high temperature operating life and temperature humidity bias condition. Our work is primarily focused on providing harsh environmental reliability data which can be useful to MEMS designers and engineers. In this paper the test vehicles with MEMS Microphones have been tested under three different harsh environmental conditions: high temperature operating life (HTOL) at 125°C at 3.3V, low temperature storage (LTS) at −35°C and temperature humidity 85°C/85%RH at 3.3V. The main motive of this study is to document the incremental shift and degradation in output parameters namely distortion, frequency response, power supply rejection capability of IC, frequency vs pressure characteristics and analog output voltage of the MEMS microphone. The survivability of MEMS microphone, ADMP401, has been demonstrated as a function of change in the output parameters. Failure analysis has been conducted on the microphone samples to study failure modes and sites using analytical methods such as SEM, EDS and X-ray.

Fatigue As A Performance Shaping Factor In Human Reliability Analysis For Long-Duration Spaceflight

2020 ◽  
Vol 64 (1) ◽  
pp. 1681-1685
Author(s):  
Ronald Boring ◽  
Thomas Ulrich ◽  
Torrey Mortenson ◽  
David German
Keyword(s):  
Reliability Analysis ◽  
Meta Analysis ◽  
Extended Period ◽  
Human Reliability ◽  
Human Reliability Analysis ◽  
Space Applications ◽  
Performance Shaping Factors ◽  
Long Duration ◽  
Starting Point ◽  
Chronic Sleep

This paper provides background on the process to enhance human reliability analysis (HRA) for long-duration space applications. While short-duration missions largely mirror ground activities and fit well with existing HRA methods, new missions to the Moon or Mars entail a significantly longer duration of time in space for astronauts. This extended period in space presents opportunities to affect astronaut performance that require consideration of new performance shaping factors (PSFs). In the present paper, we conducted a meta-analysis on fatigue and developed a new PSF to account for chronic sleep deprivation associated with long-duration space missions. Fatigue provides a starting point for additional PSFs needed for space HRA.

Silicon Carbide Die Attach Scheme for 500°C Operation

2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Semiconductor Devices ◽  
Single Crystal Silicon ◽  
Film Material ◽  
Crystal Silicon ◽  
Pure Alumina ◽  
Die Attach

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.

Sign in / Sign up

Export Citation Format

Share Document