Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits

2019 ◽  
Vol 100-101 ◽  
pp. 113341
Author(s):  
Roger Goerl ◽  
Paulo Villa ◽  
Fabian L. Vargas ◽  
César A. Marcon ◽  
Nilberto H. Medina ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Test Procedure ◽  
Interference Test

scholarly journals Design of an Ultra-Low Voltage Bias Current Generator Highly Immune to Electromagnetic Interference

2021 ◽  
Vol 11 (1) ◽  
pp. 6
Author(s):  
Orazio Aiello
Keyword(s):  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Low Voltage ◽  
Current Source ◽  
Building Blocks ◽  
Cmos Technology ◽  
Threshold Region ◽  
Output Current ◽  
Current Generator ◽  
Technology Process

The paper deals with the immunity to Electromagnetic Interference (EMI) of the current source for Ultra-Low-Voltage Integrated Circuits (ICs). Based on the properties of IC building blocks, such as the current-splitter and current correlator, a novel current generator is conceived. The proposed solution is suitable to provide currents to ICs operating in the sub-threshold region even in the presence of an electromagnetic polluted environment. The immunity to EMI of the proposed solution is compared with that of a conventional current mirror and evaluated by analytic means and with reference to the 180 nm CMOS technology process. The analysis highlights how the proposed solution generates currents down to nano-ampere intrinsically robust to the Radio Frequency (RF) interference affecting the input of the current generator, differently to what happens to the output current of a conventional mirror under the same conditions.

Quantum near field probe for integrated circuits electromagnetic interference at wafer level

2021 ◽  
Author(s):  
Xiaohan Yin ◽  
Xinyu Liu ◽  
Bangxing Gu ◽  
Jingjing Zhang ◽  
Xiaochun Li ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Near Field ◽  
Wafer Level

Alternative Setup for Long-Duration Low-Duty-Cycle 600°C Ambient Testing of SiC Integrated Circuits

2021 ◽  
Vol 2021 (HiTEC) ◽  
pp. 000076-000082
Author(s):  
Alain Izadnegahdar ◽  
Stephanie L. Booth ◽  
David J. Spry ◽  
Philip G. Neudeck
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Design Feature ◽  
Maximum Deviation ◽  
Oxide Ceramic ◽  
Serial Port ◽  
Ramp Rate ◽  
Long Duration ◽  
Custom Made

Abstract A scalable, compact oven testbed system for simultaneously evaluating a multitude of high temperature integrated circuits (ICs) for prolonged operating times of up to 600 °C has been prototyped. The new testbed system enables long-duration high temperature testing in sufficient statistical quantities consistent with standard aerospace electronics engineering standards. This setup is comprised of multiple compact ovens housing chips or packages mounted to ceramic circuit boards. Each oven is a compact 15.2 cm length by 15.2 cm width by 12.7 cm depth with a maximum 400 Watts of heating power. The custom-made silicon oxide ceramic heating block inside each oven is based on a 3D printed design adapted for the easy insertion of the IC device under test (DUT). This innovative design provides the quick insertion of ICs with or without a ceramic package into a 600 °C environment by utilizing a movable 11.43 cm long ceramic substrate with electrical traces extending from the oven hot zone to external standard plastic-based board connectors. Another key oven design feature is the minimization of the DUT exposure to electromagnetic interference (EMI) by utilizing a filtered DC power source to reduce heating element noise. Additionally, the ovens can be configured in a parallel arrangement allowing global data monitoring over a single industrial RS422 serial port. This feature is important for scaling up to test multiple ICs semi-simultaneously. A USB serial port is provided to independently control the operating parameters of each oven such as the oven target temperature and oven ramp rate. The oven temperature can reach up to 600 °C with a confirmed +/− 4 °C maximum deviation across the test zone region. The ramp rate can be programmed from 1 °C/minute up to 10 °C/minute. Furthermore, a programmable switchboard is used to interface with the DUT. This switchboard comprises a National Instruments Peripheral Component Interconnect eXtension for Instrumentation (NI PXI) system and a breakout board to send and receive power, analog or digital test signals. By using this unique oven testbed system, a variety of ICs can now be tested in parallel using the same test components configured for a diverse set of requirements.

Anti-interference Test for the New SEP Instrument: CSAMT Study at Dongguashan Copper Mine, China

2017 ◽  
Vol 22 (4) ◽  
pp. 339-352
Author(s):  
Da Lei ◽  
Qing-yun Di ◽  
Jun-jie Wu ◽  
Xing-chun Wang ◽  
Yun-xiang Liu ◽  
...  
Keyword(s):  
Electromagnetic Interference ◽  
Signal To Noise Ratio ◽  
Field Work ◽  
Noisy Environment ◽  
Quality Of Data ◽  
Copper Mine ◽  
Filter Methods ◽  
Temporal Filter ◽  
Interference Test

In this paper, an independently developed device system called Surface Electromagnetic Prospecting (SEP) system was introduced through a CSAMT test at Dongguashan copper mine, east of Tonglin, Anhui province. In this area exists a strong electromagnetic interference including mineral and other human interferences, so there is a big challenge for electromagnetic exploration field work. In order to test the anti-interference ability of our system and ensure the quality of data, we applied both spectral analysis and temporal filter methods to improve the signal-to-noise ratio. After data processing, we obtained better results in our geophysical models and showed that the SEP system is able to obtain stable and reliable data in a complex and noisy environment. Consequently, the anti-interference capability of the SEP system is capable to undertake complicated exploration tasks.

Comparison among emission and susceptibility reduction techniques for electromagnetic interference in digital integrated circuits

2008 ◽  
Vol 39 (12) ◽  
pp. 1728-1735 ◽  
Author(s):  
Ali Alaeldine ◽  
Nicolas Lacrampe ◽  
Alexandre Boyer ◽  
Richard Perdriau ◽  
Fabrice Caignet ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Digital Integrated Circuits ◽  
Reduction Techniques
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