Quantum near field probe for integrated circuits electromagnetic interference at wafer level

2021 ◽  
Author(s):  
Xiaohan Yin ◽  
Xinyu Liu ◽  
Bangxing Gu ◽  
Jingjing Zhang ◽  
Xiaochun Li ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Near Field ◽  
Wafer Level

scholarly journals Evaluation of the Potential Electromagnetic Interference in Vertically Stacked 3D Integrated Circuits

2020 ◽  
Vol 10 (3) ◽  
pp. 748
Author(s):  
Dipesh Kapoor ◽  
Cher Ming Tan ◽  
Vivek Sangwan
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Electromagnetic Interference ◽  
High Speed ◽  
High Performance ◽  
Near Field ◽  
Three Dimensional ◽  
3D Ic ◽  
Three Dimensional Integrated Circuit ◽  
The Impact

Advancements in the functionalities and operating frequencies of integrated circuits (IC) have led to the necessity of measuring their electromagnetic Interference (EMI). Three-dimensional integrated circuit (3D-IC) represents the current advancements for multi-functionalities, high speed, high performance, and low-power IC technology. While the thermal challenges of 3D-IC have been studied extensively, the influence of EMI among the stacked dies has not been investigated. With the decreasing spacing between the stacked dies, this EMI can become more severe. This work demonstrates the potential of EMI within a 3D-IC numerically, and determines the minimum distance between stack dies to reduce the impact of EMI from one another before they are fabricated. The limitations of using near field measurement for the EMI study in stacked dies 3D-IC are also illustrated.

Electromagnetic Interference Shielding from the Back-Side Metallization of the Chip in Fan-Out Wafer Level Package

2021 ◽  
Vol 16 (5) ◽  
pp. 723-730
Author(s):  
Bo Kung Joung ◽  
Seong-Chul Kim ◽  
Key-One Ahn ◽  
Young-Ho Kim
Keyword(s):  
Electromagnetic Interference ◽  
Near Field ◽  
Thermal Characteristics ◽  
Shielding Effect ◽  
Back Side ◽  
Emi Shielding ◽  
Wafer Level ◽  
Design Flexibility ◽  
Board Level ◽  
Wafer Level Package

Shielding against electromagnetic interference (EMI) is becoming increasingly important as electronics such as wearable devices, sensors, IoT, and smartphones become smaller, faster, and weigh less. Package level EMI shielding has several advantages over board level shielding, such as a higher packaging density and better design flexibility. We developed a new fan-out package structure using back-side under bump metallurgy (UBM) and a substrate (or metal carrier) to improve the thermal characteristics and reduce die shift. UBM and the substrate (or metal carrier), which consisted of highly conductive metals, is effective for EMI shielding. We study EMI shielding effects of UBM and the substrate (or metal carrier). To determine the EMI shielding of the UBM structures, Ti (17 nm thick) and Cu (70 nm thick) were sequentially deposited on a glass substrate using a direct-current (DC) magnetron sputtering system. Then Cu was electroplated or Ni-P was electroless plated with various thicknesses up to 10 µm. Samples were measured under 100 MHz and 1 GHz with 0 dB conditions using a spectra analyzer, which is a near-field measurement equipment. In unpatterened UBM, increase in the Cu or Ni thickness resulted in further enhanced EMI shielding. When the thickness of Cu UBM or Ni-P UBM was bigger than 5 µm or 3 µm, respectively, the UBM exhibited good EMI shielding. A double layer of Cu strips was formed on the back side of the chip to enhance EMI shielding. The larger the overlap between the Cu strip and the upper and lower layers, the better the EMI shielding effect. When this overlap was larger than 0.5 mm, the EMI SE was similar to that of a single unpatterned Cu layer. We demonstrated good EMI shielding in the double-layered structure with a large overlap width between the upper and lower Cu strips, and expect better moisture release in such structures.

scholarly journals Design of an Ultra-Low Voltage Bias Current Generator Highly Immune to Electromagnetic Interference

2021 ◽  
Vol 11 (1) ◽  
pp. 6
Author(s):  
Orazio Aiello
Keyword(s):  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Low Voltage ◽  
Current Source ◽  
Building Blocks ◽  
Cmos Technology ◽  
Threshold Region ◽  
Output Current ◽  
Current Generator ◽  
Technology Process

The paper deals with the immunity to Electromagnetic Interference (EMI) of the current source for Ultra-Low-Voltage Integrated Circuits (ICs). Based on the properties of IC building blocks, such as the current-splitter and current correlator, a novel current generator is conceived. The proposed solution is suitable to provide currents to ICs operating in the sub-threshold region even in the presence of an electromagnetic polluted environment. The immunity to EMI of the proposed solution is compared with that of a conventional current mirror and evaluated by analytic means and with reference to the 180 nm CMOS technology process. The analysis highlights how the proposed solution generates currents down to nano-ampere intrinsically robust to the Radio Frequency (RF) interference affecting the input of the current generator, differently to what happens to the output current of a conventional mirror under the same conditions.

scholarly journals Assessment of the Immunity of Unshielded Multi-Core Integrated Circuits to Near-Field Injection

2009 ◽  
Author(s):  
Ali Alaeldine ◽  
Thomas Ordas ◽  
Richard Perdriau ◽  
Philippe Maurine ◽  
Mohamed Ramdani ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Near Field

scholarly journals A Survey of NFC Sensors Based on Energy Harvesting for IoT Applications

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3746 ◽  
Author(s):  
Antonio Lazaro ◽  
Ramon Villarino ◽  
David Girbau
Keyword(s):  
Energy Harvesting ◽  
Integrated Circuits ◽  
Radio Frequency Identification ◽  
Low Cost ◽  
Near Field ◽  
Wearable Sensors ◽  
Cold Chain ◽  
Iot Applications ◽  
Wide Range ◽  
Frequency Identification

In this article, an overview of recent advances in the field of battery-less near-field communication (NFC) sensors is provided, along with a brief comparison of other short-range radio-frequency identification (RFID) technologies. After reviewing power transfer using NFC, recommendations are made for the practical design of NFC-based tags and NFC readers. A list of commercial NFC integrated circuits with energy-harvesting capabilities is also provided. Finally, a survey of the state of the art in NFC-based sensors is presented, which demonstrates that a wide range of sensors (both chemical and physical) can be used with this technology. Particular interest arose in wearable sensors and cold-chain traceability applications. The availability of low-cost devices and the incorporation of NFC readers into most current mobile phones make NFC technology key to the development of green Internet of Things (IoT) applications.

scholarly journals FDTD Computation of Space/Time Integrated Electromagnetic Lagrangian: New Insights on Mutually Coupled Wide-band Antenna Design

2021 ◽  
Author(s):  
Debdeep Sarkar ◽  
Yahia Antar
Keyword(s):  
Electromagnetic Interference ◽  
Interference Mitigation ◽  
Near Field ◽  
Time Integration ◽  
Wide Band ◽  
Space Time ◽  
Ultra Wideband ◽  
Mimo Antennas ◽  
Electric And Magnetic Fields ◽  
Spatio Temporal

In this paper, we develop a formalism based on either spatially or temporally integrated electromagnetic (EM) Lagrangian, which provides new insights about the near-field reactive energy around generic antennas for arbitrary spatio-temporal excitation signals. Using electric and magnetic fields calculated via FDTD technique and interpolation routines, we compute and plot the normalized values of space/time integrated EM Lagrangian around antennas. While the time-integration of EM Lagrangian sheds light onto the spatial distribution of inductive/capacitive reactive energy, time-variation of spatially integrated EM Lagrangian can help in design of ultra-wideband (UWB) MIMO antennas with low mutual coupling. The EM Lagrangian approach can assist in design of energy harvesting and wireless power transfer systems, as well as for electromagnetic interference mitigation applications.

Alternative Setup for Long-Duration Low-Duty-Cycle 600°C Ambient Testing of SiC Integrated Circuits

2021 ◽  
Vol 2021 (HiTEC) ◽  
pp. 000076-000082
Author(s):  
Alain Izadnegahdar ◽  
Stephanie L. Booth ◽  
David J. Spry ◽  
Philip G. Neudeck
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Design Feature ◽  
Maximum Deviation ◽  
Oxide Ceramic ◽  
Serial Port ◽  
Ramp Rate ◽  
Long Duration ◽  
Custom Made

Abstract A scalable, compact oven testbed system for simultaneously evaluating a multitude of high temperature integrated circuits (ICs) for prolonged operating times of up to 600 °C has been prototyped. The new testbed system enables long-duration high temperature testing in sufficient statistical quantities consistent with standard aerospace electronics engineering standards. This setup is comprised of multiple compact ovens housing chips or packages mounted to ceramic circuit boards. Each oven is a compact 15.2 cm length by 15.2 cm width by 12.7 cm depth with a maximum 400 Watts of heating power. The custom-made silicon oxide ceramic heating block inside each oven is based on a 3D printed design adapted for the easy insertion of the IC device under test (DUT). This innovative design provides the quick insertion of ICs with or without a ceramic package into a 600 °C environment by utilizing a movable 11.43 cm long ceramic substrate with electrical traces extending from the oven hot zone to external standard plastic-based board connectors. Another key oven design feature is the minimization of the DUT exposure to electromagnetic interference (EMI) by utilizing a filtered DC power source to reduce heating element noise. Additionally, the ovens can be configured in a parallel arrangement allowing global data monitoring over a single industrial RS422 serial port. This feature is important for scaling up to test multiple ICs semi-simultaneously. A USB serial port is provided to independently control the operating parameters of each oven such as the oven target temperature and oven ramp rate. The oven temperature can reach up to 600 °C with a confirmed +/− 4 °C maximum deviation across the test zone region. The ramp rate can be programmed from 1 °C/minute up to 10 °C/minute. Furthermore, a programmable switchboard is used to interface with the DUT. This switchboard comprises a National Instruments Peripheral Component Interconnect eXtension for Instrumentation (NI PXI) system and a breakout board to send and receive power, analog or digital test signals. By using this unique oven testbed system, a variety of ICs can now be tested in parallel using the same test components configured for a diverse set of requirements.

scholarly journals Research on Anti-Radiation Noise Interference of High Definition Multimedia Interface Circuit Layout of a Laptop

Electronics ◽  
2020 ◽  
Vol 9 (3) ◽  
pp. 426 ◽  
Author(s):  
Wei Chien ◽  
Yu-Ting Cheng ◽  
Chiuan-Fu Hsiao ◽  
Kai-Xu Han ◽  
Chien-Ching Chiu
Keyword(s):  
Electromagnetic Interference ◽  
Printed Circuit Board ◽  
Near Field ◽  
Circuit Board ◽  
High Definition ◽  
Interface Circuit ◽  
Noise Interference ◽  
Multimedia Interface ◽  
Pcb Layout ◽  
Detection Instrument

In this paper, several aspects were studied, including the effect of an electromagnetic interference (EMI) noise interference strategy with High Definition Multimedia Interface (HDMI) 1.4, the analysis of a test on a printed circuit board (PCB) layout, and a comparison of the near field intensity radiation distribution between an EMI with a modified HDMI layout and an original layout. In this study, the near field detection instrument of APREL EM-ISight was employed to analyze the distribution of the strength of an electromagnetic noise field. After the practical validation, we found that the PCB layout complies with the standards after the modifications. Meanwhile, the PCB layout satisfies the requirements of most laptop HDMI-related products for EMI.

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