A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500°C

The study of magnetism without the involvement of transition metals or rare earth ions is considered the key to the fabrication of next-generation spintronic devices.

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Investigations on the Rare Earth Terpyridyl System

Zeitschrift für Naturforschung A ◽

10.1515/zna-1965-0611 ◽

1965 ◽

Vol 20 (6) ◽

pp. 835-837 ◽

Cited By ~ 12

Author(s):

Shyama P. Sinha

Keyword(s):

Rare Earth ◽

Room Temperature ◽

Free Ligand ◽

Ground Level ◽

Phosphorescence Spectrum ◽

Rare Earth Ions ◽

Luminescence Spectra ◽

Heterocyclic Ligands ◽

Phosphorescence Lifetime ◽

Room Temperature Luminescence

The room temperature luminescence spectra of the monoterpyridyl chelates of trivalent samarium, dysprosium and thulium have been studied in solid state by exciting with monochromatic radiation of 3200 Å. The spectra of these chelates show intra f → f fluorescent transitions of the chelated rare earth ions as well as the molecular band fluorescence. The “bottleneck” nature of the energy transfer from the nitrogen containing heterocyclic ligands to the coordinated rare earth ions is proposed. The fluorescence data of mono-terpyridyl chelates have been compared with those of bis-dipyridyl one.The phosphorescence spectrum of terpyridyl has also been investigated. The lowest triplet state of the free ligand is found at 22 940 cm-1 above the ground level. The phosphorescence lifetime of terpyridyl is about 2 sec

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Room-temperature luminescence from rare-earth ions implanted into Si nanocrystals

Philosophical Magazine B ◽

10.1080/13642810008209778 ◽

2000 ◽

Vol 80 (4) ◽

pp. 719-728 ◽

Cited By ~ 9

Author(s):

Giorgia Franzó ◽

Vincenzo Vinciguerra ◽

Francesco Priolo

Keyword(s):

Rare Earth ◽

Room Temperature ◽

Rare Earth Ions ◽

Si Nanocrystals ◽

Room Temperature Luminescence

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Rare-Earth-doped Laser Materials: Spectroscopy and Laser Properties

MRS Proceedings ◽

10.1557/opl.2012.1206 ◽

2012 ◽

Vol 1471 ◽

Author(s):

Larry D. Merkle

Keyword(s):

Rare Earth ◽

Room Temperature ◽

Liquid Nitrogen Temperature ◽

Spectroscopic Properties ◽

Rare Earth Ions ◽

Laser Materials ◽

Army Research Laboratory ◽

Trivalent Rare Earth ◽

Heavily Doped ◽

Rare Earth Doped

ABSTRACTTrivalent rare earth ions in crystalline or fiber hosts are among the most successful of laser materials, but new dopant-host combinations and more detailed understanding of existing materials continue to be needed. This paper presents a few examples from the work of our team at the Army Research Laboratory, highlighting the interrelation between spectroscopic properties and laser behavior. It focuses on bulk solids, though rare-earth-doped fiber lasers are also extremely important. One system discussed is Nd:YAG, particularly concentration quenching in heavily doped ceramic YAG. Spectroscopic properties of Yb:Y2O3 and Yb:Sc2O3 help to elucidate their laser performance. Spectra indicate that Er:YAG is more promising than Er:Sc2O3 for room temperature laser operation, but that the reverse is true for operation at and somewhat above liquid nitrogen temperature.

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Spectra Analysis of some Europium(III)/Terbium(III) Complexes

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.680.558 ◽

2016 ◽

Vol 680 ◽

pp. 558-561

Author(s):

Wei Yang ◽

Qiang Li ◽

Yan Yan Zhang ◽

Dan Yu Jiang ◽

Jin Feng Xia

Keyword(s):

Energy Transfer ◽

Rare Earth ◽

Fluorescence Spectra ◽

Room Temperature ◽

Rare Earth Ions ◽

Rare Earth Complexes ◽

Spectra Analysis ◽

Ultraviolet Spectra ◽

Hydroxy Quinoline

a series of Eu(III)/Tb(III) complexes with а-thenoyl trifluoroacetone (HTTA), 8-hydroxy quinoline complexes were synthesized. The UV and fluorescence spectra of these complexes at room temperature were characterized. The results revealed that different energy transfer between rare earth ions and ligands.Keywords rare earth complexes, ultraviolet spectra, fluorescence spectra

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Влияние замещения висмута празеодимом и лантаном на термоэлектрические свойства оксиселенидов BiCuSeO

Физика и техника полупроводников ◽

10.21883/ftp.2019.02.47103.8932 ◽

2019 ◽

Vol 53 (2) ◽

pp. 226

Author(s):

А.П. Новицкий ◽

И.А. Сергиенко ◽

С.В. Новиков ◽

К.В. Кусков ◽

Д.В. Лейбо ◽

...

Keyword(s):

Thermal Conductivity ◽

Electrical Resistivity ◽

Rare Earth ◽

Room Temperature ◽

Charge Carrier Concentration ◽

Rare Earth Ions ◽

Solid State Reaction Technique ◽

Substitution Level ◽

Temperature Dependences ◽

Electronic Configurations

AbstractThe results of investigating the thermoelectric properties of the bulk р -type oxyselenides Bi_1 –_ x Pr_ x CuSeO ( x = 0, 0.04, 0.08) and Bi_0.96La_0.04CuSeO obtained by the solid-state reaction technique are presented. The temperature dependences of the thermopower, electrical resistivity, and thermal conductivity are measured at temperatures from room temperature to 800 K. Over the whole temperature range, a decrease in the electrical resistivity and thermopower is observed with increasing substitution level, while the thermal conductivity is almost unaffected by the substitution of rare-earth elements for bismuth. Despite the nominal valence of Bi, La, and Pr being the same, the replacement of bismuth by rare-earth ions leads to an increase in the charge-carrier concentration, which may be caused by a difference in the electronic configurations of ions, resulting in a shift of the Fermi level to the valence band.

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Determination of the distribution coefficients of the rare earth ions Er3+ and Nd3+ in yttria-stabilized c-ZrO2 single crystals

Zeitschrift für Kristallographie - Crystalline Materials ◽

10.1524/zkri.1994.209.4.311 ◽

1994 ◽

Vol 209 (4) ◽

Author(s):

H. Römer ◽

K.-D. Luther ◽

W. Assmus

Keyword(s):

Rare Earth ◽

Single Crystals ◽

Zirconium Dioxide ◽

Room Temperature ◽

Distribution Coefficients ◽

Rare Earth Ions ◽

Cubic Phase ◽

The Rare Earth

AbstractWe describe investigations of growth of cubic zirconium dioxide single crystals doped with rare-earth ions. The cubic phase is stabilized down to room temperature by adding 12 mole% Y

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Carboxyl-functionalized ionic liquids: synthesis, characterization and synergy with rare-earth ions

Journal of Materials Chemistry C ◽

10.1039/c8tc00658j ◽

2018 ◽

Vol 6 (23) ◽

pp. 6270-6279 ◽

Cited By ~ 7

Author(s):

Talita Jordanna de Souza Ramos ◽

Guilherme Henrique Berton ◽

Tania Maria Cassol ◽

Severino Alves Júnior

Keyword(s):

Ionic Liquids ◽

Rare Earth ◽

Carboxylic Acids ◽

Room Temperature ◽

Rare Earth Ions ◽

Room Temperature Ionic Liquids ◽

First Time

Herein, we describe for the first time room temperature ionic liquids (RTILs) and imidazole-based cations with appended carboxylic acids as terminals, which are directly derived from the anhydrides.

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Ion Implanted Er and Tb in SiO2 for Electroluminescence in MOS Diodes

MRS Proceedings ◽

10.1557/proc-647-o4.1 ◽

2000 ◽

Vol 647 ◽

Author(s):

Ch. Buchal ◽

S. Coffa ◽

S. Wang ◽

R. Carius

Keyword(s):

Rare Earth ◽

Electric Fields ◽

Room Temperature ◽

Rare Earth Ions ◽

Oxide Semiconductor ◽

Impact Excitation ◽

Hot Electron ◽

Experimental Proof ◽

Light Generation ◽

Mos Structures

AbstractEfficient infra-red and visible electroluminescence(EL) has been obtained from implanted rare earth ions in the SiO2 of a silicon-metal-oxide-semiconductor (MOS) diode structure at room temperature. The rare earth ions are excited by the direct impact of hot electrons tunneling through the oxide at electric fields larger than 6 MV/cm. The internal quantum efficiencies of Er and Tb implanted MOS diodes are estimated to be 10 % and 3 %, respectively. The hgh quantum efficiency is due to the high impact excitation cross-section of more than 10− 15cm2. These observations on MOS structures are an experimental proof for efficient light generation by hot electron impact.

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Luminescence of Rare Earth Doped Porous Silicon

MRS Proceedings ◽

10.1557/proc-422-149 ◽

1996 ◽

Vol 422 ◽

Cited By ~ 1

Author(s):

T. Kimura ◽

I. Hosokawa ◽

Y. Nishida ◽

T. Dejima ◽

R. Saito ◽

...

Keyword(s):

Rare Earth ◽

Porous Silicon ◽

Room Temperature ◽

Luminescence Decay ◽

Rare Earth Ions ◽

Energy Transfer Mechanism ◽

Free Atmosphere ◽

Optical Activation ◽

P Type ◽

Rare Earth Doped

AbstractPhotoluminescence characteristics of porous silicon layers (PSLs) doped with Er or Yb ions are studied. 10μm thick PSLs with a luminescence centered at ∼ 0.8μm are formed by anodic etching of p-type silicon wafers of several Ω-cm resistivity. Rare-earth ions are electrochemically incorporated into PSLs. The Er3+-related luminescence at 1.54μm as well as the Yb3+-related luminescence at 1.0μm is observed at room temperature after annealing at high temperatures (>900°C). The Er-related luminescence is enhanced after annealing in O2, whereas the Yb3+-related luminescence needs oxygen-free atmosphere (H2) for the optical activation. The luminescence decay time of the rare earth ions as well as the host PSLs is measured and the energy transfer mechanism is discussed.

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