Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

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Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽

10.3390/surfaces4020013 ◽

2021 ◽

Vol 4 (2) ◽

pp. 106-114

Author(s):

Yannick Hermans ◽

Faraz Mehmood ◽

Kerstin Lakus-Wollny ◽

Jan P. Hofmann ◽

Thomas Mayer ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Fast Method ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Post Annealing ◽

Rf Signal ◽

First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

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Single-crystalline MgxZn1−xO (0≤x≤0.25) nanowires on glass substrates obtained by a hydrothermal method: growth, structure and electrical characteristics

Nanotechnology ◽

10.1088/0957-4484/16/8/019 ◽

2005 ◽

Vol 16 (8) ◽

pp. 1105-1111 ◽

Cited By ~ 25

Author(s):

Chia Ying Lee ◽

Tseung Yuen Tseng ◽

Seu Yi Li ◽

Pang Lin

Keyword(s):

Hydrothermal Method ◽

Electrical Characteristics ◽

Single Crystalline ◽

Glass Substrates ◽

Growth Structure

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Influence of Reactive Oxygen Gas on Sputtered-Vanadium Oxide Films under Post-Annealing in Vacuum

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.872.27 ◽

2021 ◽

Vol 872 ◽

pp. 27-31

Author(s):

S.Tipawan Khlayboonme ◽

Thowladda Warawoot

Keyword(s):

Vanadium Oxide ◽

Gas Flow ◽

Rf Magnetron Sputtering ◽

X Ray Diffraction ◽

Substrate Heating ◽

Glass Substrates ◽

Post Annealing ◽

Different Temperatures ◽

Vanadium Oxide Thin Films ◽

Reactive Rf Magnetron Sputtering

Vanadium oxide thin films were deposited on glass substrates by O2 reactive-RF magnetron sputtering from a vanadium (V) target without substrate-heating. The percentages of O2 gas were 10%, 7.5%, 6.0%, 5.0% and 2.5%. The total gas flow rate (O2/Ar) was kept at 25 sccm. As-deposited films were experienced post-annealing process at different temperatures and times. The crystallinity and chemical bonding states of films were examined by X-ray diffraction and Raman spectroscopy. The condition in annealing to active crystallinity depended on an earlier composition of the films. As O2-gas percentages were 10% and 7.5%, after annealing, the as-deposited VxOy films were transformed into crystalline V2O5 films. With decreasing in O2 percentage to 5.0% and 2.5%, the films were transformed into V2O3 and VO films, respectively. The films deposited with 6.0% O2 were crystallized to VO2 with phase B after annealing with 500 °C 15 h. By applying a longer time to 30 h at the high temperature 500 °C in annealing, VO2 films revealed only phase M formation.

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Direct writing of large-area micro/nano-structural arrays on single crystalline germanium substrates using femtosecond lasers

Applied Physics Letters ◽

10.1063/1.4986784 ◽

2017 ◽

Vol 110 (25) ◽

pp. 251901 ◽

Cited By ~ 6

Author(s):

Lin Li ◽

Jun Wang

Keyword(s):

Femtosecond Lasers ◽

Direct Writing ◽

Large Area ◽

Single Crystalline ◽

Germanium Substrates ◽

Crystalline Germanium

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Single Crystalline Germanium-Lead Formed by Laser-Induced Epitaxy

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0331606jss ◽

2016 ◽

Vol 5 (6) ◽

pp. P353-P360 ◽

Cited By ~ 4

Author(s):

Qian Zhou ◽

Edwin Bin Leong Ong ◽

Sin Leng Lim ◽

Saumitra Vajandar ◽

Thomas Osipowicz ◽

...

Keyword(s):

Single Crystalline ◽

Crystalline Germanium

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Numerical Simulation and Prediction of Surface Heterogeneity in Diamond Turning of Single-Crystalline Germanium

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.329.397 ◽

2007 ◽

Vol 329 ◽

pp. 397-402

Author(s):

Ji Wang Yan ◽

Yu Feng Fan ◽

Nobuhito Yoshihara ◽

Tsunemoto Kuriyagawa ◽

Shoji Yokoyama

Keyword(s):

Numerical Simulation ◽

Simulation Model ◽

Surface Heterogeneity ◽

Diamond Turning ◽

Tool Geometry ◽

Single Crystalline ◽

Machining Conditions ◽

Boundary Change ◽

Systems Simulation ◽

Crystalline Germanium

This paper deals with the mechanism of surface heterogeneity due to crystallographic anisotropy effects in diamond turning of single-crystalline germanium. A microplasticity-based numerical simulation model was proposed, in which the effects of tool geometry and machining conditions can be involved. Two coefficients were introduced to compensate the Schmid factors of two different types of symmetrical slip systems. Simulation of ductile machinability was conducted on two crystallographic planes (100) and (111), and the simulation results were consistent with the experimental results. It was indicated that the simulation model can be used to predict the brittle-ductile boundary change with machining conditions and crystal orientations of germanium.

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