Scallop-shaped p-type FinFETs with improved short-channel effects immunity and driving current

This paper presents an evaluation of omega-gate nanowire n- and p-type SOI MOSFETs performance focusing on the main analog figures of merit. The different channel widths (WNW) and channel lengths (L) were also evaluated. These devices presented values of subthreshold slope near the theoretical limit at room temperature (60 mV/dec) and in the worst case a DIBL value smaller than 70 mV/V showing its immunity to short channel effects (SCEs) in the range studied. The narrowest device showed great electrostatic coupling, improving transconductance (gm), presenting an unit gain frequency over 200 GHz and intrinsic voltage gain over 80 dB. These values suggests that this device is capable of achieving good performance on new applications such as 5G communications and Internet-of-Things (IoT).

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Short-Channel Effects in 4H-SiC MOSFETs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.821 ◽

2005 ◽

Vol 483-485 ◽

pp. 821-824

Author(s):

Masato Noborio ◽

Y. Kanzaki ◽

Jun Suda ◽

Tsunenobu Kimoto ◽

Hiroyuki Matsunami

Keyword(s):

Threshold Voltage ◽

Empirical Relationship ◽

Device Simulation ◽

Oxide Thickness ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Channel Lengths ◽

P Type

Short-channel effects in SiC MOSFETs have been investigated. Planar MOSFETs with various channel lengths have been fabricated on p-type 4H-SiC (0001), (000-1) and (11-20) faces.^Short-channel effects such as punchthrough behavior, decrease of threshold voltage and deterioration of subthreshold characteristics are observed. Furthermore, the critical channel lengths below which short-channel effects occur are analyzed as a function of p-body doping and oxide thickness by using device simulation. The critical channel lengths in the fabricated SiC MOSFETs are in agreement with those obtained from the device simulation. The results are also in agreement with the empirical relationship for Si MOSFETs.

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Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET

Applied Sciences ◽

10.3390/app11030894 ◽

2021 ◽

Vol 11 (3) ◽

pp. 894

Author(s):

Hyeonjae Won ◽

Myounggon Kang

Keyword(s):

Circuit Simulation ◽

Structural Aspect ◽

Short Channel Effects ◽

Total Ionizing Dose ◽

Short Channel ◽

Dose Effects ◽

Channel Effects ◽

Inverter Circuit ◽

P Type ◽

Total Ionizing Dose Effects

In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices. Similar to n-type devices, p-type NW-FETs are less affected than FinFETs by the TID effect. For the inverter TID circuit simulation, both n- and p-types of FinFET and NW-FET were analyzed regarding the TID effect. The inverter operation considering the TID effect was verified using the Berkeley short-channel insulated-gate FET model (BSIM) common multi-gate (CMG) parameters. In addition, an inverter circuit composed of the NW-FET exhibited a smaller change by the TID than that of an inverter circuit composed of the FinFET. Therefore, the gate controllability of the gate-all-around (GAA) device had an excellent tolerance to not only short-channel effects (SCE) but also TID effects.

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