Dependence of spectral factor on angle of incidence for monocrystalline silicon based photovoltaic solar panel

2021 ◽  
Author(s):  
Manoj Kumar Sharma ◽  
Jishnu Bhattacharya
Keyword(s):  
Monocrystalline Silicon ◽  
Solar Panel ◽  
Angle Of Incidence ◽  
Silicon Based ◽  
Spectral Factor

scholarly journals Solar Tracker

2020 ◽  
Vol 2 (1) ◽  
pp. 59-65
Author(s):  
Irfan Danial Hashim ◽  
Ammar Asyraf Ismail ◽  
Muhammad Arief Azizi
Keyword(s):  
Fossil Fuels ◽  
Electrical Energy ◽  
Maximum Amount ◽  
Solar Panel ◽  
Angle Of Incidence ◽  
The Sun ◽  
Continuous Change ◽  
The Earth ◽  
Solar Tracker ◽  
Rotation Of The Earth

Solar Tracker The generation of power from the reduction of fossil fuels is the biggest challenge for the next half century. The idea of converting solar energy into electrical energy using photovoltaic panels holds its place in the front row compared to other renewable sources. But the continuous change in the relative angle of the sun with reference to the earth reduces the watts delivered by solar panel. Conventional solar panel, fixed with a certain angle, limits their area of exposure from the sun due to rotation of the earth. Output of the solar cells depends on the intensity of the sun and the angle of incidence. To solve this problem, an automatic solar cell is needed, where the Solar Tracker will track the motion of the sun across the sky to ensure that the maximum amount of sunlight strikes the panels throughout the day. By using Light Dependent Resistors, it will navigate the solar panel to get the best angle of exposure of light from the sun.

Study on polishing slurry waste reduction in polishing monocrystalline silicon based on ultrasonic atomization

2019 ◽  
Vol 233 ◽  
pp. 1-12 ◽  
Author(s):  
Tianqi Zhang ◽  
Yu Zhao ◽  
Tao Yu ◽  
Tianbiao Yu ◽  
Jiashun Shi ◽  
...  
Keyword(s):  
Monocrystalline Silicon ◽  
Waste Reduction ◽  
Ultrasonic Atomization ◽  
Silicon Based

scholarly journals Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon

2021 ◽  
Vol 2021 ◽  
pp. 1-17
Author(s):  
Ying Chang ◽  
Saisai He ◽  
Mingyuan Sun ◽  
Aixia Xiao ◽  
Jiaxin Zhao ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Theoretical Model ◽  
Scattered Light ◽  
Industrial Applications ◽  
Monocrystalline Silicon ◽  
Raman Intensity ◽  
Angle Rotation ◽  
Polarized Raman ◽  
Silicon Based ◽  
Quantified Analysis

Monocrystalline silicon (c-Si) is still an important material related to microelectronics/optoelectronics. The nondestructive measurement of the c-Si material and its microstructure is commonly required in scientific research and industrial applications, for which Raman spectroscopy is an indispensable method. However, Raman measurements based on the specific fixed Raman geometry/polarization configuration are limited for the quantified analysis of c-Si performance, which makes it difficult to meet the high-end requirements of advanced silicon-based microelectronics and optoelectronics. Angle-resolved Raman measurements have become a new trend of experimental analysis in the field of materials, physics, mechanics, and optics. In this paper, the characteristics of the angle-resolved polarized Raman scattering of c-Si under the in-axis and off-axis configurations are systematically analyzed. A general theoretical model of the angle-resolved Raman intensity is established, which includes several alterable angle parameters, including the inclination angle, rotation angle of the sample, and polarization directions of the incident laser and scattered light. The diversification of the Raman intensity is given at different angles for various geometries and polarization configurations. The theoretical model is verified and calibrated by typical experiments. In addition, this work provides a reliable basis for the analysis of complex polarized Raman experiments on silicon-based structures.

Monocrystalline silicon-based tandem configuration for solar-to-hydrogen conversion

2020 ◽  
Vol 116 ◽  
pp. 107926
Author(s):  
Duy Phong Pham ◽  
Sunhwa Lee ◽  
Anh Huy Tuan Le ◽  
Eun-Chel Cho ◽  
Young Hyun Cho ◽  
...  
Keyword(s):  
Monocrystalline Silicon ◽  
Tandem Configuration ◽  
Silicon Based

Porous silicon-based microtexturing of textured monocrystalline silicon solar cells

2010 ◽  
Vol 8 (6) ◽  
pp. 1869-1873 ◽  
Author(s):  
Moncef Saadoun ◽  
Mohamed Fethi Boujmil ◽  
Selma Aouida ◽  
Mohamed Ben Rabha ◽  
Brahim Bessaïs
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Monocrystalline Silicon ◽  
Silicon Solar Cells ◽  
Silicon Based

Drilling of Silicon Based Solar Panels: A Review

2010 ◽  
Author(s):  
W. L. Cong ◽  
Q. Feng ◽  
Z. J. Pei
Keyword(s):  
Mechanical Properties ◽  
Solar Cells ◽  
Solar Energy ◽  
Electrical Contacts ◽  
Solar Panel ◽  
Back Side ◽  
Solar Panels ◽  
Front Side ◽  
Machining Processes ◽  
Silicon Based

Solar panels have been developed to convert the solar energy to electricity. Since most solar panels are silicon based, they inherit the mechanical properties of silicon, such as brittleness and hardness. These properties might lead to cracking in workpieces and low tool lives in traditional machining processes. In solar panel manufacturing, to increase the efficiency of solar cells, electrical contacts on the front side of the panel need to be connected to those on the back side. Therefore, holes of different sizes are required to drill in silicon solar panels for certain designs. This paper reviews the literature on different drilling processes for silicon solar panels and summarizes merits, shortcomings, and special characteristics of each method.

scholarly journals Estimation of the Hourly Global Solar Irradiation on the Tilted and Oriented Plane of Photovoltaic Solar Panels Applied to Greenhouse Production

Agronomy ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 495
Author(s):  
Francisco J. Diez ◽  
Andrés Martínez-Rodríguez ◽  
Luis M. Navas-Gracia ◽  
Leticia Chico-Santamarta ◽  
Adriana Correa-Guimaraes ◽  
...  
Keyword(s):  
Solar Radiation ◽  
Time Of Day ◽  
Solar Panel ◽  
Solar Irradiation ◽  
Angle Of Incidence ◽  
Solar Panels ◽  
Greenhouse Production ◽  
Anisotropic Models ◽  
Diffuse Solar Radiation ◽  
Global Solar Irradiation

Agrometeorological stations have horizontal solar irradiation data available, but the design and simulation of photovoltaic (PV) systems require data about the solar panel (inclined and/or oriented). Greenhouses for agricultural production, outside the large protected production areas, are usually off-grid; thus, the solar irradiation variable on the panel plane is critical for an optimal PV design. Modeling of solar radiation components (beam, diffuse, and ground-reflected) is carried out by calculating the extraterrestrial solar radiation, solar height, angle of incidence, and diffuse solar radiation. In this study, the modeling was done using Simulink-MATLAB blocks to facilitate its application, using the day of the year, the time of day, and the hourly horizontal global solar irradiation as input variables. The rest of the parameters (i.e., inclination, orientation, solar constant, albedo, latitude, and longitude) were fixed in each block. The results obtained using anisotropic models of diffuse solar irradiation of the sky in the region of Castile and León (Spain) showed improvements over the results obtained with isotropic models. This work enables the precise estimation of solar irradiation on a solar panel flexibly, for particular places, and with the best models for each of the components of solar radiation.

Raman Analysis of the Silicon Wafer Scratched by Single Point Diamond

2011 ◽  
Vol 175 ◽  
pp. 82-86
Author(s):  
Zhuo Chen ◽  
Xin Wei ◽  
Xiao Zhu Xie ◽  
Qing Lei Ren
Keyword(s):  
Mathematical Model ◽  
Phase Transformation ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Applied Load ◽  
Single Point ◽  
Monocrystalline Silicon ◽  
Raman Analysis ◽  
Silicon Based ◽  
The Relationship

This paper presents a Raman analysis of the monocrystalline silicon wafer scratched by single point diamond. Si-III and Si-XII phases are found to be existence in the scratched silicon surface, which is the result of the phase transformation. A mathematical model was developed to calculating the molar concentration of phase of the silicon. Based on the mathemathical model, the relationship between the molar concentrations of the Si-I phase and the applied load was analysied.

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