Fabrication of porous silicon filled Pd/SiC nanocauliflower thin films for high performance H2 gas sensor

2018 ◽  
Vol 264 ◽  
pp. 10-19 ◽  
Author(s):  
Arvind Kumar ◽  
Ashwani Kumar ◽  
Ramesh Chandra
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Gas Sensor ◽  
High Performance

Multifunctional zinc oxide thin films for high-performance UV photodetectors and nitrogen dioxide gas sensors

RSC Advances ◽  
2016 ◽  
Vol 6 (31) ◽  
pp. 25641-25650 ◽  
Author(s):  
S. K. Shaikh ◽  
V. V. Ganbavle ◽  
S. I. Inamdar ◽  
K. Y. Rajpure
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Nitrogen Dioxide ◽  
Gas Sensor ◽  
Gas Sensors ◽  
High Performance ◽  
Zno Thin Film ◽  
Uv Photodetector ◽  
Uv Photodetectors

Multifunctional use of ZnO thin film as NO2 gas sensor and UV photodetector.

Development of Pd-Pt functionalized high performance H2 gas sensor based on silicon carbide coated porous silicon for extreme environment applications

2019 ◽  
Vol 283 ◽  
pp. 373-383 ◽  
Author(s):  
Satyendra Mourya ◽  
Arvind Kumar ◽  
Jyoti Jaiswal ◽  
Gaurav Malik ◽  
Brijesh Kumar ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Gas Sensor ◽  
High Performance ◽  
Extreme Environment

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

In-situ growth of high-performance (Ag, Sn) co-doped CoSb3 thermoelectric thin films

2021 ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
In Situ Growth ◽  
Thermoelectric Thin Films ◽  
Co Doped

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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