Ultrasensitive gas sensor based on nanocube In2O3-CNH composite at low operating temperature

2022 ◽  
Vol 354 ◽  
pp. 131224
Author(s):  
Ming Zhou ◽  
Yu Yao ◽  
Yutong Han ◽  
Lili Xie ◽  
Xueling Zhao ◽  
...  
2005 ◽  
Vol 486-487 ◽  
pp. 485-488 ◽  
Author(s):  
Hong Quang Nguyen ◽  
Mai Van Trinh ◽  
Jeung Soo Huh

The effect of operating temperature on characteristics of single-walled carbon nanotubes (SWNT) based gas sensor was investigated. SWNT-based sensor was fabricated from SWNT powder (Iljin Nanotech, Korea) by screen-printing method. SWNT powder (30 mg, AP grade) was dispersed into 0.78 gram a-terpineol (Aldrich) by ultrasonic vibration for 1 hour then stirred manually for 1 hour to increase adhesion. From this condensed solution, a thick film of SWNT was printed onto alumina substrates. The film then was sintered at 300oC for 2 hours to remove residual impurities. Upon exposure to some gases such as nitrogen, ammonia or nitric oxide, resistance of the sensor dramatically changes due to gas adsorption. In our experiments, SWNT-based sensor was employed to detect NH3 gas in N2 ambience. After saturated of N2, the sensor exposes to NH3 with various concentrations (from 5 ppm to 100 ppm, diluted by N2 as carrier gas). This sensor exhibits a fast response, high sensitivity but slow recovery at room temperature. By heating at high temperature and increasing the flow-rate of carrier gas, NH3 gas desorbs easily and recovery of the sensor improved. The heating also influenced the characteristics of sensors such as response and reproducibility. Other special changes in electric property of SWNT-based sensor caused by heating are also discussed.


2016 ◽  
Vol 34 (1) ◽  
pp. 204-211 ◽  
Author(s):  
Vishal V. Burungale ◽  
Rupesh S. Devan ◽  
Sachin A. Pawar ◽  
Namdev S. Harale ◽  
Vithoba L. Patil ◽  
...  

AbstractRapid NO2 gas sensor has been developed based on PbS nanoparticulate thin films synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method at different precursor concentrations. The structural and morphological properties were investigated by means of X-ray diffraction and field emission scanning electron microscope. NO2 gas sensing properties of PbS thin films deposited at different concentrations were tested. PbS film with 0.25 M precursor concentration showed the highest sensitivity. In order to optimize the operating temperature, the sensitivity of the sensor to 50 ppm NO2 gas was measured at different operating temperatures, from 50 to 200 °C. The gas sensitivity increased with an increase in operating temperature and achieved the maximum value at 150 °C, followed by a decrease in sensitivity with further increase of the operating temperature. The sensitivity was about 35 % for 50 ppm NO2 at 150 °C with rapid response time of 6 s. T90 and T10 recovery time was 97 s at this gas concentration.


2018 ◽  
Author(s):  
Sachin Kumar ◽  
David Pugh ◽  
Daipayan Dasgupta ◽  
Neha Sarin ◽  
Ivan Parkin ◽  
...  

2020 ◽  
Vol 312 ◽  
pp. 127954 ◽  
Author(s):  
Feifei Yin ◽  
Yang Li ◽  
Wenjing Yue ◽  
Song Gao ◽  
Chunwei Zhang ◽  
...  

Sensors ◽  
2018 ◽  
Vol 18 (8) ◽  
pp. 2483 ◽  
Author(s):  
Siti Mohd Chachuli ◽  
Mohd Hamidon ◽  
Md. Mamat ◽  
Mehmet Ertugrul ◽  
Nor Abdullah

High demand of semiconductor gas sensor works at low operating temperature to as low as 100 °C has led to the fabrication of gas sensor based on TiO2 nanoparticles. A sensing film of gas sensor was prepared by mixing the sensing material, TiO2 (P25) and glass powder, and B2O3 with organic binder. The sensing film was annealed at temperature of 500 °C in 30 min. The morphological and structural properties of the sensing film were characterized by field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The gas sensor was exposed to hydrogen with concentration of 100–1000 ppm and was tested at different operating temperatures which are 100 °C, 200 °C, and 300 °C to find the optimum operating temperature for producing the highest sensitivity. The gas sensor exhibited p-type conductivity based on decreased current when exposed to hydrogen. The gas sensor showed capability in sensing low concentration of hydrogen to as low as 100 ppm at 100 °C.


2018 ◽  
Vol 81 (1) ◽  
pp. 10101 ◽  
Author(s):  
Sonik Bhatia ◽  
Neha Verma ◽  
Munish Aggarwal

Nowadays, for environmental protection, the use of portable gas sensor is essential to detect toxic gases. To control this problem of hazardous gases, metal oxide based sensors plays a vital role. In this recent study, Indium (2 at.wt.%) doped ZnO films has been prepared by sol gel spin coating and thermal evaporation techniques on glass substrates. To enhance the sensing properties, indium (In) was used as dopant and their annealing effect of temperature was observed. Thermal properties have shown the fruitful result that prepared films are useful for the fabrication of solar cell. Electrical properties revealed that capacitance and dielectric constant decreases with increase in frequency. X-ray Diffraction showed hexagonal wurtzite structure highly oriented along (1 0 1) plane. Field emission scanning electron microscope of these synthesis films prepared by different have shown the morphology as nanospheres having size of the order of 40–60 nm. 2.0 at.% of indium as modifier resulted in highest response and selectivity towards 5 ppm of NO2 gas at different operating temperature (50–200 °C). Highest sensitivity was obtained at operating temperature of 150 °C. Prepared films have quick response and recovery time in the range of 14–27 s and 67–63 s. The highest response and recovery time of gas sensor was explained by valence ion mechanism.


Author(s):  
M’hammed Benali Benadjemia ◽  
Mourad Lounis ◽  
Mohamed Miloudi ◽  
Nabil Beloufa

Abstract This paper contains experimental research to minimize the basic limits of the SnO2 semiconductor oxide gas sensor. The operating temperature is high. In addition, their selectivity diminishes with gasses having the same chemical behavior. An experimental methodology is presented to overcome the difficulties of these metal oxides. The efficiency of the gas sensors made of Ag continuously doped at room temperature is excellent. At the end of the testing processes and security measures supplied, laboratory tests and experiments will be conducted to guarantee the acceptability of the planned study.


Nanomaterials ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 98
Author(s):  
Muhammad Haroon Rashid ◽  
Ants Koel ◽  
Toomas Rang

During the last few years graphene has emerged as a potential candidate for electronics and optoelectronics applications due to its several salient features. Graphene is a smart material that responds to any physical change in its surrounding environment. Graphene has a very low intrinsic electronic noise and it can detect even a single gas molecule in its proximity. This property of graphene makes is a suitable and promising candidate to detect a large variety of organic/inorganic chemicals and gases. Typical solid state gas sensors usually requires high operating temperature and they cannot detect very low concentrations of gases efficiently due to intrinsic noise caused by thermal motion of charge carriers at high temperatures. They also have low resolution and stability issues of their constituent materials (such as electrolytes, electrodes, and sensing material itself) in harsh environments. It accelerates the need of development of robust, highly sensitive and efficient gas sensor with low operating temperature. Graphene and its derivatives could be a prospective replacement of these solid-state sensors due to their better electronic attributes for moderate temperature applications. The presence of extremely low intrinsic noise in graphene makes it highly suitable to detect a very low concentration of organic/inorganic compounds (even a single molecule ca be detected with graphene). In this article, we simulated a novel graphene nanoribbon based field effect transistor (FET) and used it to detect propane and butane gases. These are flammable household/industrial gases that must be detected to avoid serious accidents. The effects of atmospheric oxygen and humidity have also been studied by mixing oxygen and water molecules with desired target gases (propane and butane). The change in source-to-drain current of FET in the proximity of the target gases has been used as a detection signal. Our simulated FET device showed a noticeable change in density of states and IV-characteristics in the presence of target gas molecules. Nanoscale simulations of FET based gas sensor have been done in Quantumwise Atomistix Toolkit (ATK). ATK is a commercially available nanoscale semiconductor device simulator that is used to model a large variety of nanoscale devices. Our proposed device can be converted into a physical device to get a low cost and small sized integrated gas sensor.


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