The band gap and band offset in ultrathin oxide–semiconductor heterostructures

2010 ◽  
Vol 47 (3) ◽  
pp. 369-376 ◽  
Author(s):  
D. Schmeißer ◽  
K. Henkel ◽  
M. Bergholz ◽  
M. Tallarida
Keyword(s):  
Band Gap ◽  
Semiconductor Heterostructures ◽  
Oxide Semiconductor ◽  
Band Offset ◽  
Ultrathin Oxide

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride

2019 ◽  
Vol 7 (16) ◽  
pp. 4817-4821 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
High Performance ◽  
Room Temperature ◽  
Band Offset ◽  
Valence Band Offset ◽  
Co Doping ◽  
Tin Telluride ◽  
Structure Engineering

Resonance states due to Bi and In co-doping, band gap enlargement, and a reduced valence-band offset in SnTe lead to a record high room-temperature ZT.

scholarly journals Influence of Ag-Dopant on Structural Optical and Electrical Properties of Cu(1-x)AgxO Thin Films Prepared By Chemical Spray Pyrolysis Technique

2018 ◽  
Vol 4 (5) ◽  
pp. 542-545 ◽  
Author(s):  
R. Shabu ◽  
A. Moses Ezhil Raj
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Optical Band Gap ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Oxide Semiconductor ◽  
Chemical Spray Pyrolysis ◽  
Chemical Spray Pyrolysis Technique ◽  
Chemical Spray

As major attention has been paid to transition metal oxide semiconductor suitable for solar cell, photo detector and gas sensor, present study embark on the structural, optical and electrical characterization of Ag doped CuO thin films prepared using chemical spray pyrolysis technique at the constant substrate temperature of 350 �C. For Ag doping, various concentrations of silver acetate (0.5-3.0 wt.%) was used in the sprayed precursor solution. Confirmed monoclinic lattice shows the tenorite phase formation of CuO in the pure and Ag doped films. The optical band gap of the films was in the range of 2.4 -3.4 eV. A minimum resistivity of 0.0017x103 ohmcm was achieved in the 0.5 wt.% Ag doped film, and its optical band gap was 2.74 eV.

Strong Band Gap Blueshift in Copper (I) Oxide Semiconductor via Bioinspired Route

2020 ◽  
Vol 30 (13) ◽  
pp. 1910405 ◽  
Author(s):  
Iryna Polishchuk ◽  
Nuphar Bianco‐Stein ◽  
Arad Lang ◽  
Mariam Kurashvili ◽  
Maytal Caspary Toroker ◽  
...  
Keyword(s):  
Band Gap ◽  
Oxide Semiconductor ◽  
Strong Band

Correction: Electronic-Field Control of Two-Dimensional Electrons in Polymer-Gated-Oxide Semiconductor Heterostructures

2010 ◽  
Vol 22 (14) ◽  
pp. n/a-n/a ◽  
Author(s):  
Masaki Nakano ◽  
Atsushi Tsukazaki ◽  
Akira Ohtomo ◽  
Kazunori Ueno ◽  
Shunsuke Akasaka ◽  
...  
Keyword(s):  
Semiconductor Heterostructures ◽  
Oxide Semiconductor ◽  
Two Dimensional ◽  
Field Control ◽  
Electronic Field

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation

2009 ◽  
Vol 615-617 ◽  
pp. 557-560 ◽  
Author(s):  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offset ◽  
Mos Capacitors ◽  
Conduction Band Offset ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability ◽  
Mos Gate

The oxide reliability of metal-oxide-semiconductor (MOS) capacitors on 4H-SiC(000-1) carbon face was investigated. The gate oxide was fabricated by using N2O nitridation. The effective conduction band offset (Ec) of MOS structure fabricated by N2O nitridation was increased to 2.2 eV compared with Ec = 1.7 eV for pyrogenic oxidation sample of. Furthermore, significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. It is suggested that the N2O nitridation as a method of gate oxide fabrication satisfies oxide reliability on 4H-SiC(000-1) carbon face MOSFETs.

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