Electrical characteristics of flexible ZnO thin-film transistors annealed by microwave irradiation

2014 ◽  
Vol 32 (6) ◽  
pp. 062203 ◽  
Author(s):  
Sukhyung Park ◽  
Kyoungah Cho ◽  
Kyungwhan Yang ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Microwave Irradiation ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Electrical Characteristics

scholarly journals Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors

2016 ◽  
Vol 56 ◽  
pp. 29-33 ◽  
Author(s):  
M. Estrada ◽  
M. Rivas ◽  
I. Garduño ◽  
F. Avila-Herrera ◽  
A. Cerdeira ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Electrical Characteristics

scholarly journals Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1186
Author(s):  
Soo Cheol Kang ◽  
So Young Kim ◽  
Sang Kyung Lee ◽  
Kiyung Kim ◽  
Billal Allouche ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxygen Vacancies ◽  
Drain Current ◽  
Vacuum Treatment ◽  
Trap Level ◽  
Zno Thin Film ◽  
Electrical Characteristics ◽  
Bias Stress ◽  
Trap Assisted Tunneling

The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (ID) via trap-assisted tunneling when the gate voltage (VG) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient. We determined that the trap-induced Schottky barrier lowering reduced a drain barrier when the drain was subjected to negative bias stress. Consequentially, the field effect mobility increased from 8.5 m2 V−1·s−1 to 8.9 m2 V−1·s−1 and on-current increased by ~13%.

Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO Thin-Film Transistors

2008 ◽  
Vol 47 (4) ◽  
pp. 2848-2853 ◽  
Author(s):  
Kariyadan Remashan ◽  
Dae-Kue Hwang ◽  
Seong-Ju Park ◽  
Jae-Hyung Jang
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Electrical Characteristics
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