scholarly journals Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors

2016 ◽  
Vol 56 ◽  
pp. 29-33 ◽  
Author(s):  
M. Estrada ◽  
M. Rivas ◽  
I. Garduño ◽  
F. Avila-Herrera ◽  
A. Cerdeira ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Electrical Characteristics

scholarly journals Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1186
Author(s):  
Soo Cheol Kang ◽  
So Young Kim ◽  
Sang Kyung Lee ◽  
Kiyung Kim ◽  
Billal Allouche ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxygen Vacancies ◽  
Drain Current ◽  
Vacuum Treatment ◽  
Trap Level ◽  
Zno Thin Film ◽  
Electrical Characteristics ◽  
Bias Stress ◽  
Trap Assisted Tunneling

The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (ID) via trap-assisted tunneling when the gate voltage (VG) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient. We determined that the trap-induced Schottky barrier lowering reduced a drain barrier when the drain was subjected to negative bias stress. Consequentially, the field effect mobility increased from 8.5 m2 V−1·s−1 to 8.9 m2 V−1·s−1 and on-current increased by ~13%.

scholarly journals Modeling of Electronic Transport through Metal/Polymer Interfaces in Thin Film Transistors

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
S. Alborghetti ◽  
P. Stamenov
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Thin Film Transistors ◽  
Interface Energy ◽  
Polymer Interfaces ◽  
Electrical Characteristics ◽  
Carrier Injection ◽  
Organic Thin Film ◽  
Metal Organic ◽  
Output Characteristics

We report on the modeling of electrical characteristics and contact-related effects of organic thin film transistors. An equivalent circuit is employed to simulate the electrical behavior of the devices. We suggest that, at low temperature, tunneling is the dominant mechanism of charge carrier injection, originating the nonlinearities often observed in these devices. The temperature dependence of the output characteristics is due to the fraction of carriers that are injected, via the competing mechanism of thermal activation, above the interface energy barrier at metal/organic contacts. The model successfully reproduces the electrical characteristics of P3HT polymeric transistors and allows for the decoupling and the study of the temperature dependence of the charge conduction through the organic channel.

Temperature dependence of the electrical characteristics of low-temperature processed zinc oxide thin film transistors

2014 ◽  
Vol 573 ◽  
pp. 18-21 ◽  
Author(s):  
M. Estrada ◽  
G. Gutierrez-Heredia ◽  
A. Cerdeira ◽  
J. Alvarado ◽  
I. Garduño ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Zinc Oxide Thin Film

Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO Thin-Film Transistors

2008 ◽  
Vol 47 (4) ◽  
pp. 2848-2853 ◽  
Author(s):  
Kariyadan Remashan ◽  
Dae-Kue Hwang ◽  
Seong-Ju Park ◽  
Jae-Hyung Jang
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Electrical Characteristics
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