Effect of graded InGaN drain region and ’In’ fraction in InGaN channel on performances of InGaN tunnel field-effect transistor
2017 ◽
Vol 112
◽
pp. 671-679
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Keyword(s):
2010 ◽
Vol E93-C
(5)
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pp. 540-545
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Keyword(s):
2021 ◽
Vol 9
◽
pp. 286-294
Keyword(s):