Realization of atomically flat steps and terraces like surface of SrTiO3 (001) single crystal by hot water etching and high temperature annealing

High quality homo-epitaxial ZnO films were grown on Zn -terminated surfaces of ZnO (0001) single-crystal substrates with high-temperature annealing and Ar + ion etching. These films were prepared by low-pressure MO-CVD using zinc acetylacetonate ( C 5 H 7 O 2)2 and oxygen as source materials. High quality ZnO (0001) substrate was synthesized by the hydrothermal technique. The atomically flat surface without scratches was obtained by high temperature annealing at 800°C–1300°C in oxygen atmosphere. Ar + ion etching for the surface of ZnO substrates was critically important to the growth of ZnO films with good crystallinity. The epitaxial film and the ZnO substrate were characterized using reflection high-energy electron diffraction, atomic force microscope, and X-ray photoelectron spectroscopy.

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Leakage Currents through Thin Silicon Oxide Grown on Atomically Flat Silicon Surfaces

MRS Proceedings ◽

10.1557/proc-849-kk7.11 ◽

2004 ◽

Vol 849 ◽

Author(s):

Valerian Ignatescu ◽

Jack M. Blakely

Keyword(s):

High Temperature ◽

Leakage Current ◽

Silicon Oxide ◽

Silicon Surfaces ◽

High Temperature Annealing ◽

Chemical Cleaning ◽

Flat Surfaces ◽

Stepped Surfaces ◽

Thin Silicon ◽

Atomically Flat

ABSTRACTAtomically flat surfaces can be obtained by high-temperature annealing in UHV of specially patterned silicon samples. Thin silicon oxide layers were grown by dry oxidation on three types of surfaces: (a) atomically flat surfaces, (b) normal (stepped) surfaces cleaned in UHV by the same high-temperature annealing and (c) normal wafer surfaces, which underwent just an RCA chemical cleaning before oxidation. Atomic force microscopy (AFM) was performed to reveal the topography of the surfaces. Aluminum pads were deposited on these oxidized surfaces using photolithography techniques. The leakage current through the oxide was measured for all three cases. Our results show that the smoother the surface before oxidation, the smaller the leakage current.

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Nanotribology of single crystal ZnO surfaces: Restructuring at high temperature annealing

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581891 ◽

1999 ◽

Vol 17 (4) ◽

pp. 1787-1792 ◽

Cited By ~ 8

Author(s):

J. J. Nainaparampil ◽

J. S. Zabinski ◽

S. V. Prasad

Keyword(s):

High Temperature ◽

Single Crystal ◽

High Temperature Annealing

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Effects of high temperature annealing on single crystal ZnO and ZnO devices

Journal of Applied Physics ◽

10.1063/1.3700186 ◽

2012 ◽

Vol 111 (8) ◽

pp. 084503 ◽

Cited By ~ 13

Author(s):

W. Mtangi ◽

F. D. Auret ◽

M. Diale ◽

W. E. Meyer ◽

A. Chawanda ◽

...

Keyword(s):

High Temperature ◽

Single Crystal ◽

High Temperature Annealing

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Precipitates Caused in Silicon Wafers by Prolonged High-Temperature Annealing in Nitrogen Atmosphere

MRS Proceedings ◽

10.1557/opl.2014.294 ◽

2014 ◽

Vol 1591 ◽

Author(s):

Haruo Nakazawa ◽

Masaaki Ogino ◽

Hideaki Teranishi ◽

Yoshikazu Takahashi ◽

Hitoshi Habuka

Keyword(s):

High Temperature ◽

Single Crystal ◽

Annealing Time ◽

Silicon Crystal ◽

Nitrogen Atmosphere ◽

Silicon Wafers ◽

High Temperature Annealing ◽

Floating Zone ◽

Cross Sectional ◽

X Ray

ABSTRACTThe precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.

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