A compact model of fringing field induced parasitic capacitance for deep sub-micrometer MOSFETs

2009 ◽  
Vol 53 (9) ◽  
pp. 1041-1045 ◽  
Author(s):  
Xi Liu ◽  
Xiaoshi Jin ◽  
Jong-Ho Lee
Keyword(s):  
Parasitic Capacitance ◽  
Compact Model ◽  
Fringing Field

scholarly journals Bandwidth Improvement of RMPA using DGS

2016 ◽  
Vol 4 (1) ◽  
pp. 30-32
Author(s):  
Sandeep Dwivedi ◽  
Shailendra Singh Ojha
Keyword(s):  
Ground Plane ◽  
Research Paper ◽  
Parasitic Capacitance ◽  
The Other ◽  
Operating Frequency ◽  
Fringing Field ◽  
Paper Author

In this research paper we proposed a new DGS design to improve the bandwidth of RMPA designed for 2.2GHz operating frequency. In this paper, author proposed a RMPA with DGS to enhance its parameters and mainly bandwidth and directivity of the antenna. To achieve a very important bandwidth and directivity enhancement author proposed a table shaped unsymmetrical DGS in the ground plane. This unsymmetrical DGS on the other side of the patch increases the fringing field which consequently increased the parasitic capacitance. This coupling of patch and ground made the bandwidth and directivity enhanced from the RMPA without DGS.

A full analytical model of fringing-field-induced parasitic capacitance for nano-scaled MOSFETs

2009 ◽  
Vol 25 (1) ◽  
pp. 015008 ◽  
Author(s):  
Xi Liu ◽  
Xiaoshi Jin ◽  
Jung-Hee Lee ◽  
Lei Zhu ◽  
Hyuck-In Kwon ◽  
...  
Keyword(s):  
Analytical Model ◽  
Parasitic Capacitance ◽  
Fringing Field

Exhaustive and Systematic Accuracy Verification and Enhancement of STI Stress Compact Model for General Realistic Layout Patterns

2010 ◽  
Vol E93-C (8) ◽  
pp. 1349-1358
Author(s):  
Kenta YAMADA ◽  
Toshiyuki SYO ◽  
Hisao YOSHIMURA ◽  
Masaru ITO ◽  
Tatsuya KUNIKIYO ◽  
...  
Keyword(s):  
Compact Model

Sky Segmentation for Enhanced Depth Reconstruction and Bokeh Rendering with Efficient Architectures

2020 ◽  
Vol 2020 (14) ◽  
pp. 378-1-378-7
Author(s):  
Tyler Nuanes ◽  
Matt Elsey ◽  
Radek Grzeszczuk ◽  
John Paul Shen
Keyword(s):  
Real Time ◽  
Mobile Device ◽  
Computational Cost ◽  
False Positives ◽  
Compact Model ◽  
High Quality ◽  
False Negatives ◽  
Trade Off ◽  
Depth Reconstruction ◽  
Binary Classifiers

We present a high-quality sky segmentation model for depth refinement and investigate residual architecture performance to inform optimally shrinking the network. We describe a model that runs in near real-time on mobile device, present a new, highquality dataset, and detail a unique weighing to trade off false positives and false negatives in binary classifiers. We show how the optimizations improve bokeh rendering by correcting stereo depth misprediction in sky regions. We detail techniques used to preserve edges, reject false positives, and ensure generalization to the diversity of sky scenes. Finally, we present a compact model and compare performance of four popular residual architectures (ShuffleNet, MobileNetV2, Resnet-101, and Resnet-34-like) at constant computational cost.

ТИРИСТОРНЫЙ ЭФФЕКТ В СВЧ ИС, ИЗГОТОВЛЕННЫХ ПО SIGE БИКМОП-ТЕХНОЛОГИЯМ

2020 ◽  
Vol 96 (3s) ◽  
pp. 612-614
Author(s):  
В.В. Елесина ◽  
И.О. Метелкин
Keyword(s):  
Integrated Circuits ◽  
Extraction Procedure ◽  
Compact Model ◽  
Model Parameters ◽  
Cad Systems ◽  
Parameters Extraction ◽  
Sige Bicmos ◽  
Bicmos Integrated Circuits ◽  
Basic Parameters ◽  
Radiation Induced

Проведен анализ случаев возникновения тиристорного эффекта в СВЧ ИС, изготовленных по технологии SiGe БиКМОП, при воздействии ионизирующего излучения. Рассмотрены области СВЧ ИС, чувствительные к возникновению ТЭ, определены основные параметры тиристорных структур. Проведена апробация подхода к восстановлению параметров схемно-топологической радиационно-ориентированной модели тиристорной структуры для САПР. The paper analyzes ionizing radiation induced latchup in microwave SiGe BiCMOS integrated circuits (ICs). Critical parts of ICs sensitive to latchup have been identified and basic parameters of corresponding parasitic thyristor structures have been determined. An approach has been approved to the thyristor structure compact model parameters extraction procedure intended for use in CAD systems.

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