Direct observation of redox state modulation at carbon/amorphous tantalum oxide thin film hetero-interface probed by means of in situ hard X-ray photoemission spectroscopy

2013 ◽  
Vol 253 ◽  
pp. 110-118 ◽  
Author(s):  
Takashi Tsuchiya ◽  
Shogo Miyoshi ◽  
Yoshiyuki Yamashita ◽  
Hideki Yoshikawa ◽  
Kazuya Terabe ◽  
...  
2016 ◽  
Vol 120 (20) ◽  
pp. 205305 ◽  
Author(s):  
Geonhwa Kim ◽  
Joonseok Yoon ◽  
Hyukjun Yang ◽  
Hojoon Lim ◽  
Hyungcheol Lee ◽  
...  

2014 ◽  
Vol 55 (10) ◽  
pp. 1553-1556 ◽  
Author(s):  
Takashi Tsuchiya ◽  
Kaita Ito ◽  
Shogo Miyoshi ◽  
Manabu Enoki ◽  
Shu Yamaguchi

2019 ◽  
Vol 179 ◽  
pp. 424-433 ◽  
Author(s):  
Tanguy Lacondemine ◽  
Julien Réthoré ◽  
Éric Maire ◽  
Fabrice Célarié ◽  
Patrick Houizot ◽  
...  

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Ahmad Al-Sarraj ◽  
Khaled M. Saoud ◽  
Abdelaziz Elmel ◽  
Said Mansour ◽  
Yousef Haik

Abstract In this paper, we report oxidation time effect on highly porous silver oxide nanowires thin films fabricated using ultrasonic spray pyrolysis and oxygen plasma etching method. The NW’s morphological, electrical, and optical properties were investigated under different plasma etching periods and the number of deposition cycles. The increase of plasma etching and oxidation time increases the surface roughness of the Ag NWs until it fused to form a porous thin film of silver oxide. AgNWs based thin films were characterized using X-ray diffraction, scanning electron microscope, transmission electron microscope, X-ray photoemission spectroscopy, and UV–Vis spectroscopy techniques. The obtained results indicate the formation of mixed mesoporous Ag2O and AgO NW thin films. The Ag2O phase of silver oxide appears after 300 s of oxidation under the same conditions, while the optical transparency of the thin film decreases as plasma etching time increases. The sheet resistance of the final film is influenced by the oxidation time and the plasma application periodicity. Graphic abstract


2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.


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