Pad flattening ratio, coefficient of friction and removal rate analysis during silicon dioxide chemical mechanical planarization

2010 ◽  
Vol 518 (8) ◽  
pp. 1994-2000 ◽  
Author(s):  
H. Lee ◽  
Y. Zhuang ◽  
M. Sugiyama ◽  
Y. Seike ◽  
M. Takaoka ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Coefficient Of Friction ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Rate Analysis ◽  
Flattening Ratio

scholarly journals Role of Slurry Additives on Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica Based Slurry

2021 ◽  
Author(s):  
Yue Li ◽  
chenwei wang ◽  
Jianwei Zhou ◽  
Yuanshen Cheng ◽  
晨 续 ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Colloidal Silica ◽  
Semiconductor Device ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Image Sensor ◽  
Wafer Surface ◽  
Silicon Dioxide Film ◽  
Dioxide Film

Abstract Chemical mechanical planarization (CMP) is a critical process for smoothing and polishing the surfaces of various material layers in semiconductor device fabrication. The applications of silicon dioxide films are shallow trench isolation, an inter-layer dielectric, and emerging technologies such as CMOS Image Sensor. In this study, the effect of various chemical additives on the removal rate of silicon dioxide film using colloidal silica abrasive during CMP was investigated. The polishing results show that the removal rate of silicon dioxide film first increased and then decreased with an increasing concentration of K+, pH, and abrasive size. The removal rate of silicon dioxide film increased linearly as the abrasive concentration increased. The influence mechanisms of various additives on the removal rate of silicon dioxide film were investigated by constructing simple models and scanning electron microscopy. Further, the stable performance of the slurry was achieved due to the COO- chains generated by poly(acrylamide) hydrolysis weaken the attraction between abrasives. High-quality wafer surfaces with low surface roughness were also thus achieved. The desirable and simple ingredient slurry investigated in this study can effectively enhance the planarization performance, for example, material removal rates and wafer surface roughness.

Study on CMP Slurry and Technique of Silicon Dioxide Dielectric for ULSI

2008 ◽  
Vol 373-374 ◽  
pp. 798-801 ◽  
Author(s):  
Bai Mei Tan ◽  
J.Y. Yuan ◽  
X.H. Niu ◽  
H.L. Shi ◽  
Yu Ling Liu ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Dielectric Material ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Silica Sol ◽  
Chemical Effect ◽  
Slurry Flow ◽  
Complexation Agent ◽  
Surface Performance

SiO2 is a kind of widely used dielectric material in ULSI and its chemical mechanical planarization (CMP) is one of the most difficult processes. In this paper, the CMP mechanism and the effect of abrasive on SiO2 dielectric were analyzed; the different factors of affecting the CMP were analyzed. A kind of organic alkali was chosen to act as the pH regulator and complexation agent to enhance the chemical effect. The silica sol was selected as abrasive to realize no contamination, low viscidity, proper hardness and easy to clean. The effect of different concentration of abrasive on the removal rate and surface performance were studied. Further more the influence of polishing slurry flow and surfactant on removal rate were analyzed. The final planarization was realized.

scholarly journals Effect of Conditioner Type and Downforce, and Pad Surface Micro-Texture on SiO2 Chemical Mechanical Planarization Performance

Micromachines ◽  
2019 ◽  
Vol 10 (4) ◽  
pp. 258 ◽  
Author(s):  
Jeffrey McAllister ◽  
Calliandra Stuffle ◽  
Yasa Sampurno ◽  
Dale Hetherington ◽  
Jon Sierra Suarez ◽  
...  
Keyword(s):  
Coefficient Of Friction ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Polishing Process ◽  
Wafer Polishing ◽  
The Coefficient Of Friction

Based on a previous work where we investigated the effect of conditioner type and downforce on the evolution of pad surface micro-texture during break-in, we have chosen certain break-in conditions to carry out subsequent blanket SiO2 wafer polishing studies. Two different conditioner discs were used in conjunction with up to two different conditioning downforces. For each disc-downforce combination, mini-marathons were run using SiO2 wafers. Prior to polishing, each pad was broken-in for 30 min with one of the conditioner-downforce combinations. The goal of this study was to polish wafers after this break-in to see how the polishing process behaved immediately after break-in. One of the discs used in this study produced similar micro-texture results at both downforces, which echoed the results seen in the mini-marathon. When comparing the different polishing results obtained from breaking-in the pad with the different discs used in this study, the coefficient of friction (COF) and SiO2 removal rate (RR) were uncorrelated in all cases. However, the use of different discs resulted in different COF and RR trends. The uncorrelated COF and RR, as well as the differing trends, were explained by pad micro-texture results (i.e. the differing amount of fractured, poorly supported pad asperity summits).

scholarly journals Novel Abrasive-Impregnated Pads and Diamond Plates for the Grinding and Lapping of Single-Crystal Silicon Carbide Wafers

2021 ◽  
Vol 11 (4) ◽  
pp. 1783
Author(s):  
Ming-Yi Tsai ◽  
Kun-Ying Li ◽  
Sun-Yu Ji
Keyword(s):  
Silicon Carbide ◽  
Wear Rate ◽  
Single Crystal ◽  
Traditional Method ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Grit ◽  
Ceramic Binder

In this study, special ceramic grinding plates impregnated with diamond grit and other abrasives, as well as self-made lapping plates, were used to prepare the surface of single-crystal silicon carbide (SiC) wafers. This novel approach enhanced the process and reduced the final chemical mechanical planarization (CMP) polishing time. Two different grinding plates with pads impregnated with mixed abrasives were prepared: one with self-modified diamond + SiC and a ceramic binder and one with self-modified diamond + SiO2 + Al2O3 + SiC and a ceramic binder. The surface properties and removal rate of the SiC substrate were investigated and a comparison with the traditional method was conducted. The experimental results showed that the material removal rate (MRR) was higher for the SiC substrate with the mixed abrasive lapping plate than for the traditional method. The grinding wear rate could be reduced by 31.6%. The surface roughness of the samples polished using the diamond-impregnated lapping plate was markedly better than that of the samples polished using the copper plate. However, while the surface finish was better and the grinding efficiency was high, the wear rate of the mixed abrasive-impregnated polishing plates was high. This was a clear indication that this novel method was effective and could be used for SiC grinding and lapping.

Effects of Alkaline Nano-SiO2 Abrasive on Planarization of 300mm Copper Patterned Wafer

2013 ◽  
Vol 634-638 ◽  
pp. 2949-2954
Author(s):  
Xin Liang Tang ◽  
Yu Ling Liu ◽  
Hong Yuan Zhang ◽  
Jie Bao
Keyword(s):  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Initial Step ◽  
Step Height ◽  
Copper Removal ◽  
Copper Wafers

Silica abrasive plays an important role in chemical mechanical planarization (CMP) of copper. In this paper, effect of different silica abrasive concentrations on copper removal rate and planarization performance of copper was investigated. The results show that the copper removal rate was increased as the concentration of silica abrasive increase. However, excessive abrasive will lead to a decreased copper removal rate. The initial step height values of the multilayer copper wafers were all about 2500Å, and after being polished for 30s, the remaining values of step height of slurry A, B, C and D were 717 Å, 906 Å, 1222 Å and 1493 Å. It indicates that alkaline copper slurries with different abrasive concentrations all had a good planarization performance on copper patterned wafer CMP. As the abrasive concentration increased, the planarization capability was enhanced.

Effects of Additives in KOH Based Electrolytes on Cu ECMP

2007 ◽  
Vol 991 ◽  
Author(s):  
Tae-Young Kwon ◽  
In-Kwon Kim ◽  
Jin-Goo Park
Keyword(s):  
Citric Acid ◽  
Applied Voltage ◽  
Counter Electrode ◽  
Corrosion Potential ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Corrosion Current ◽  
Dynamic State ◽  
Static State ◽  
Potentiodynamic Curves

ABSTRACTThe purpose of this study was to characterize KOH based electrolytes and effects of additives on electro-chemical mechanical planarization. The electrochemical mechanical polisher was made to measure the potentiodynamic curve and removal rate of Cu. The potentiodynamic curves were measured in static and dynamic states in investigated electrolytes using a potentiostat. Cu disk of 2 inch was used as a working electrode and Pt electroplated platen was used as a counter electrode. KOH was used as the electrolyte. H2O2 and citric acid were used as additives for the ECMP of Cu. In static and dynamic potentiodynamic measurements, the corrosion potential decreased and corrosion current increased as a function of KOH concentration. In dynamic state, different potentiodynamic curve was obtained when compared to the static state. The current density did not decrease in passivation region by mechanical polishing effect. The static etch and removal rate were measured as function of KOH concentration and applied voltage. In ECMP system, polishing was performed at 30 rpm and 1 psi. The removal rate was about 60 nm/min at 0.3 V when 5 wt% KOH was used. Also, the effect of additive was investigated in KOH based electrolyte on removal rates. As a result, The removal rate was increased to 350 nm/min when 5wt% KOH, 5vol% H2O2, 0.3 M citric acid were used.

Planarization of Copper Damascene Interconnects by Spin-Etch Process: A Chemical Approach

2000 ◽  
Vol 612 ◽  
Author(s):  
Shyama P. Mukherjee ◽  
Joseph A. Levert ◽  
Donald S. Debear
Keyword(s):  
Fluid Flow ◽  
Process Parameters ◽  
Removal Rate ◽  
Normal Load ◽  
Chemical Mechanical Planarization ◽  
Copper Interconnects ◽  
Primary Process ◽  
Technical Parameters ◽  
Controllable Process ◽  
Damascene Interconnects

ABSTRACTThe present work describes the process principles of “Spin-Etch Planarization” (SEP), an emerging method of planarization of dual damascene copper interconnects. The process involves a uniform removal of copper and the planarization of surface topography of copper interconnects by dispensing abrasive free etchants to a rotating wafer. The primary process parameters comprise of (a) Physics and chemistry of etchants, and (b) Nature of fluid flow on a spinning wafer. It is evident, that unlike conventional chemical-mechanical planarization, which has a large number of variables due to the presence of pads, normal load, and abrasives, SEP has a smaller number of process parameters and most of them are primary in nature. Based on our preliminary works, we have presented the basic technical parameters that contribute to the process and satisfy the basic requirements of planarization such as (a) Uniformity of removal (b) Removal rate (c) Degree of Planarization (d) Selectivity. The anticipated advantages and some inherent limitations are discussed in the context of process principles. We believe that when fully developed, SEP will be a simple, predictable and controllable process.

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