Impact of a-Si:H hydrogen depth profiles on passivation properties in a-Si:H/c-Si heterojunctions

2012 ◽  
Vol 520 (13) ◽  
pp. 4439-4444 ◽  
Author(s):  
T.F. Schulze ◽  
L. Korte ◽  
B. Rech
Keyword(s):  
Depth Profiles

Preparation of Backthinned Ceramic Specimens

1985 ◽  
Vol 43 ◽  
pp. 182-183
Author(s):  
A. T. Fisher ◽  
P. Angelini
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Vacuum System ◽  
Back Surface ◽  
Surface Microstructure ◽  
Ion Milling ◽  
Near Surface ◽  
Depth Profiles ◽  
Analytical Electron ◽  
Ion Implanted

Analytical electron microscopy (AEM) of the near surface microstructure of ion implanted ceramics can provide much information about these materials. Backthinning of specimens results in relatively large thin areas for analysis of precipitates, voids, dislocations, depth profiles of implanted species and other features. One of the most critical stages in the backthinning process is the ion milling procedure. Material sputtered during ion milling can redeposit on the back surface thereby contaminating the specimen with impurities such as Fe, Cr, Ni, Mo, Si, etc. These impurities may originate from the specimen, specimen platform and clamping plates, vacuum system, and other components. The contamination may take the form of discrete particles or continuous films [Fig. 1] and compromises many of the compositional and microstructural analyses. A method is being developed to protect the implanted surface by coating it with NaCl prior to backthinning. Impurities which deposit on the continuous NaCl film during ion milling are removed by immersing the specimen in water and floating the contaminants from the specimen as the salt dissolves.

scholarly journals Nanoindentation Hardness and Practical Scratch Resistance in Mechanically Tunable Anti-Reflection Coatings

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 213
Author(s):  
James J. Price ◽  
Tingge Xu ◽  
Binwei Zhang ◽  
Lin Lin ◽  
Karl W. Koch ◽  
...  
Keyword(s):  
High Hardness ◽  
Scratch Resistance ◽  
Test Methods ◽  
Consumer Electronics ◽  
Minimal Impact ◽  
Depth Profiles ◽  
Nanoindentation Hardness ◽  
Coating Durability ◽  
Design Freedom ◽  
Ar Coating

This work presents fundamental understanding of the correlation between nanoindentation hardness and practical scratch resistance for mechanically tunable anti-reflective (AR) hardcoatings. These coatings exhibit a unique design freedom, allowing quasi-continuous variation in the thickness of a central hardcoat layer in the multilayer design, with minimal impact on anti-reflective optical performance. This allows detailed study of anti-reflection coating durability based on variations in hardness vs. depth profiles, without the durability results being confounded by variations in optics. Finite element modeling is shown to be a useful tool for the design and analysis of hardness vs. depth profiles in these multilayer films. Using samples fabricated by reactive sputtering, nanoindentation hardness depth profiles were correlated with practical scratch resistance using three different scratch and abrasion test methods, simulating real world scratch events. Scratch depths from these experiments are shown to correlate to scratches observed in the field from consumer electronics devices with chemically strengthened glass covers. For high practical scratch resistance, coating designs with hardness >15 GPa maintained over depths of 200–800 nm were found to be particularly excellent, which is a substantially greater depth of high hardness than can be achieved using previously common AR coating designs.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

scholarly journals The effect of the graded bilayer design on the strain depth profiles and microstructure of Cu/W nano-multilayers

2021 ◽  
pp. 110002
Author(s):  
A.V. Druzhinin ◽  
G. Lorenzin ◽  
D. Ariosa ◽  
S. Siol ◽  
B.B. Straumal ◽  
...  
Keyword(s):  
Depth Profiles

Nano-scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation

2021 ◽  
pp. 1-1
Author(s):  
Hung-Yuan Chang ◽  
Yew-Chung Sermon Wu ◽  
Chia-He Chang ◽  
Kun-Lin Lin ◽  
Abhijeet Joshi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shallow Junction ◽  
Depth Profiles ◽  
Nano Scale ◽  
Doped Silicon ◽  
Phosphorus Doped

Depth profiles of cutlery steel by SIMS

Vacuum ◽  
1986 ◽  
Vol 36 (11-12) ◽  
pp. 1020
Keyword(s):  
Depth Profiles

Pattern Writing by Implantation in a Large-Scale PSII System With Planar Inductively Coupled Plasma Source

2000 ◽  
Vol 624 ◽  
Author(s):  
Lingling Wu ◽  
Hongjun Gao ◽  
Dennis M. Manos
Keyword(s):  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Lateral Diffusion ◽  
Plasma Source ◽  
Direct Writing ◽  
Large Area ◽  
Depth Profiles ◽  
Geometric Patterns ◽  
Planar Coil ◽  
Rf Antenna

ABSTRACTA large-scale plasma source immersion ion implantation (PSII) system with planar coil RFI plasma source has been used to study an inkless, deposition-free, mask-based surface conversion patterning as an alternative to direct writing techniques on large-area substrates by implantation. The apparatus has a 0.61 m ID and 0.51 m tall chamber, with a base pressure in the 10−8 Torr range, making it one of the largest PSII presently available. The system uses a 0.43 m ID planar rf antenna to produce dense plasma capable of large-area, uniform materials treatment. Metallic and semiconductor samples have been implanted through masks to produce small geometric patterns of interest for device manufacturing. Si gratings were also implanted to study application to smaller features. Samples are characterized by AES, TEM and variable-angle spectroscopic ellipsometry. Composition depth profiles obtained by AES and VASE are compared. Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects. The paper also presents the results of MAGIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the magnitude of flux as a function of 3-D location on objects in the expanding sheath

Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
Debra L. Kaiser ◽  
Piotr Becla
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Infrared Detector ◽  
Vapor Phase Epitaxy ◽  
Diffusion Method ◽  
Depth Profiles ◽  
Growth Properties ◽  
Concentration Depth Profiles

ABSTRACTClose-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.

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